• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1998년도 춘계학술대회 논문집
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• pp.100-105
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• 1998

Image processing was used to recognize parts at various disposition. Non-transpatent tachometer panel for automobile and semi-transparent panel have been used as test specimen. Laplacian filter and various threshold values have been applied for preprocessing and edge following algorithm has been applied. Series of length data between edges have been generated from each image and compared using cross correlation coefficient. The result using cross correlation coefficient. The result using both edge following and cross correlation coefficient was proven to be the best fit for the proposed parts.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2018년도 추계학술발표대회
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• pp.87-88
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• 2018

PCIe 스위칭 기술을 이용하면 시스템 내부의 디바이스들의 연결을 넘어 노드간 통신에도 PCIe 버스를 활용할 수 있다. 이때 기존의 확장 케이블이 갖는 물리적인 한계를 극복하기 위하여 광통신을 활용하는 경우가 있다. 본 연구에서는 초소형 온 보드형 광모듈을 활용하여 자체 제작한 PCIe 어댑터카드의 NTB(Non-Transparent Bridging) 포트를 활용하여 노드간 통신을 수행한 결과를 소개한다.

• Journal of Plant Biology
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• 제28권4호
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• pp.329-332
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• 1985

A simple new device for obtaining very clear epidermal imprints for light microscopic studies is discussed. This new device is developed from“Britfix”(polystyrene cement) which is non-toxic to the plant organs. It involves direct application of the material on the desired surface of the plant organ to obtain thin, transparent replica. From the present investigation“Britfix”is found to be useful for the study of epidermal anatomy, morphology and physiology. Epidermal imprints can be mounted on the microscope slide without a mounting medium. Permanent slide of these imprints can be kept for any desired period without any deterioration of the replica.

• 한국위성정보통신학회논문지
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• 제9권3호
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• pp.22-26
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• 2014

본 연구에서는 액정의 수직배향을 달성하기 위해서 특별히 제조된 폴리스타일렌 박막에 다양한 이온빔을 조사하는 방법을 사용하였다. 일반적으로 폴리스타일렌 수지는 통상의 폴리이미드 계열의 수지에 비해서 박막코팅을 하였을 때 보다 우수한 투과율을 나타내므로, 투과형 디스플레이로 사용되는 LCD의 배향막 재료로 더 적합하다고 생각되었다. 특히 고휘도이면서 저전력 사양을 달성하여야 하는 휴대용 디스플레이에서의 응용가능성이 기대되었다. 그러나, 일반적인 러빙법에 의한 배향처리에 대해서는 액정분자의 배향성이 폴리이미드 계열의 재료에 비해서 열등하여 사용되지 못하였다. 본 연구에서는 폴리스타일렌 계열의 박막재료를 배향막으로 가공함에 있어서 새로운 이온빔 조사법에 의한 비접촉식 배향법을 사용하였으며, 배향성과 액정분자의 프리틸트각 특성에 대해서 정량적인 결과를 얻을 수 있었다. 실험에서는 폴리스타일렌 수지에 이온빔의 조사시간을 15초까지 변화시키면서 액정분자의 배향성 및 프리틸트각의 특성을 측정하였다. 측정결과 스마트폰 및 휴대용 정보단말기 등의 디스플레이에 적합한 고투과율 액정표시소자의 구현이 가능하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 정보처리학회논문지A
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• 제16A권2호
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• pp.55-60
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• 2009

병행 Java 프로그램의 경합은 프로그램의 비결정성을 초래하므로 반드시 탐지되어야 한다. 이러한 경합을 수행 중에 탐지하기 위해서는 스레드에 대한 수행양상과 모든 접근사건들을 감시할 수 있어야 한다. 기존의 경합탐지 기법들은 프로그램의 수행중에 기록된 파일들을 분석하거나 대상 프로그램을 수정하여 감시하므로 스레드나 모든 접근사건들에 대한 감시가 현실적으로 어렵다. 본 연구에서는 JDI(Java Debug Interface)를 이용하여 스레드에 대한 수행양상과 모든 접근사건을 감시하여 확장적 경합탐지를 할 수 있는 투명한 감시도구를 제안한다. 여기서 JDI는 JDPA(Java Platform Debugger Architecture)에서 제공하는 상위 레벨의 100% 순수 자바 인터페이스로써 자바프로그램의 수행중에 특정 정보를 제공할 수 있다. 그리고 제안된 도구의 투명성을 입증하기 위해서 벤치마크 프로그램으로 실험한 결과, 모든 스레드와 접근사건들을 프로그램 수정없이 감시할 수 있었고 프로그램의 감시시간이 20배 이상 증가되었다.

• Current Optics and Photonics
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• 제2권5호
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• pp.474-481
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• 2018

We propose a polarization phase-shifting technique to investigate the thickness of $Ta_2O_5$ thin films deposited on BK7 substrates, using a modified Sagnac interferometer. Incident light is split by a polarizing beam splitter into two orthogonal linearly polarized beams traveling in opposite directions, and a quarter-wave plate is inserted into the common path to create an unbalanced phase condition. The linearly polarized light beams are transformed into two circularly polarized beams by transmission through a quarter-wave plate placed at the output of the interferometer. The proposed setup, therefore, yields rotating polarized light that can be used to extract a relative phase via the self-reference system. A thin-film sample inserted into the cyclic path modifies the output signal, in terms of the phase retardation. This technique utilizes three phase-shifted intensities to evaluate the phase retardation via simple signal processing, without manual adjustment of the output polarizer, which subsequently allows the thin film's thickness to be determined. Experimental results show that the thicknesses obtained from the proposed setup are in good agreement with those acquired by a field-emission scanning electron microscope and a spectroscopic ellipsometer. Thus, the proposed interferometric arrangement can be utilized reliably for non-contact thickness measurements of transparent thin films and characterization of optical devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.