• 제목/요약/키워드: Nucleation layers

검색결과 51건 처리시간 0.03초

Effect of Additional Ag Layer on Corrosion Protection of Cu-Electrodeposited AZ31 Mg Alloy

  • Phuong, Nguyen Van;Moon, Sungmo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.97-97
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    • 2017
  • This study investigated the corrosion protection by electrodeposited copper layer on AZ31 Mg alloy with and without additional silver layer by immersion test, salt spray test, OCP transient and potentiodynamic polarization experiment. The single electrodeposited Cu layer on AZ31 Mg alloy showed a nodular structure with many imperfections of crevices between the nodules, which resulted in the fast initiation of pitting corrosion within first few hours of immersion. Double-layer coating of Cu and outer Ag layer slightly increased the initiation time for pitting corrosion. Triple-layer coatings of Cu/Ag/Cu exhibited the most efficient corrosion protection of AZ31 Mg alloy, compared to the single- and double-layer coatings. Surface morphology of the outer Cu layer in the triple-layer was changed from the nodular structure to fine particle structure with no crevices due to the presence of an additional Ag layer. Thus, the improved corrosion resistance of AZ31 Mg alloy by electrodeposited Cu/Ag or Cu/Ag/Cu layers is readily ascribed to the decreased number of imperfections in the electrodeposited layers due to the additional silver layer. It is concluded that the additional silver layer provides many nucleation sites for the second Cu plating, resulting in the formation of finer and denser structure than the first Cu electrodeposit.

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Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향 (The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films)

  • 박종만;김석;최두진;고대홍
    • 한국세라믹학회지
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    • 제35권8호
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    • pp.827-835
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    • 1998
  • Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

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리플로우과정의 용융 거동에 미치는 전기주석 도금층의 결정 형상 및 구조의 영향 (Effects of morphology and structure of electrolytic tin coating layers on the flow melting behaviors during reflow treatment)

  • 김태엽;조준형;이재륭;배대철;홍기정
    • 한국표면공학회지
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    • 제33권5호
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    • pp.373-380
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    • 2000
  • The flow melting behavior of the electrolytic tinplate during reflow treatment was investigated in terms of morphology and structure of coating layers which were electrodeposited with variation of electrolyte temperature. It was commonly found that the nucleation density of the electrodeposits showed little difference with the electrolyte temperature, and the growth of electrodeposited tin occurred along <100> direction of (002) plane. At low electrolyte temperature, the (002) plane of tin nucleated paralleling to the substrate and grew perpendicularly to the substrate, which rendered porous rod-like deposits. With increasing the temperature, the (002) plane nucleated declining $15^{\circ}$ to the substrate and also grew to the normal <100> direction, which enabled lateral growth of the tin crystals and rendered compact deposits. During reflow treatment, the matte deposit transformed to the reflowed state via transition regions consisted of contraction, island formation, and wetting . The matte deposits formed at low temperature exhibited wide transition regions because of poor thermal transfer between crystals due to their porous nature. While that formed at high temperature transformed very rapidly to the reflowed state by enhanced thermal transfer between the compact crystals.

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Study on the Formation Mechanism of Hard Chrome Surface Morphology by Atomic Force Microscopy

  • Lee, B.K.;Park, Y.;Kim, Man;S.C. Kwon
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2002년도 춘계학술발표회 초록집
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    • pp.35-35
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    • 2002
  • Atomic force microscopy was applied to study the formation and growth mechanism of thin chrome layers prepared under various pulse plating conditions. The chrome was electro-deposited from an electrolyte bath containing 250 gl-l of chromic acid, 25 gl-l of sulfuric acid using direct current density of $1.6{\;}mA.$\textrm{mm}^{-2} and pulse currents with on-off time from 5 to 900 ms. The higher current density enhanced nucleation rate which resulted in refining grain size. The chrome growth kinetics determining nodule size and shape significantly depends on the duration of on-time rather than duration of off-time and on/off time ratio.

