• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• Transactions of the Society of Information Storage Systems
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• v.9 no.2
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• pp.42-47
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• 2013

In this study, we have experimentally analyzed how the surface properties of transparent electrode layer influence the photovoltaic performance of bulk heterojunction organic solar cell by the contact angle measurement and X-ray photoelectron spectroscopy(XPS) observation. As a result, the power conversion efficiency of test devices improved from 0.64% to 1.83% and 2.15% by UV-ozone exposure and $O_2$ plasma treatment, respectively. Thus, we conclude that the surface activation process is very important for better performance and stability in addition to the cleaning process of carbonate residue on the surface.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06b
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• pp.465-469
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• 2006

Pre-treatment methods to determine various heavy metal contents in packaging papers were investigated by ICP-ES (Inductively Coupled Plasma Emission Spectrometry) analysis. Pre-treatment methods utilized in this study include dry ashing and decomposition methods ($HNO_{3-}HClO_{4-}HF,\;HNO_{3},\;and\;H_{2}SO_{4-}HNO_{3}$). They were compared with the conventional extraction (water) and migration (3% acetic acid) methods. The five representative heavy metals (Cd, As, Pb, Cr and Hg) were analyzed. For Cd, Hg, and As, the results were below detection limit of the instrument. In case of Cr and Pb, the migration test is considered to be a better method compared to the extraction test, but all pretreated methods showed much higher detection efficiency than the extraction or migration test. However, the detection ratio between the migration test and decomposition methods was different. Among all decomposition methods, the nitric acid - perchloric acid - hydrofluoric acid treatment brought a slightly higher detection value than others, but there was no significant difference among them except sulfuric acid - nitric acid method. Concerning Pb, the sulfuric acid - nitric acid method showed a low detection efficiency compared to other decomposition methods. The sulfuric acid - nitric acid method is, thus, not considered to be a suitable analysis method for Pb in packaging papers.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.346-349
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• 1998

In order to reduce to the defect density in poly-Si/SiO$_2$ thin films, where poly-Si is either undoped or doped by BF$_2$ implantation, the poly-Si/SiO$_2$ samples have been hydrogenated by rf plasmas of low temperature. Before hydrogenation, both $P_b$ centers and E centers were observed in the poly-Si(undoped)/SiO$_2$ and in the poly-Si(doped)/SiO$_2$. After 30 min hydrogenation, the $P_b$ center was reduced by 80 % doped sample and by 76 % in the undoped sample and the E center was not observed. After 90min hydrogenation, however, increases of the $P_b$ centers and regenerations of the E center were observed in the undoped sample as well as in the doped one. Compared with the undoped sample, the increase of $P_b$ center in the doped one was more dominant.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.2
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• pp.33-37
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• 2014

We have developed a novel passivation process employing a sacrificial gallium oxide process in order to recover the surface damage in AlGaN/GaN HFETs. Even with a conventional prepassivation process, surface damage during high temperature ohmic annealing cannot be avoided completely. Therefore, it is necessary to recover the damaged surface to avoid the characteristic degradation. In this work, a sacrificial gallium oxide process has been proposed in which the damaged surface after ohmic annealing was oxidized by oxygen plasma treatment and thereafter etched back using HCl. As a result, the leakage current was dramatically reduced and thus the subthreshold slope was significantly improved. In addition, the maximum drain current level was increased from 594 to 634 mA/mm. To verify the effects, the surface conditions were carefully investigated using X-ray photoelectron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• ETRI Journal
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• v.16 no.1
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.451-451
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• 2010

