• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.224-229
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• 2013

Vanadium oxide thin films were deposited on $c-Al_2O_3$ (001) substrate by in-situ RF magnetron sputtering. Oxygen partial pressure was adjusted to prepare thermochromic $VO_2$ phase. X-ray diffraction patterns and scanning electron microscopy convincingly showed that plate-like $V_2O_5$ grains were changed into round-shape $VO_2$ grains as oxygen partial pressure decreased. After the optimized deposition conditions were fixed, the effect of substrate temperature and orientation on the optical properties of $VO_2$ thin films was analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.393-394
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.398-399
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• 2006

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light. in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.36-41
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• 2000

$SnO-2$ thin films for thin film secondary battery anode were deposited n glass substrate with stain-less steel collector and charge/discharge experiments were conducted to investigate feasibility of $SnO-2$ thin film as a new anode material. The as-deposited films were pure $SnO-2$ phase which is not related to deposition condition. The grain size on the surface of as-deposited films increased with increase of oxygen partial pressure. However, the grain size did not show any change above oxygen partial pressure of 80:20. The surface roughness of the as-deposited films increased after decreasing because of resputtering effect of oxygen negative ion in plasma. All films showed typical $SnO-2$ anode characteristics which has a side effect at the first cycle, which is not related to the deposition condition. The charge/discharge experiments of 200cycles indicated that capacity of $SnO-2$ films depended on oxygen contents and surface roughness. The cycle characteristics was determined by initial charge/discharge reaction. The $SnO-2$ film with low initial capacity showed more stable cycle characteristics than film with high initial capacity.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.139-144
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• 2004

Recently, the importance of clean vacuum and partial pressure measurement of gas species has been increased in the vaccum process. In this study, the partial pressures of $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$(CO), Ar, $CO_2$ were measured by residual gas analyzer according to temperature of cryogenic pump which is used to clean vacuum generation and compared. The experimental results showed that the cryopanel temperature was reached to 12K after 72 minutes of pumping and after 25hours, the partial pressures in percent were 24.9 %, 6.6%, 5.5 %, 2.2 %, 3.8%, 30.7%, 6.5%, 6.1 %, 5.5%, 8.2% for $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$, Ar, $CO_2$ respectively. The dominant gases were $H_2$ and $H_2O $, and the partial pressures were relatively high compare to other gases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.38 no.2
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• pp.106-111
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• 2005

We studied the cardio-respiratory properties in the Japanese amberjack (Seriola quinqueradiata) during acute hypoxia exposure. Fish were exposed to three levels of hypoxia (80, 60 or 50 mmHg) for 60 min at $25^{\circ}C$. Cardiovascular parameters (cardiac output; Q, heart rate; HR, stroke volume; SV, blood pressure; $P_{DA}$) changed little from pre-exposure values during both 80 and 60 mmHg of hypoxia. During 50 mmHg of hypoxia, the fish showed a bradycardia which significantly affected Q, whereas no change in SV. $P_{DA}$ increased transiently. Arterial oxygen partial pressure ($PaO_2$) immediately reduced along with a decrease of the water oxygen partial pressure ($P_WO_2$). Arterial $O_2$ content ($CaO_2$) decreased significantly only after 60 min of 50 mmHg of hypoxia. Arterial pH (pHa) and hematocrit value (Hct) did not change significantly. Comparing the effects of different levels of hypoxia, oxygen delivery to the tissues ($Q\;{\times}\;CaO_2$) should be maintained a constant over a broad range of $P_WO_2$, however, severely depressed below 50 mmHg of hypoxia.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.634-637
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• 1999

The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.435-440
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• 2013

Transparent and conducting thin films of Ta-doped $SnO_2$ were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of $SnO_2$ decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (${\rho}{\sim}1.1{\times}10^{-3}{\Omega}{\cdot}cm$) for 10 wt% Ta-doped $SnO_2$ film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped $SnO_2$ film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.