• 정보과학회 논문지
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• 제42권3호
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• pp.379-389
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• 2015

Phase Change Memory (PCM 또는 PRAM), Magneto Resistive RAM (MRAM)과 같은 차세대 비휘발성 메모리가 등장하면서, Dynamic Random-Access Memory (DRAM)을 PRAM으로 대체하는 연구가 활발히 진행되고 있다. 본 논문에서는 PRAM을 메인 메모리로 사용하는 시스템에서 지금까지 널리 사용되고 있는 기존의 조인 알고리즘(블록 네스티드 조인, 소트-머지 조인, 그레이스 해시 조인, 하이브리드 해시 조인)들을 사용했을 때 발생하는 내구성과 성능 문제를 비교, 분석한다. 본 연구의 실험결과에 의하면 기존의 조인 알고리즘들을 PRAM에 맞게 재설계해야 하는 필요성이 제기되었다. 특히, 본 연구는 조인 알고리즘들을 PRAM에 적용했을 때 발생하는 이슈들을 과학적으로 규명한 첫 시도이다. 그리고 기존의 조인 알고리즘들을 PRAM에 적용했을 때 발생하는 내구성과 성능을 비교하기 위한 PRAM 기반의 시스템을 모델링하고 시뮬레이터를 구현한 것에 연구의 의의를 둘 수 있다.

• Journal of Advanced Marine Engineering and Technology
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• 제29권6호
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• 제31권4호
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• pp.410-416
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• 2007

PRAM (Phase change random access memory) is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to change the heater electrode material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of heater electrode material parameters using finite element analysis. From the simulation. the reset current of PRAM cell is reduced from 2.0 mA to 0.72 mA as the electrical conductivity of heater is decreased from $1.0{\times}10^6\;(1/{\Omega}{\cdot}m$) to $1.0{\times}10^4\;(1/{\Omega}{\cdot}m$). As the thermal conductivity of heater is decreased, the reset current is slightly reduced. But the reset current of PRAM cell is not changed as the specific heat of heater is changed.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.243-248
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• 2010

The emergence of different and disparate materials together with the convergence of both the 'old' and 'emerging' technologies is paving the way for integration of heterogeneous technologies that are likely to extend the limitations of silicon technology beyond the roadmap envisaged for complementary metal-oxide semiconductor. Formulation of new information processing concepts based on novel aspects of nano-scale based materials is the catalyst for new nanoarchitectures driven by a different perspective in realization of novel logic devices. The memory technology has been the pace setter for silicon scaling and thus far has pave the way for new architectures. This paper provides an overview of the inevitability of heterogeneous integration of technologies that are in their infancy through initiatives of material physicists, computational chemists, and bioengineers and explores the options in the spectrum of novel non-volatile memory technologies considered as forerunner of new logic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1044-1046
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• 2009

Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.144-145
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• 2007

Phase change random access memory is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to develop the new phase change material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of phase change material parameters using finite element analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• 한국통신학회논문지
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• 제29권4B호
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• pp.403-410
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• 2004

일반적으로 교환 시스템은 프로세서 보드, 입출력처리 보드 및 데이터 저장 장치등 그 기능별로 다수의 서브시스템들로 구성되어 있다. 또한 신뢰성을 확보하기 위하여 모든 서브 보드들은 이중화로 되어 있다. 교환시스템에서 저장 장치에는 시스템에 관련된 정보나 과금 정보등과 같은 작업 관련 데이터를 저장하며 비 휘발성 메모리에 저장해야 한다. 일반적으로 비 휘발성 저장장치를 구현할 때는 플래시메모리(flash memory) 또는 배터리 백업 메모리(battery backup memory)를 사용한다. 그러나 메모리는 단위 용량당 가격이 높고 백업(backup) 하지 않은 데이터를 손실했을 때 복구할 수 없다. 본 논문에서는 마이크로 컨트롤러를 이용하여 단위 용량당 가격이 저렴하고, 대용량의 데이터를 저장함과 동시에 이중화를 만족시키는 on-board 형태의 소형 디스크 모듈을 설계 구현하였다. 본 논문에서 구현된 이중화 저장장치는 사용 중인 엑티브(active) 디스크에 결함이 생겨 사용할 수 없을 경우에 리빌딩(rebuilding)과정을 동해 스탠바이 모듈로부터 데이터를 복구하며, 리빌딩 중에도 호스트 시스템은 스탠바이 디스크모듈을 이용하여 지속적으로 서비스를 제공할 수 있도록 설계되었다. 본 연구에서 개발된 저장장치는 교환시스템에서 플래시 메모리와 같은 값비싼 저장 장치를 대체 할 수 있을 것으로 기대된다.