Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 7
- /
- Pages.32-37
- /
- 1993
- /
- 1016-135X(pISSN)
A Novel Inserted Trench Cathode IGBT Device with High Latching Current
높은 latch-up 전류특성을 갖는 트랜치 캐소드 삽입형 IGBT
Abstract
A novel insulated gate bipolar transister (IGBT), called insulated trench cathode IGBT (ISTC-IGBT), is proposed. ISTC-IGBT has a trenched well with the shallow P
Keywords