최근들어 80인치 이상의 대경 고화질 display 및 휴대용 projection display 제작이 가능한 LCoS (Liquid Crystal on Silicon) display에 대한 관심이 높아지고 있다. LCoS projection display는 높은 개구율, 빠른 응답속도, 고화질, 대형 디스플레이 임에도 불구하고 낮은 제조단가 등의 여러 가지 장점을 가지고 있다. LCoS projection display의 핵심 기술로는 높은 투과도와 낮은 반사율을 갖는 유리기판, 무기 배향막 증착 기술, Si back plane과의 접합기술 등이 있다. 이 중 LCoS projection display 제작을 위한 첫 단계인 유리기판은 가시광선 영역에서 96% 이상의 높은 투과도와 3% 미만의 반사도를 요구하는 기술을 필요로 한다. 본 연구에서는 indium이 doping된 tin oxide (ITO)를 투명 전도성막으로 사용하고, $SiO_2/MgF_2$ 이중 박막을 반사방지막으로 채택하여 고투과도 및 저반사율을 갖는 유리기판 제조에 응용하였다. 먼저 15nm 두께의 ITO 박막을 DC sputtering을 이용하여 8-inch 크기의 corning1737 유리기판 상에 증착한 후, 그 반대편에 e-beam evaporation 장비를 사용하여 120nm 두께의 반사 방지막을 증착하였다. 또한 유리기판 상에 증착된 투명 전도성막의 표면개질을 위하여 Ar plasma를 이용하여 treatment를 수행하였다. 이 때 sputtering 조건은 DC power, Ar 유량 및 압력을 조절함으로서 높은 투과도를 갖는 최적의 조건을 구현하였고, e-beam evaporation을 이용한 반사방지막 증착 조건은 $SiO_2$와 $MgF_2$의 계면에서 빛의 반사를 최소화할 수 있는 최적의 조건을 구현하였다. 제작된 유리기판은 가시광선 영역에서 97% 이상의 투과도를 보였으며, 최대 2.8%의 반사율을 보여, LCoS display 제작에 적합함을 확인할 수 있었다. 또한 Ar plasma 처리 후 ITO 박막의 면저항 값은 $100\;{\omega}/{\Box}$, 표면 거칠기는 rms 값 기준 0.095nm, 접촉각 $20.8^{\circ}$의 특성을 보여, 타 index matched transparent conducting oxide가 coating된 유리기판에 비해 우수한 특성을 보였다.

• The Korea Journal of Herbology
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• v.22 no.4
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• pp.213-218
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• 2007

Objectives : Effects of Fructus Foeniculi extract on liver function were investigated in carbon tetrachloride(CCl4) intoxicated rats. Methods : Thirty two male Sprague-Dawley rats with mean weight of $227.28{\pm}7.92g$ were used in these experiments and housed with food and water ad libitum. Fructus Foeniculi extract was administerd at dose 100mg/kg/day and 200mg/kg/day p.o. for 2 weeks after that CCl4 was treated 3 times at dose of 2.5ml/kg, p.o. in alternate day basis. Then serum AFP(${\alpha}$-Fetoprotein), Total protein, Albumin, Triglyceride, Total cholesterol concentrations and ALP (Alkaline phosphatase), AST(Aspartate Aminotransferase), ALT(Alanine Aminotransferase), ${\gamma}$-GT( ${\gamma}$-Glutamyl transferase), LDH(Lactate Dehydrogenase) activities were determined with commercial kit by autoanalyzer. Results : Plasma ${\alpha}$-fetoprotein and total protein concentration showed a tendency to decrease in Fructus Foeniculi extract-treated groups. However, plasma albumin concentration showed no significant differences in all treatment groups. Activity of plasma aspartate aminotransferase and alanine aminotransferase in Fructus Foeniculi extract-treated groups showed a lower value than that of control group. Alkaline phosphatase and lactate dehydrogenase activities showed a tendency to decrease in Fructus Foeniculi treated groups. However, ${\gamma}$-glutamyl transferase activity showed no significant difference in all treated groups. Concentration of plasma triglyceride and total cholesterol showed a high level in CCl4 intoxicated rats but not in Fructus Foeniculi treated groups. Conclusion : Reviewing these experimental results, it appears that Fructus Foeniculi extract have recovering effect against liver injury.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.239-244
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• 2019

Two hydrogenation surface modifications, namely hydrogen atmosphere heat treatment and hydrogen plasma treatment, were found to lead to improved dispersion of nanodiamond (ND) seed particles and enhanced nucleation density for deposition of smooth ultrananocrystalline diamond (UNCD) film. After hydrogenation, the C-O and O-H surface functionalities on the surface of nanodiamond particles were converted to the C-H surface functionalities, and the Zeta potential was increased. As the degree of dispersion was improved, the size of nanodiamond aggregates decreased significantly and nucleation density increased dramatically. After hydrogen heat treatment at 600℃, average size of ND particles was greatly reduced from 3.5 ㎛ to 34.5 nm and a very high nucleation of ~3.9 × 10¹¹ nuclei/㎠ was obtained for the seeded Si surface.