• 전기학회논문지
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• 제61권6호
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• pp.817-820
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• 2012

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1179-1180
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• 2006

Y-type barium ferrite ($Ba_2Me_2Fe_{12}O_{22};$ Me=Zn, Co, Cu) expected as an electromagnetic wave absorber were prepared by the glass-ceramic method. The glasses with composition of $0.1ZnO{\cdot}0.9(xB_2O_3{\cdot}yBaO{\cdot}(1-x-y)Fe_2O_3)$ were prepared. Single-phase powders of Y type barium ferrite were obtained with the composition $0.1ZnO{\cdot}0.9(0.2B_2O_3{\cdot}0.5BaO{\cdot}0.3Fe_2O_3)$. The shape of Y-type crystals depended strongly on the heating temperature and changed from a plate-like hexagon to a complex polyhedron with increasing heating temperature. Correlation was recognized between saturation magnetization and crystal shape. Electromagnetic wave absorption characteristics was affected by the saturation magnetization and crystal shape.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.53-54
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• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• 한국재료학회지
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• 제26권6호
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• 한국어류학회지
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• 제24권4호
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• pp.247-252
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• 2012

한국산 송사리속 2종에 대한 섭이기관의 구조적 차이를 알아보기 위하여 악골 및 이빨 구조를 조사하였다. 악골에서 송사리 Oryzias latipes는 전상악골 중앙부의 등 쪽 가장자리에 움푹 들어가는 홈이 존재하였으나 대륙송사리 O. sinensis는 일직선이었다. 후반부의 위치에서 송사리는 중앙부와 일직선상에 존재하였으나 대륙송사리는 배 쪽에 존재하였다. 또한 송사리는 하악골의 구상돌기 아래로 이어지는 치골 뒷가장자리에 움푹 들어가는 홈이 존재한 반면에 대륙 송사리에서는 뒷가장자리가 일직선 모양을 하였다. 송사리는 성적이형으로서 수컷에서만 나타나는 큰 이빨이 하악골의 측면 방향으로 발달하였고, 대륙송사리는 등 쪽 방향으로 발달하였다. 한편 송사리의 이빨형태는 원뿔모양과 화살촉모양 2 types이 나타난 반면에 대륙송사리에서는 원뿔 모양 1 type만 나타나는 특징을 보였다. 이상과 같이 한국에 분포하는 2종의 송사리는 섭이기관에서 뚜렷한 종간의 특징을 잘 보여 주었다.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Nuclear Engineering and Technology
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• 제30권2호
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• pp.128-139
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• 1998

The effect of UO$_2$ powder property and oxygen potential on characteristics of sintered UO$_2$-Gd$_2$O$_3$ fuel pellets has been investigated. Two types of powder, mixture of AUC-UO$_2$ and Gd$_2$O$_3$powders (type I) and mixture of ADU-UO$_2$ and Gd$_2$O$_3$powders (type II), have been prepared, pressed, and sintered at 168$0^{\circ}C$ for 4 hours. Four sintering atmospheres with different mixing ratios of $CO_2$to H$_2$ gas ranging from 0 to 0.3 have been used. UO$_2$-Gd$_2$O$_3$ fuel has lower sintered density than UO$_2$ fuel, and the density drop is larger for powder type I than for powder type II. As the oxygen potential increases, the sintered density of UO$_2$-2wt% Gd$_2$O$_3$pellets increases but that of UO$_2$-10wt% Gd$_2$O$_3$ pellets decreases. It is found that pores are newly formed in UO$_2$-10wt% Gd$_2$O$_3$ pellets in accordance with the decrease in density. The grain size of UO$_2$-Gd$_2$O$_3$ fuel increases and a short range G4 distribution becomes homogeneous as the oxygen potential increases. A long range ed distribution and grain structure are inhomogeneous for powder type II. The lattice parameter of (U,Gd)O$_2$solid solution decreases linearly with Gd$_2$O$_3$ content. The dependence of UO$_2$-Gd$_2$O$_3$fuel characteristics on powder type and sintering atmosphere have been discussed.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.641-644
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• 2009

We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.