• Journal of radiological science and technology
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• v.40 no.4
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• pp.533-542
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• 2017

In diagnostic radiology, the imaging system has been changed from film/screen to digital system. However, the method for removing scatter radiation such as anti-scatter grid has not kept pace with this change. Therefore, authors have devised the indirect flat panel detector (FPD) system with net-like lead in substrate layer which can remove the scattered radiation. In clinical context, there are many radiographic examinations with angulated incident X-ray. However, our proposed FPD has net-like lead foil so the vertical lead foil to the angulate incident X-ray would have bad effect on its performance. In this study, we identified the effect of vertical/horizontal lead foil component on the novel system's performance and improved the structure of novel system for clinical usage with angulated incident X-ray. Grid exposure factor and image contrast were calculated to investigate various structure of novel system using Monte Carlo simulation software when the incident X-ray was tilted ($0^{\circ}$, $15^{\circ}$, and $30^{\circ}$ from the detector plane). More photons were needed to obtain same image quality in the novel system with vertical lead foil only then the system with horizontal lead foil only. An optimal structure of novel system having different heights of its vertical and horizontal lead foil component showed improved performance compared with the novel system in a previous study. Therefore, the novel system will be useful in a clinical context with the angulated incident X-ray if the height and direction of lead foil in the substrate layer are optimized as the condition of conventional radiography.

• Proceedings of the Korean Biophysical Society Conference
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• 1996.07a
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• pp.10-10
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• 1996

High-resolution solution conformation of a novel conotoxin, [Pro 7,13] $\alpha$A-conotoxin $P_{IVA}$, GCCGSYPNAACHPCSCKDROSYCGQ-N $H_2$, has been determined by two-dimensional $^1$H nmr methods in combination with distance geometry calculation to rmsd values of 0.90 $\AA$ and 1.16 $\AA$ for the backbone and heavy atoms, respectively. Total of 324 NOE-derived interproton distance restraints including 33 long-range NOE restraints a well as 11 $\Phi$ and 7 $\chi$$^1$ torsion angle restraints were used for computation of structures. (omitted)d)

• ETRI Journal
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• v.44 no.2
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• pp.260-273
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• 2022

This study presents a novel multilayer structure of parallel coupled-line bandpass filtercentered at 2.42 GHz with a fractional bandwidth value of approximately 19.4%. The designed filter can suppress harmonics with an appropriate frequency response by incorporating different techniques based on the multilayer technique. A combination of different techniques such as radial microstrip stubs and defected ground structure (DGS) and defected microstrip structure techniques are employed to suppress harmonics up to 5f₀. These techniques are used in two layers to suppress up to 5f₀. In addition, in this study, the effects of different parameters, such as the width of slot-line DGS, the angle of diagonal line slots in the upper layer, and the air gap between the two layers on the filter performance, are investigated. To verify the correct circuit operation, the designed filter is implemented and tested. The measurement results of the proposed filter are compared with the simulation results.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Steel and Composite Structures
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• v.33 no.6
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• pp.877-889
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• 2019

The developments of double skin composite (DSC) walls with novel enhanced C-channel connectors (DSCW-EC) were reported. Followed axial compression tests on prototype walls were carried to evaluate structural performances of this novel DSC composite structures. The testing program consists of five specimens and focused on the layout of the novel enhanced C-channel (EC) connectors, which include the web direction of C-channels, steel-faceplate thickness, vertical and horizontal spacing of C-channels. Crushing in concrete core and buckling of steel faceplate were two main observed failed modes from the compression tests. However, elastic or plastic buckling of the steel faceplate varies with designed parameters in different specimens. The influences of those investigated parameters on axial compressive behaviors of DSCW-ECs were analyzed and discussed. Recommendations on the layout of novel EC connectors were then given based on these test results and discussions. This paper also developed analytical models for predictions on ultimate compressive resistance of DSCW-ECs. Validation against the reported test results show that the developed theoretical models predict well the ultimate compressive resistance of DSCW-ECs.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.32-37
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• 1993

A novel insulated gate bipolar transister (IGBT), called insulated trench cathode IGBT (ISTC-IGBT), is proposed. ISTC-IGBT has a trenched well with the shallow P$^{+}$ juction in the conventional IGBT structure. The proposed structure has the capability of effectively suppressing the parasitic thyristor latchup. The holding current of ISTC-IGBT is about 2.2 times greater than that of the conventional IGBT. Detailed analysis of the latchup characteristics of ISTC-IGBT is performed by using the two-dimensional device simulator, PISCES-II B.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.107-113
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• 2003

Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.

• Journal of Institute of Control, Robotics and Systems
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• v.11 no.6
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• pp.524-529
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• 2005

In this paper, a novel neural network compensation technique for PD like fuzzy controlled robot manipulators is presented. A standard PD-like fuzzy controller is designed and used as a main controller for controlling robot manipulators. A neural network controller is added to the reference trajectories to modify input error space so that the system is robust to any change in system parameter variations. It forms a neural-fuzzy control structure and used to compensate for nonlinear effects. The ultimate goal is same as that of the neuro-fuzzy control structure, but this proposed technique modifies the input error not the fuzzy rules. The proposed scheme is tested to control the position of the 3 degrees-of-freedom rotary robot manipulator. Performances are compared with that of other neural network control structure known as the feedback error learning structure that compensates at the control input level.

• Journal of Information Display
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• v.1 no.1
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• pp.29-31
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• 2000

A 21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixels is successfully developed. To obtain X-ray image of satisfactory quality, a novel structure with a storage electrode on BCB is proposed. The structure reduces the parasitic capacitance of data line, which is one of the main sources of signal noise. Also, the structure shows greater resistance to failure than that of the conventional design.