Abnormal Detection in 3D-NAND Dielectrics Deposition Equipment Using Photo Diagnostic Sensor

  • Kang, Dae Won (Department of Industrial and Management Engineering, Myongji University) ;
  • Baek, Jae Keun (Department of Industrial and Management Engineering, Myongji University) ;
  • Hong, Sang Jeen (Department of Electronics Engineering, Myongji University)
  • Received : 2022.06.07
  • Accepted : 2022.06.23
  • Published : 2022.06.30

Abstract

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

Keywords

Acknowledgement

This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE). (P0008458, The Competency Development Program for Industry Specialist.)

References

  1. Jo, K., and Hong, S., "Improved Self Plasma-Optical Emission Spectroscopy for In-situ Plasma Process Monitoring", Journal of the Semicon-ductor Technology, Vol. 16, No. 2, pp. 75-78, 2017.
  2. J. Jang, H.-S. Kim, W. Cho, H. Cho, J. Kim, S. I. Shim, Y. Jang, J.-H. Jeong, B.-K. Son, D. W. Kim, Kihyun, J.-J. Shim, J. S. Lim, K.-H. Kim, S. Y. Yi, J.-Y. Lim, D. Chung, H.-C. Moon, S. Hwang, J.-W. Lee, Y.-H. Son, U.-I. Chung and W.-S. Lee, "Vertical Cell Array using TCAT (Terabit Cell Array Transistor) Technology for Ultra High Density NAND Flash Memory", in IEEE VLSI Technol. Symp., Kyoto, Japan, pp. 192-193, Jun., 2009.
  3. F. F. Chen and J. P. Chang, Lecture Notes on Principles of Plasma Processing, Kluwer Academic: New York, 2003.
  4. I. Jolliffe, Principal Component Analysis, New York: Springer-Verlag, 2002.
  5. S. Kim and H. Yi, "Process Monitoring Device and Semiconductor Processing Apparatus including the Same", U.S. Patent 02222058 A1, 2011.
  6. J . S. Park, M. S. Thesis, Myongji University, Korea, 2008.
  7. G. S. Selwyn, AVS monograph series: Optical diagnostic Techniques for Plasma Processing, Ed. Woody Weed, AVS Press, New Work, 1993.
  8. J. W. Coburn and M. Chen, "Optical Emission Spectroscopy of Reactive Plasmas: A Method for Correlating Emission Intensities to Reactive Particle Density", J. Appl. Phys., Vol. 51, No. 2, pp. 3134-3136, 1980. https://doi.org/10.1063/1.328060
  9. J. Baliga, "Advanced Process Control: Soon to be a Must", Semiconductor International, Vol. 22, No. 2, pp. 76-88, 1998.
  10. S. W. Butler, "Process Control in Semiconductor Manufacturing", J. Vac. Sci. Technol., Vol. 13, No. 4, pp. 1917-1923, 1995. https://doi.org/10.1116/1.579680
  11. J.-H. Park, J.-H. Cho, J.-S. Yoon, and J.-H. Song, "Machine learning prediction of electron density and temperature from optical emission spectroscopy in nitrogen plasma", Coatings, Vol. 11, No. 10, pp. 1221-1223, 2021. https://doi.org/10.3390/coatings11101221
  12. J. V. Ringwood, S. Lynn, G. Bacelli, B. Ma, E. Ragnoli and S. McLoone, "Estimation and Control in Semiconductor Ethc: Practice and Possibilities", IEEE Trans. on Semi. Manufac., Vol. 23, No. 1, pp.87-98, 2010. https://doi.org/10.1109/TSM.2009.2039250
  13. M. Nisha, K. J. Saji, R. S. Aijmaha, N. V. Joshy and M. K. Jayaraj, "Characterization of Radio Frequency Plasma using Langmuir Probe and Optical Emission Spectroscopy", J. Appl. Phys., Vol. 99, No. 3, pp. 033304-033307, 2006. https://doi.org/10.1063/1.2171777
  14. S. -K. S. Fan, C. -Y. Hsu, D. -M. Tsai, F. He and C. -C. Cheng, "Data-Driven Approach for Fault Detection and Diagnostic in Semiconductor Manufacturing", IEEE Trans. Auto. Sci. and Eng., Vol. 17, No. 4, pp. 1925-1936, 2020. https://doi.org/10.1109/tase.2020.2983061
  15. Y. Park, J. Lee, S. S. Cho, G. Jin, and E. Jung, "Scaling and Reliability of NAND Flash Devices", in Proc. IEEE Int. Reliab. Symp., Waikoloa, Hi, pp. 2E.1.1-2E.1.4, Jun. 2014.
  16. Y. Kim, J.-G. Yun, S. H. Park, W. Kim, J. Y. Seo, M. Kang, K.-C. Ryoo, J.-H. Oh, J.-H. Lee, H. Shin, and B.-G. Park, "Three-Dimensional NAND Flash Architecture Design Based on Single-Crystalline Stacked Array", IEEE Trans. Electron. Dev., Vol.59, No.1, pp. 35-45, 2012. https://doi.org/10.1109/TED.2011.2170841
  17. W. Kim, S. Choi, J. Sung, T. Lee, C. Park, H. Ko, J. Jung, I. Yoo, and Y. Park, "Multi-Layered Vertical Gate NAND Flash Overcoming Stacking Limit for Terabit Density Storage", in IEEE VLSI Technol. Symp. Dig., Honolulu, HI, pp. 188-189, Jun. 2009.
  18. D. C. Brock and G. E. Moore, Understanding Moore's Law, Atlasbooks Dist, San Francisco, 2006.
  19. H. Rostami, J. Blue, C. Yugma, "Automatic equipment fault fingerprint extraction for the fault diagnostic on the batch process data", Applied Soft Computing, Vol. 68, pp.972-989, 2018. https://doi.org/10.1016/j.asoc.2017.10.029
  20. B. W. Silverman, "Smoothed Functional Principal Component Analysis by Choice of Norm", Annals of Statistics, Vol. 24, No. 1, 1-24, 1996. https://doi.org/10.1214/aos/1033066196
  21. E. P. van de Ven, I. -W. Connick, and A. S. Harrus, "Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films", in Proc. Int. IEEE VLSI Multilevel Interconnection Conf., Santa Clara, CA, pp. 194-201, 1990.
  22. Tobias, ReiterXaver, KlemenschitsLado Filipovic "Impact of plasma induced damage on the fabrication of 3D NAND flash memory", Solid-State Electronics 192(2022).
  23. QiangXu, Jingwen Hou, Mingkai Bai1, Zhiguo Zhao, LeiJin, Zongliang Huo and Chunlong Li, "Pre-metal dielectric PE TEOS oxide pitting in 3D NAND: mechanism and solutions", Semiconductor Science and Technology, Volume 37, 2022 Semicond. Sci. Technol. 37, 025007. https://doi.org/10.1088/1361-6641/ac419e
  24. Yangyao Dinga, Yichi Zhanga, Ho Yeon Chunga, Panagiotis D. Christofides, "Machine learning-based modeling and operation of plasma-enhanced atomic layer deposition of hafnium oxide thin films", Computers & Chemical Engineering Volume 144, 4 January 2021, 107148. https://doi.org/10.1016/j.compchemeng.2020.107148