JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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1/f Noise Characteristics of Sub-100 nm MOS Transistors

  • Lee, Jeong-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kim, Sang-Yun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Cho, Il-Hyun (R&D center, Magnachip Semiconductor Ltd.) ;
  • Hwang, Sung-Bo (R&D center, Magnachip Semiconductor Ltd.) ;
  • Lee, Jong-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • Published : 2006.03.31
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Abstract

We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing $V_{DS}$. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.

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References

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