• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.407-407
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• 2010

본 논문에서는 확장된 히든마코브모델을 이용하여 플라즈마 식각공정에서 식각종료검출을 위한 방법을 연구하였다. 플라즈마 식각장비는 유도성 결합플라즈마 시스템을 사용하였으며, 종료점 검출을 위해 식각공정이 진행됨에 따른 플라즈마의 상태를 확인할 수 있는 광학 방사 분광기(Optical Emission Spectroscopy: OES)를 사용하였다. 식각이 진행되는 동안 여기되는 입자들은 특정한 재료에 해당하는 파장에서 빛을 방출한다. 플라즈마상태에서 여기되는 원자와 분자들에 의해서 방출되는 빛은 OES를 통해 식각되는 물질을 확인하기 위해서 특별한 파장의 빛을 선택하여 분석한다. 본 논문에서는 확장된 히든마코브모델을 이용해 산화물이 식각될 때 방출하는 고유한 파장의 빛을 분석하여 식각이 종료되는 시점을 찾는 연구를 하였다. 제안된 확장형 히든마코브 모델은 세미-마코브모델과 분절특징 히든마코브모델을 결합한 것으로, 확률적 통계기법을 통해 종료시점을 찾아내는 방법이다. OES를 통해 얻은 데이터는 식각 종료가 일어나기 전의 파장의 상태와 식각이 종료된 후의 파장의 상태로 구분되어지는데, 식각종료시점에서 파장의 상태가 변화하며 이를 감지하여 식각종료점을 검출한다. 분절특징 히든마코브모델을 이용하여 식각종료시점 전후의 파장의 상태를 모델링 하였으며, 일반적인 마코브 모델의 특정상태가 유지될 시간의 확률을 변형된 세미-마코브 모델을 이용하여 OES를 통해 얻은 데이터 내에서 식각 종료가 일어나기 전의 상태가 유지될 수 있는 확률을 모델링 하였다. 실험을 통해 얻어진 6개의 데이터중 4개를 학습을 위해 사용하여 모델링을 하였고 나머지 2개의 데이터를 검증을 위해 사용한 결과, 확장형 히든마코브모델의 식각종료시점검출에 있어 뛰어난 정확성과 우수성을 증명하였다.

• Journal of Technologic Dentistry
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• v.43 no.4
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• pp.145-152
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• 2021

Purpose: This study aimed to produce resin prosthetics using a dental barrel finishing machine. For dental resin grinding, the ingredients of the barrel finishing media were analyzed, and surface residues of the resin were observed. Methods: Two types of barrel finishing media for dental resin grinding were tested. Specimens were made from thermal polymerized, auto polymerized, and photopolymerized resins. Finishing media were analyzed through energy-dispersive X-ray spectroscopy (EDS) component analysis and inductively coupled plasma-optical emission spectrometry (ICP-OES) component analysis. Then, the prepared specimen was barrel finished for 25 minutes using two types of barrel finishing media, and scanning electron microscope was photographed to observe the surface residues. Results: As a result of EDS component analysis, both types of finishing media were analyzed for the components of C, O, Zr and Al elements, and industry media (IM) was further analyzed for the components of Si and Mg elements. In the ICP-OES component analysis, Cd and As, which are harmful elements, were detected in IM, and no harmful elements were detected in manufacturing media (MM). Because of observation of surface residues, no residues were observed in the three types of resin specimens that were barrel finished with two types of finishing media. Conclusion: Surface residue wasn't observed on the specimens polished using two types of finishing media. However, in IM, Cd and As, which are harmful elements, were detected, making it inappropriate for clinical use. In MM, harmful elements were not detected; therefore, clinical use will be possible.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.93-98
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• 2023

As semiconductor devices become highly integrated and process difficulty increases, the need for highly sensitive sensors that can detect micro leaks is increasing. However, the noise contained in the CCD sensor itself acts as an obstacle to detecting fine leaks. In this study, integration time was changed for each condition, the sensor was cooled to 0℃, and the dark voltage level was measured to confirm through experiment the characteristics of the temporal noise included in the CCD sensor, a component of OES (Optical Emission Spectroscopy). When integration time was reduced from 30msec to 10msec, the dark voltage level decreased by about 20.5 % from an average of 151.5mV to 120.5mV. In the case of cooling device, Peltier elements were selected because of their simple structure and small size. During temperature cooling, the target temperature was controlled to within ±0.5℃ through PID control. When cooled from 20℃ to 0℃ using this cooling device, it was confirmed that the dark voltage level decreased by about 7% from an average of 147.0mV to 137.0mV.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2012.05a
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• pp.545-550
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• 2012

High Energy density metal powder has high melting point of oxide film. By this, the ignition source that can make a thermal effect of high-temperature during short time is needed to overcome ignition disturbance mechanism by oxide film. So effective ignition does not occurred with hydrocarbon ignitor, $H_2-O_2$ ignitor, high power laser. But steam plasma can be generate about 5000 K temperature field in short order. Because a steam plasma uses steam as the working gas, it is environmental-friendly and economical. Therefore in this study, we analyze steam plasma temperature field and radical species with optical emission spectroscopy method in order to apply steam plasma ignitor to metal combustion system and cloud particle ignition was identified in visual.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.74-84
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• 2022

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.57-57
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• 2009

In this work, we carried out the variation of surface characteristics of organic polymer films by O2 plasma. The plasma diagnostics were performed by DLP(Double Langmuir Probe) and OES(Optical Emission Spectroscopy) measurements. Moreover, variation of surface characteristics were measured by AFM(Atomic Force Microscope), XPS(X-ray Photoelectron Spectroscopy), and contact angle goniometer. It was found that the etch rate of organic films was controlled by O radicals flux and dc bias voltage. And O radical density and dc bias voltage increased with increasing bias power. So, it was changed surface energy as a function of surface roughness and O/C ratio in organic films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.