• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.8-13
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• 1998

This work presents the way how to evaluate the degree of reversibility of the discharging process undergone by the nickel hydroxide film cathodically deposited on pure nickel as a positive electrode for electrochemical capacitor using the combined cyclic voltammetry and potential drop method, supplemented by galvanostatic discharge and open-circuit potential transient methods. The time interval necessary just to establish the current reversal of anodic to cathodic direction from the moment just after applying the potential inversion of anodic to cathodic direction, was obtained on cyclic voltammogram. The cathodic charge density passed upon dropping the applied potential, was calculated on potentiostatic current density-time curve. Both the time interval and the cathodic charge density in magnitude can be regarded as being measures of the degree of reversibility of the discharging process undergone by the positive active material for supercapacitor, i.e. , the longer the time interval is, the lower is the degree of reversibility and the greater the cathodic charge density is, the higher is the degree of reversibility. From the applied potential dependences of the time interval and cathodic charge density, discharge at $0.42 V_{SCE}$ was determined to be the most reversible.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.204-210
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• 2011

Thin film electrodes have been intensively studied for active materials and current collectors to enhance the electrochemical performance. Here, porous structures of nickel-based oxide films, consisting of nickel oxide and copper (II) oxide, which was derived from the copper substrate during the annealing process, were deposited on metallic copper foils. The half-cell tests revealed excellent capacity retention after $80^{th}$ charge/discharge cycles. Some films showed an excess of the theoretical capacity of nickel oxides, which mainly originate from partially oxidized copper substrates during annealing. These results exhibit that both a preparation method of an active materials and partially oxidized current collectors could be important roles to apply thin film electrodes.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.327-332
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• 2013

Nickel oxide films using RF sputter was formed on the $SiO_2/Si$ substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about $34.25{\Omega}{\cdot}cm$. And it was reduced to $18.65{\Omega}{\cdot}cm$ according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of $34.25{\Omega}{\cdot}cm$ was $-2.01%/^{\circ}C$. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.614-619
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• 2002

For an accurate measurement of the material behavior of small structures, a new optical experimental technique is proposed to measure the deformation. The test method uses the dual microscope that can measure the relative deformation of two adjacent regions. The magnified view is captured by CCD cameras and the relative deformation can be measured by the pattern matching and tracing method. Using this experimental technique, the deformation of solder joints in electronic packaging and the strain of the nickel thin film are measured.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.102-119
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• 2022

Gold plating is used as a coating of connecter in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. As increasing the demand for miniaturization of printed circuit boards and downsizing of electronic devices, several types of electroless gold plating solutions have been developed. Most of these conventional gold plating solutions contain cyanide compounds as a complexing agent. The gold film obtained from such baths usually satisfies the requirements for electronic parts mentioned above. However, cyanide bath is highly toxic and it always has some possibility to cause serious problems in working environment or other administrative aspects. The object of this investigation was to develop a cyanide-free electroless gold plating process that assures the high stability of the solution and gives the excellent solderability of the deposited film. The investigation reported herein is intended to establish plating bath composition and plating conditions for electroless gold plating, with thiomalic acid as a complexing agent. At the same time, we have investigated the solution stability against nickel ion and pull strength of solder ball. Furthermore, by examining the characteristics of the plated Au plating film, the problems of the newly developed electroless Au plating solution were improved and the applicability to various industrial fields was examined. New type electroless gold-plating bath which containing thiomalic acid as a complexing agent showing so good solution stability and film properties as cyanide bath. And this bath shows the excellent stability even if the dissolved nickel ion was added from under coated nickel film, which can be used at the neutral pH range.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.175-183
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• 2002

In this paper, the surface modification effect of self-assembled monolayer(SAM) of 1-dodecanethiol [$CH_3$($CH_2$)$_{11}$SH] used as an anti-adhesive film in micromolding process was studied. Monolayers of 1-dodecanethiol[$CH_3$(CH$_2$)$_{11}$SH] were obtained by immersing a metal place in pure 1-dodecanethiol. SAM film on the nickel plate has been examined by using X-ray photoelectron spectroscopy(XPS). The focus has been placed on S-Ni bonding. From the XPS analysis, sulfur atoms were detected from the SAM film as a chemical composition of S-Ni. In order to measure an adhesion force of the SAM-coated nickel surface, atomic force microscopy(AFM) was used in force-distance mode, which whows the micro-adhesive force on solid surface. It was shown that adhesion forces measured from the SAM-coated nickel surface and the Ni surface without SAM coating were 3.52nN and 5.32nN, respectively. In order to investigate the effect of SAM coating on the surface foughness the replica in demolding process, hot embossing experiments were performed using a SAM-coated nickel master and a nickel master without SAM coating. Surface roughness of replica from the SAM-coated master showed 25nm and that of replica from master without SAM coating was 35nm. The smoother surface roughness of the replica from the SAM-coated, master is believed to result from reduction in the adhesion forces.ces.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.372-376
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• 1999

The deposited Cu film on the ferrite magnet was more deposited comparing with that on the plastic magnet. The Cu film became thicker on the S pole comparing with that on the N pole in the both of magnets. The thickness and texture coefficient of deposited copper film affected with direction of line of magnetic force. The difference of pole had little or no effect to the texture coefficient of deposited nickel film. The reaction rate on ferrite magnet and S pole was faster comparing with that on plastic magnet and N pole.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.720-723
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• 1996

The behavior of electrodeposition of amorphous nickel-phosphorus has been studied from the point of deposition mechanism, kinetic parameters, morphology and formation of alloy films. The electorode reaction and electrode kinetics of deposition of nickel were significantly influenced by the content of phosphorus. The cathodic deposition of nickel-phosphorus alloy might be governed by the diffusion process of phosphorous acid. The direction of growth layer of the nickel-phosphorus alloy was different with substrate material. The formation of nickel-phosphorus alloy films was affected considerably by the solution compositions, electrolytic conditions and properties of the material as an underlayer.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.110-114
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• 2007

Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.