• Title/Summary/Keyword: Noise temperature

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The calculation and Measurement Methods for G/T of the Telemetry Small Aperture Antenna (원격자료수신장비 소형반사판 안테나 G/T 예측 및 측정)

  • Kim, Chun-Won;An, Na-Gyun;Kim, Dong-Hyun;Cho, Byung-Lok
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.50 no.9
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    • pp.657-662
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    • 2022
  • In this paper, the calculation using simulation and two measurement methods for G/T of the telemetry are analyzed. Antenna gain and noise temperature are calculated by using ICARA and Antenna Noise Temperature Calculator. System G/T were calculated by using Antenna gain/noise temperature, LNA gain/noise temperature, cable loss. The first G/T measurement method is Y-factor measurement method, which is to calculate G/T by comparing LNA noise temperature and a signal level difference when an antenna and a 50ohm termination are respectively connected to an LNA input terminal Second method is Solar calibration measurement method that is to calculate G/T by comparing noise level difference when looking at the sun and lowest level point. Finally, the accuracy was reviewed by comparing the G/T calculation results with the two measurement methods, and the optimal measurement method according to antenna performance and operating environment was presented.

Temperature-dependent Characteristics of Discharge in AC-PDP (교류형 PDP의 온도에 따른 방전특성)

  • Kim, Gun-Su;Lee, Seok-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.3
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    • pp.239-247
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    • 2009
  • In AC-PDP, it is necessary to achieve high luminance efficacy, high luminance and high resolution by adopting technologies such as high Xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they reduce driving voltage margin. For example, doping of MgO reduces driving voltage but introduces new problems such as increased temperature dependency of discharge, which result in larger variations in driving margin at different temperatures. In this paper, we present the experimental results of the characteristics of temperature-dependent discharges. In addition, we suggest the mechanism of bright noise, black noise, and high temperature mis-discharge, which depend on temperature-dependent characteristics of MgO.

Temperature Control for LED lamps using RF Communication (LED 조명 발열의 순차 제어시스템 연구)

  • Choi, Hyeng-Sik;Shin, Hee-Young;Oh, Ji-Youn;Lee, Sang-Seop
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2012.06a
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    • pp.130-132
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    • 2012
  • In this paper, a temperature control for LED(Light Emitting Diode) lamp using a cooling fan is studied. An efficient temperature control scheme for the LED lamp using the fan wind at the lowest sound noise is studied. For the study, after measurement of the minimum sound noise of the fan and related temperature of the LED lamp through tests, experiments on temperature control of the LED lamp using the fan with various size of heat sinks was performed. To minimize the fan sound noise, optimal size of the heat sink was studied. Also, a teleoperting control of LED lamps using RF communication was studied.

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1/f Noise Characteristics of Sub-100 nm MOS Transistors

  • Lee, Jeong-Hyun;Kim, Sang-Yun;Cho, Il-Hyun;Hwang, Sung-Bo;Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.1
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    • pp.38-42
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    • 2006
  • We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing $V_{DS}$. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.

Development of High Temperature Resistant Sound Absorbing Materials Using Meta-aramid Fiber (메타-아라미드 섬유를 이용한 자동차용 고내열 흡음재 개발)

  • Kim, Keun-Young;Seo, Won-Jin;Jung, Ki-Youn;Seo, Jong-Beom;Cho, In-Goo
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.23 no.9
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    • pp.857-862
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    • 2013
  • Recently, the importance of GDI and diesel engine noise reduction is required, so newly designed components very close to noise sources are added in order to maximize the sound absorbing performances. In this study, the high temperature resistant part made with meta-Aramid nonwoven, which was applicable for high temperature applications of about $200^{\circ}C$ or more, such as engines and exhaust systems, was developed. And three-dimensional shaped component was successfully fabricated, and it was observed high temperature resistance of $260^{\circ}C$, lightweight properties and the noise was decreased by 1.0 dB with 70 g of product.

Uncertainty in the Calibration of Coaxal Thermal Noise Sources using a Noise Figure Measuring Equipment

  • Kang, Tae-Weon;Kim, Jeong-Hwan;Park, Jeong-Il
    • Journal of electromagnetic engineering and science
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    • v.4 no.2
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    • pp.79-86
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    • 2004
  • In this paper, the uncertainty in the calibration of coaxial thermal noise sources using a noise figure measuring (NFM) equipment is evaluated. Contributions to the uncertainty such as the calibration uncertainty of the standard noise source, mismatch, measurement of adapter efficiency, ambient temperature variation, and repeatability are evaluated in the frequency range of 10 MHz to 18 ㎓. Results show that the expanded uncertainty(k=2) is 0.23 ㏈ for the noise sources of 5 ㏈ and 15 ㏈ ENR, and 0.27 ㏈ for those of 21 ㏈.

Realization of Primary Thermometer from Electrical Shot Noise in a Metal-Insulator-Metal Tunnel Junction (Metal-Insulator-Metal 터널접합의 산탄잡음을 이용한 일차 온도계 구현)

  • Park, J.H.;Rehman, M.;Choi, J.S.;Khim, Z.G.;Ryu, S.W.;Song, W.;Chong, Y.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.96-99
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    • 2010
  • We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

The design of 85GHz-115Ghz band SIS mixer for the observing cosmic radio waves (85GHz-115Ghz 대 우주전파 관측용 초전도체 믹서 설계)

  • 한석태;김효령;이창훈;박종애;정현수;김광동;김태성;박동철
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.6
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    • pp.90-98
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    • 1996
  • We have evaluated the theoretical conversion loss and noise temperature of mixer using the quantum mixer theory and the method to determine the embedding impedance of waveguide-type mixer mount. At fixed backshort position of the mixer, the calculated SSB mixer conversion loss and mixer noise temperature are 5 dB and 10K within frequency range form 85 GHz to 115 GHz, respectively. The SIS mixer has been developed by using through on the calculated rsutls to observe cosmic radio waves. SIS junction of mixer is Nb/Al-AlOx/Nb and it consists of four series array. Area of each of junction is about 2.5${\mu}m^{2}$. The average receiver noise temperature of manufactured receiver with this mixer is about 30 K(DSB). The receiver noise temperature is much lower than that of receiver with a mixer using mechanical tuning backshort.

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Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

  • Bhattacharya, Monika;Jogi, Jyotika;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.331-341
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    • 2013
  • In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.