• Title/Summary/Keyword: O-plasma treatment

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Inactivation of Mycobacteria by Radicals from Non-Thermal Plasma Jet

  • Lee, Chaebok;Subhadra, Bindu;Choi, Hei-Gwon;Suh, Hyun-Woo;Uhm, Han. S;Kim, Hwa-Jung
    • Journal of Microbiology and Biotechnology
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    • v.29 no.9
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    • pp.1401-1411
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    • 2019
  • Mycobacterial cell walls comprise thick and diverse lipids and glycolipids that act as a permeability barrier to antibiotics or other chemical agents. The use of OH radicals from a non-thermal plasma jet (NTPJ) for the inactivation of mycobacteria in aqueous solution was adopted as a novel approach. Addition of water vapor in a nitrogen plasma jet generated OH radicals, which converted to hydrogen peroxide ($H_2O_2$) that inactivated non-pathogenic Mycobacterium smegmatis and pathogenic Mycobacterium tuberculosis H37Rv. A stable plasma plume was obtained from a nitrogen plasma jet with 1.91 W of power, killing Escherichia coli and mycobacteria effectively, whereas addition of catalase decreased the effects of the former. Mycobacteria were more resistant than E. coli to NTPJ treatment. Plasma treatment enhanced intracellular ROS production and upregulation of genes related to ROS stress responses (thiolrelated oxidoreductases, such as SseA and DoxX, and ferric uptake regulator furA). Morphological changes of M. smegmatis and M. tuberculosis H37Rv were observed after 5 min treatment with $N_2+H_2O$ plasma, but not of pre-incubated sample with catalase. This finding indicates that the bactericidal efficacy of NTPJ is related to the toxicity of OH and $H_2O_2$ radicals in cells. Therefore, our study suggests that NTPJ treatment may effectively control pulmonary infections caused by M. tuberculosis and nontuberculous mycobacteria (NTM) such as M. avium or M. abscessus in water.

The Comparison of Property and Visible Light Activity between Bulk and Surface Doped N-TiO2 Prepared by Sol-gel and N2-plasma Treatment

  • Hu, Shaozheng;Li, Fayun;Fan, Zhiping
    • Bulletin of the Korean Chemical Society
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    • v.33 no.1
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    • pp.199-203
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    • 2012
  • A modified sol-gel method and $N_2$-plasma treatment were used to prepare bulk and surface doped N-$TiO_2$, respectively. XRD, TEM, UV-vis spectroscopy, $N_2$ adsorption, Elemental Analyzer, Photoluminescence, and XP spectra were used to characterize the prepared $TiO_2$ samples. The N doping did not change the phase composition and particle sizes of $TiO_2$ samples, but increased the visible light absorption. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activity of surface doped N-$TiO_2$ prepared by $N_2$-plasma was much higher than that of bulk doped N-$TiO_2$ prepared by sol-gel method. The possible mechanism for the photocatalysis was proposed.

Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.214-215
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    • 2007
  • Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

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Structural Properties of chemically deposited CdS Films on plasma treated PET (고밀도 산소 플라즈마 처리된 폴리머 기판에 성장시킨 CdS 박막의 특성 분석)

  • Song, Woo-Chang;Park, Seung-Beom;Lim, Dong-Gun;Lee, Jae-Hyeong;Park, Jong-Kuk;Park, Ha-Yong;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.228-228
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    • 2008
  • CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density $O_2$ plasma. CdS films are prepared by chemical bath deposition(CBD) method. In case of the PET substrate with plasma treatment for 2min, the crystalline orientation of CdS films exhibits a strong hexagonal(002). Grain size was increased from 300nm without $O_2$ plasma treatment to 380nm with an $O_2$ plasma treatment.

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Synchrotron radiation photoelectron spectroscopy study of oxygen doping effect by oxygen plasma treatment to inverted top emitting organic light emitting diodes

  • Hong, Ki-Hyon;Kim, Ki-Soo;Kim, Sung-Jun;Choi, Ho-Won;Tak, Yoon-Heung;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.118-120
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    • 2009
  • We reported that the evidence of oxygen doping to copper-phthalocyanine (CuPc) by $O_2$-plasma treatment to Au electrode of inverted top emitting organic light emitting diodes (ITOLEDs). The operation voltage of OLEDs at 150 mA/$cm^2$ decreased from 16.1 to 10.3 V as oxygen atoms indiffued to CuPc layer using $O_2$-plasma. Synchrotron radiation photoelectron spectroscopy results showed that a new bond of Cu-O appeared and the energy difference between the highest occupied molecular orbital and $E_F$ is lowered by 0.20 eV after plasma treatment. Thus the hole injection barrier was lowered, reducing the turn-on voltage and increasing the quantum efficiency of OLEDs.

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HIP Effects on Mechanical Properties of Oxide Plasma-sprayed Coatings

  • Korobova, N.;Soh, Dea-Wha
    • Journal of the Speleological Society of Korea
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    • no.76
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    • pp.61-66
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    • 2006
  • The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

Changes in Work Function after O-Plasma Treatment on Indium-Tin-Oxide (산소 플라즈마로 처리한 ITO(Indium-Tin-Oxide)에 대한 일함수 변화)

  • 김근영;오준석;최은하;조광섭;강승언;조재원
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.171-175
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    • 2002
  • The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

Characterization of AZO Thin Film by Plasma Surface Treatment (플라즈마 표면 처리에 따른 AZO 박막의 특성 변화)

  • Woo, Jong-Chang;Kim, Gwan-Ha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.147-150
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    • 2019
  • There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

The Improvement of the Off-Current Characteristics in the Short Channel a-Si:H TFTs

  • Bang, J.H.;Ahn, Y.K.;Ryu, W.S.;Kim, J.O.;Kang, Y.K.;Yang, J.Y.;Yang, M.S.;Kang, I.B.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.867-869
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    • 2008
  • We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.

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Improvement of Interface Adhesionin Ball Grid Array Packages by Plasma Treatment (플라즈마 처리에 의한 BGA 패키지의 계면 접착력 향상)

  • 김경섭;한완옥;장의구
    • Journal of Welding and Joining
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    • v.18 no.4
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    • pp.64-69
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    • 2000
  • Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

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