• 한국표면공학회지
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• 제32권3호
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.394-400
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• 2018

The current work investigates the effects of nucleation heat treatments, on the microstructure and mechanical properties of a novel silicate glass in $Li_2O-BaO-SiO_2$ system with 1 mol% $P_2O_5$ as nucleating agent. As-cast glass was exposed to nucleation heat treatments at $490-550^{\circ}C$ for 1-3 h. The microstructural examination was performed by SEM/EDS. The highest Vickers microhardness was determined to be 650 Hv for the sample heat treated at $550^{\circ}C$ for 1 h. The increase in the nucleation time also affected Vickers microhardness and the highest one was determined to be 600 Hv after nucleation for 3 h. The fracture toughness, $K_{IC}$ reached $2.51MPa.m^{1/2}$ after nucleation at $550^{\circ}C$ for 1 h. The nucleation temperatures had a more pronounced effect on the fracture toughnesses in comparison to nucleation times. The indentation toughness data was used to determine Weibull parameters from Ln ln [1/(1-P)]-$lnK_{IC}$ plots. Weibull modulus, m of the samples nucleated at 500, 510, 530, $550^{\circ}C$ for 1h. and $540^{\circ}C$ for 2 h. were determined similarly to be 3.8, 3.5, 4.7 and 3.9, respectively. The rest of the samples indicated higher Weibull moduli, which may be attributed to the formations of microcracks due to the mismatch in between newly formed crystals and remaining glassy matrix.

• 한국재료학회지
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• 제14권5호
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• 한국세라믹학회지
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• 제18권3호
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• pp.163-170
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• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• 한국주조공학회지
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• 제14권6호
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• pp.520-529
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• 1994

This study describes the influence of the trace amount of sulphur on the nucleation behavior of graphite crystals in high purity Fe-C-Si alloys prepared by levitation melting method. Detailed microstructural analyses of high purity(HP) and sulphur added(HP＋S) samples showed that the nucleation of graphite crystals was prevented by sulphur. With decreasing the sulphur content, the shape of graphite crystals tended to spherulitic, and below 2ppm S, that of graphite crystals was only nodular. The critical cooling rate for the nucleation of griphite crystals was calculated as $1.5{\times}10^3k/s$. It is obvious from this work that residual C-C clusters act as an effective nucleation site for graphite crystals and one of the important role of nodularizing elements is to act as scavenger which removes harmful impurities from the solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• 한국세라믹학회지
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• 제26권5호
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• pp.705-711
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• 1989

The glass-ceramics was prepared with the scoria(CaO-MgO-Al2O3-SiO2 system) of the locally occurring volcanic ejecta containing 10-13w/o of (FeO＋Fe2O3) by melting at 140$0^{\circ}C$ for 4 hours and thermally treated for nucleation and crystallization. The sucrose was added to the scoria to adjust the Fe2+/Fe3+ ratio during the melting process. The addition of 1-2w/o of sucrose showed the glass-ceramics body with the finest particle developed and dispersed over the entire range. It is concluded that the impurity content of iron oxide and titanium oxide play the most-influencial effect on the crystallization. When 1-2w/o of sucrose was added to the scoria, the value of Fe2+/Fe3+ ratio was 0.93-1.32 and showed the best result of crystallization. The nucleation temperature and time were calculated by the measurements of exothermic peak temperatures of DTA for quenched and thermally treated glasses. The nucleation temperature of scoria glass without the addition of sucrose was estimated as 75$0^{\circ}C$, but the addition of sucrose by 2w/o showed the nucleation temperature 6$25^{\circ}C$. The nucleation time was calculated with the same DTA curves. The nucleation times estimated were about 150min. for both of glasses without and with sucrose added. Finally, the activation energies for crystallization were calculated with the DTA data. The calculated activation energies were 143 Kcal/mole for the glass without addition of sucrose and 90Kcal/mole, 87Kcal/mole, 85Kcal/mole and 71Kcal/mole for the glasses of 1w/o, 2w/o, 3w/o and 4w/o addition respectively.

• 한국세라믹학회지
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• 제34권6호
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.