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PZT(10/90)/(90/10)이종층 박막의 강유전특성에 관한 연구 (A study on the Ferroelectric Properties of PZT(10/90)/(90/10) Heterolayered Thin Films)

  • 김경태;박인길;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.109-112
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    • 1999
  • The PZT(10/90)/(90/17) heterolayered thin films were fabricated by the spin-coaling on the Pt/Ti/SiO$_2$/Si substrate using the PZT(10/90) and PZT(70/10) metal alkoxide solutions. The effect of heterolayered thin films on the ferroelectrics and electrical properties have been investigated. The lower PZT layers provided the nucleation site for the formation of a perovskite phase of the upper PZT films. Dielectric constant increased with increasing the number of coatings, and it was about 569.9 at PZT-6 heterolayered films.

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Metalorganic chemical vapor deposition of semiconducting ZnO thin films and nanostructures

  • Kim Sang-Woo
    • 한국결정성장학회지
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    • 제16권1호
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    • pp.12-19
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    • 2006
  • Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

Adhesion Strength Measurements of Cu-based Leadframe/EMC Interface

  • Lee, Ho-Young;Jin Yu
    • 마이크로전자및패키징학회지
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    • 제6권2호
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    • pp.1-12
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    • 1999
  • Brown oxide and/or black oxide layers were formed on the surface of Cu-based leadframe by chemical oxidation of leadframe in hot alkaline solutions, and their growth characteristics were studied. Then, to measure the adhesion strength between leadframe and epoxy molding compound (EMC), oxidized leadframe samples were molded with EMC and machined to form sandwiched double-cantilever beam (SDCB) specimens and pull-out specimens, respectively. Results showed that the adhesion strength of un-oxidized leadframe/EMC interface was inherently very poor but could be increased drastically with the nucleation of acicular CuO precipitates on the surface of leadframe. The presence of smooth faceted $Cu_2O $ on the surfaces of leadframe gave close to zero interfacial fracture toughness (Gc) and reasonable pull strength (PS). A direct correlation between Gc and PS showed that PS can be a measure of Gc only in a limited range.

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Carbide Grain Growth in Cemented Carbides

  • Mannesson, Karin;Agren, John
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.336-337
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    • 2006
  • During sintering of cemented carbides abnormal grain growth is often observed but cannot be understood from the classical LSW-theory. A model based on 2-D nucleation of new crystalline layers and a grain-size distribution function is formulated and the equations are solved numerically. Experimental studies and computer simulations show that the initial grain size distribution has a strong effect on the grain growth behavior. For example, a fine-grained powder can grow past a coarser powder.

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솔-젤법으로 제작한 PZT 이종층 박막의 구조적 특성 (Microstructural Properties of PZT Heterolayered Thin Films Prepared by Sol-Gel Method)

  • 이성갑;김경태;정장호;박인길;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.311-314
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    • 1999
  • Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

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전처리를 이용한 탄소 나노 섬유의 균일한 SnO2 코팅막 형성 (Formation of Uniform SnO2 Coating Layer on Carbon Nanofiber by Pretreatment in Atomic Layer Deposition)

  • 김동하;류도형;최병준
    • 한국분말재료학회지
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    • 제25권1호
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    • pp.43-47
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    • 2018
  • Carbon nanofibers (CNF) are widely used as active agents for electrodes in Li-ion secondary battery cells, supercapacitors, and fuel cells. Nanoscale coatings on CNF electrodes can increase the output and lifespan of battery devices. Atomic layer deposition (ALD) can control the coating thickness at the nanoscale regardless of the shape, suitable for coating CNFs. However, because the CNF surface comprises stable C-C bonds, initiating homogeneous nuclear formation is difficult because of the lack of initial nucleation sites. This study introduces uniform nucleation site formation on CNF surfaces to promote a uniform $SnO_2$ layer. We pretreat the CNF surface by introducing $H_2O$ or $Al_2O_3$ (trimethylaluminum + $H_2O$) before the $SnO_2$ ALD process to form active sites on the CNF surface. Transmission electron microscopy and energy-dispersive spectroscopy both identify the $SnO_2$ layer morphology on the CNF. The $Al_2O_3$-pretreated sample shows a uniform $SnO_2$ layer, while island-type $SnO_x$ layers grow sparsely on the $H_2O$-pretreated or untreated CNF.