• 대한수학회지
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• 제37권6호
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• pp.901-913
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• 2000

This is a summary of results involving the development of a theory of an index of an isolated critical point for densely defined nonlinear operators of type (S(sub)+)(sub)0,L. This index theory is associated with a degree theory, for such operators, whch has been recently developed by the authors.

• 한국세라믹학회지
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• 제40권6호
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• pp.589-593
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• 2003

실리카 평판광회로는 다양한 광수동소자에 응용이 되고 있으며, 이를 구성하는 SiO$_2$와 GeO$_2$-SiO$_2$ 막은 화염가수분해증착에 의해 증착되었다. SiO$_2$ 막은 산-수소 토치에 SiCl$_4$, POC1$_3$와 BCl$_3$를 주입하여 화염가수반응에 의해 생성되었으며, POC1$_3$/BC1$_3$ 유량비가 증가함에 따라 P 농도는 2.0-2.8 at%까지 증가하였고, 굴절률은 1.4584-1.4605로 증가하였다. GeO$_2$-SiO$_2$ 막의 굴절률은 GeCl$_4$ 유량에 의해 제어되었으며 30-120 sccm으로 증가함에 따라 1.4615-1.4809로 증가하였다.

• 한국결정성장학회지
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• 제17권2호
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• pp.47-51
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• 2007

저굴절 재료인 F-doped SiOC : H 박막을 Si 웨이퍼와 유리기판위에 rf power, 기판온도, 그리고 가스유량($SiH_4,\;CF_4$ and $N_2O$)을 변수로 하여 PECVD법으로 증착하였다. 기판 온도와 rf power증가에 따라 F-doped SiOC : H 박막의 굴절률은 감소하는 경향을 보였다. $N_2O$ 가스 유량이 감소함에 따라 증착된 박막의 굴절률은 감소하였으며, rf power가 180W 기판온도 $100^{\circ}C$, 그리고 $N_2O$ 가스를 첨가하지 않은 조건에서 증착한 박막은 최소 굴절률인 1.3778을 갖는 것을 알 수 있었다. Rf power 60W에서 180W로 증가시킴에 따라 증착된 박막의 불소 함량은 1.9at%에서 2.4at%로 증가하였으며 이러한 이유로 박막의 굴절률은 감소하는 경향을 나타냈다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.227-250
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• 1999

The reproducibility of successive growth of Bi12TiO20(BTO) single crystals using a top-seeded solution growth (TSSG) pulling method was evaluated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established experimentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasize that a starting solution, with a 10.0~10.1 mol% TiO2 concentration, results in large single crystals with a highly homogeneous lattice constant of within $\pm$1x10-4$\AA$, when the solidified fraction of the grown crystal is less than about 45%. A wavelength dispersion of refractive index was measured for the first time, an it was verified that the refractive index of BTO is larger than that of BSO(Bi12TiO20), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.

• 치위생과학회지
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• 제15권2호
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• pp.159-165
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• 2015

구강건강관리행위의 실태를 파악하고, 치면세균막 검사법에 따른 치면세균막지수의 차이와 이 둘의 상관성을 조사하기 위해 2013년 10월부터 2014년 10월까지 경기도와 충청남도에 소재한 3개 대학의 치위생과 학생을 대상으로 자기기입식 설문지 작성과 치면세균막지수를 각각 측정하여 진행하여 다음과 같은 결론을 얻었다. 1년 이내에 구강검진을 받았다고 응답한 대상자는 62.8%, 예방치과처치를 한 번이라도 받아봤다고 응답한 대상자는 84.1%로 조사되었다. 불소가 포함된 세치제를 사용하고 있다고 응답한 대상자는 80.5%였으며, 칫솔질은 하루에 3회 한다고 응답한 대상자가 68.9%로 가장 높게 나타났다. 칫솔질 방법은 회전법이, 칫솔질 시간은 3분이 각각 90.9%, 50.0%로 조사되었다. 치면세균막 검사법 중 O'leary index로 조사한 결과 평균 27.88로 조사되었으며, PHP index는 평균 1.30, PHP-M index는 평균 12.12로 조사되었다. 구강건강관리행위에 따른 치면세균막지수는 칫솔질 시간이 통계적으로 유의한 차이를 보이는 것으로 조사되었다. 칫솔질 시간이 2분 이하일 경우 O'leary index 31.37, PHP index 1.61, PHP-M index 14.61로 조사되었으며, 4분 이상일 경우 O'leary index 23.32, PHP index 1.07, PHP-M index 9.59로 조사되어 칫솔질 시간이 늘어날수록 치면세균막지수는 낮아지는 것으로 나타났다(p<0.05). 치면세균막지수에 가장 영향을 미치는 요인은 "구강건강을 위한 칫솔질 여부" (B=-9.747, t=-3.752, p<0.001)로 나타났으며, 이는 통계적으로 유의한 차이를 보였다. 설명력은 O'leary index 13.3%, PHP index (B=-0.375, t=-3.016, p=0.003)와 PHP-M index (B=-4.541, t=-3.708, p<0.001)는 각각 12.3%, 17.5%로 조사되었다. 이상의 결과를 정리해보면, 치면세균막지수에 영향을 미치는 구강건강관리행위는 칫솔질 시간과 구강건강을 위한 칫솔질 여부로 조사되었다.

• 대한소아치과학회지
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• 제8권1호
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• pp.77-88
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• 1981

The purpose of this study was to make a comprehensive study & evaluation of the oral status of mental retarded children. The auther examined intraorally 486 (male; 311, female;175) mental retarded children. The result was as follows; (General mental retarded children means the children who live in their parent's home, & orphan mental retarded children means the children who live in orphanage.) 1. The dft rate was 31.6% in general mental retarded children (G.m.r.c.) & 20.7% in orphan mental retarded children (O. m. r. c.). The dft index was 3.73 in G.m.r.c. & 2.15 in O.m.r.c. 2. The DMFT rate was 24.6% in female G.m.r.c., 16.7% in male G.m.r.c., 12.7% in female O.m.r.c., 8.4% in male O.m.r.c. The DMFT index was 4.94 in female G.m.r.c., 4.01 in male G.m.r.c., 1.40 in male O.m.r.c., 2.75 in female O.m.r.c. 3. The malocclusion prevalence was 57.3%. the class I malocclusion was 14.2% Class II malocclusion 19.3%, Class III malocclusion 23.5%. The children with Down's syndrome had 60.0% of class III malocclusion prevalence. 4. The dental calculus index was 1.97 in male O.m.r.c., 1.81 in female O.m.r.c., 1.30 in male G.m.r.e., 1.13 in female G.m.r.c. 5. The dental plaque index was 3.06 in female G.m.r.c., 3.00 in male Gm.r.e. 2.70 in male O.m.r,c., 2.32 in female O.m.r.c.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• 한국세라믹학회지
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• 제37권2호
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• pp.117-121
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• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.

• 전자공학회논문지D
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• 제34D권10호
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• pp.77-84
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• 1997

The refractive index changes due to the electroptic effect are discussed when external electric fields $E_x, E_y, E_2$ are applied on $LiNbO_3$, a typical anisotropic material. Derived are approximate equations for principal axis' rotations and index changes, results of which are compared with exact results by te computer simulations. In each useful application of $LiNbO_3$substrate, the results of the approximate equations are confirmed to agree with exact solutions.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.