• 대한방사선기술학회지:방사선기술과학
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• 제40권4호
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• pp.533-542
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• 2017

진단용 X선 영상에서 산란선은 화질을 열화시키는 주요한 원인이다. X선 장치는 필름/스크린을 사용한 아날로그 시스템부터 Imaging plate (IP) 및 평판 검출기(Flat panel detector; FPD)를 사용한 디지털 시스템으로 바뀌어 가고 있다. 그러나 산란 X선 제거를 위한 Grid는 아날로그 시대에 사용됐던 구조부터 큰 변화가 없다. 본 논문에서는 선행연구에서 고안된 산란선 제거율을 향상시키기 위한 간접변환형 평판검출기의 새로운 구조를 다양한 입사 X선을 사용하는 임상현장에서의 활용 가능성을 검토했다. 일반적으로 FPD는 3개의 층으로 구성되어 있다. 신호를 검출하는 화소와 화소 사이에는 전압을 거는 voltage line이나 데이터를 전달하는 data line과 같은 X선 불감영역이 존재한다. 선행연구에서는 이 불감영역에 정확히 맞추어 방사선 불 투과성의 납을 그물 모양으로 substrate layer에 삽입함으로서 검출기 자체가 산란선 제거 효과가 있도록 설계하였다. 새로운 구조의 임상 유용성을 평가하기 위해, 삽입된 그물 모양의 납을 입사 X선에 대해 가로, 세로성분으로 나누어 각각의 성능을 확인하였으며, 동시에 납의 높이를 변화시켜 납 높이가 성능에 미치는 영향을 영상 대조도와 grid 노출 인자를 통해 검토했다. 검출기면에 대해 대각선으로 입사한 X선($0^{\circ}$, $15^{\circ}$, $30^{\circ}$)에 대해서, 입사 X선에 대해 평행한 가로성분이 세로 성분에 비해 높은 영상 대조도와 낮은 그리드 노출 인자를 나타냈으며, 세로성분의 납 높이가 높을수록 본 연구에서 고안한 검출기에 악영향을 미치는 것을 확인했다. 그러므로 본 연구에서 고안한 새로운 FPD 시스템은 FPD의 구조를 방사선검사 조건과 목적에 맞추어 최적화함으로써 임상 의료현장에서의 사용 가능성이 확인되었다.

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 1996년도 정기총회 및 학술발표회
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• pp.10-10
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• 1996

High-resolution solution conformation of a novel conotoxin, [Pro 7,13] $\alpha$A-conotoxin $P_{IVA}$, GCCGSYPNAACHPCSCKDROSYCGQ-N $H_2$, has been determined by two-dimensional $^1$H nmr methods in combination with distance geometry calculation to rmsd values of 0.90 $\AA$ and 1.16 $\AA$ for the backbone and heavy atoms, respectively. Total of 324 NOE-derived interproton distance restraints including 33 long-range NOE restraints a well as 11 $\Phi$ and 7 $\chi$$^1$ torsion angle restraints were used for computation of structures. (omitted)d)

• ETRI Journal
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• 제44권2호
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• pp.260-273
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• 2022

This study presents a novel multilayer structure of parallel coupled-line bandpass filtercentered at 2.42 GHz with a fractional bandwidth value of approximately 19.4%. The designed filter can suppress harmonics with an appropriate frequency response by incorporating different techniques based on the multilayer technique. A combination of different techniques such as radial microstrip stubs and defected ground structure (DGS) and defected microstrip structure techniques are employed to suppress harmonics up to 5f₀. These techniques are used in two layers to suppress up to 5f₀. In addition, in this study, the effects of different parameters, such as the width of slot-line DGS, the angle of diagonal line slots in the upper layer, and the air gap between the two layers on the filter performance, are investigated. To verify the correct circuit operation, the designed filter is implemented and tested. The measurement results of the proposed filter are compared with the simulation results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Steel and Composite Structures
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• 제33권6호
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• pp.877-889
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• 2019

The developments of double skin composite (DSC) walls with novel enhanced C-channel connectors (DSCW-EC) were reported. Followed axial compression tests on prototype walls were carried to evaluate structural performances of this novel DSC composite structures. The testing program consists of five specimens and focused on the layout of the novel enhanced C-channel (EC) connectors, which include the web direction of C-channels, steel-faceplate thickness, vertical and horizontal spacing of C-channels. Crushing in concrete core and buckling of steel faceplate were two main observed failed modes from the compression tests. However, elastic or plastic buckling of the steel faceplate varies with designed parameters in different specimens. The influences of those investigated parameters on axial compressive behaviors of DSCW-ECs were analyzed and discussed. Recommendations on the layout of novel EC connectors were then given based on these test results and discussions. This paper also developed analytical models for predictions on ultimate compressive resistance of DSCW-ECs. Validation against the reported test results show that the developed theoretical models predict well the ultimate compressive resistance of DSCW-ECs.

• 전자공학회논문지A
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• 제30A권7호
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• pp.32-37
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• 1993

A novel insulated gate bipolar transister (IGBT), called insulated trench cathode IGBT (ISTC-IGBT), is proposed. ISTC-IGBT has a trenched well with the shallow P$^{+}$ juction in the conventional IGBT structure. The proposed structure has the capability of effectively suppressing the parasitic thyristor latchup. The holding current of ISTC-IGBT is about 2.2 times greater than that of the conventional IGBT. Detailed analysis of the latchup characteristics of ISTC-IGBT is performed by using the two-dimensional device simulator, PISCES-II B.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.107-113
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• 2003

Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.

• 제어로봇시스템학회논문지
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• 제11권6호
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• pp.524-529
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• 2005

In this paper, a novel neural network compensation technique for PD like fuzzy controlled robot manipulators is presented. A standard PD-like fuzzy controller is designed and used as a main controller for controlling robot manipulators. A neural network controller is added to the reference trajectories to modify input error space so that the system is robust to any change in system parameter variations. It forms a neural-fuzzy control structure and used to compensate for nonlinear effects. The ultimate goal is same as that of the neuro-fuzzy control structure, but this proposed technique modifies the input error not the fuzzy rules. The proposed scheme is tested to control the position of the 3 degrees-of-freedom rotary robot manipulator. Performances are compared with that of other neural network control structure known as the feedback error learning structure that compensates at the control input level.

• Journal of Information Display
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• 제1권1호
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• pp.29-31
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• 2000

A 21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixels is successfully developed. To obtain X-ray image of satisfactory quality, a novel structure with a storage electrode on BCB is proposed. The structure reduces the parasitic capacitance of data line, which is one of the main sources of signal noise. Also, the structure shows greater resistance to failure than that of the conventional design.