Electromagnetic and Thermal Analysis of PRAM cell with phase change material

상변화 재료의 물질상수에 따른 PRAM cell의 전자장 및 열 해석

  • Published : 2007.06.21

Abstract

Phase change random access memory is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to develop the new phase change material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of phase change material parameters using finite element analysis.

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