• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.193-198
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• 2002

In 1his paper, applicability of laser welding to joining process of single crystal nickel base superalloy turbine blades was investigated. Because heat input of laser welding is more precisely controlled 1han TIG welding, it is possible to optimize solidification microstructure of the welds. Since in single crystal nickel base superalloy the crystal orientation have a significant effect on the strength, it is important to control the solidification microstructure in the fusion zone. A single crystal nickel base supera1loy, CMSX-4, plates were bead-on welded and butt welded using a $CO_2$ laser. The effects of microstructure and crystal orientation on properties of the weld joints were investigated. In bead-on weldling, welding directions were deviated from the base metal [100] direction by 0, 5, 15 and 30 degrees. The welds with deviation angles of 15 and 30 degrees showed fusion zone transverse cracks. As the deviation angles became larger, the fusion zone had more cracking. In the cross section microstructure, the fusion zone grains in 0 and 5 degrees welds grew epitaxially from the base metal spins except for the bead neck regions. The grains in the bead neck regions contained stray crystals. As deviation angles increased, number of the stray crystals increased. In butt welding, the declinations of the crystal orientation of the two base metals varied 0, 5 and 10 degrees. All beads had no cracks. In the 5 degrees bead, the cross section and surface microstructures showed that the fusion zone grains grew epitaxially from the base metal grains. However, the 10 degrees bead, the bead cross section and surface contained the stray crystals in the center of the welds. Orientations of the stray crystals accorded with the heat flow directions in the weld pool. When the welding direction was deviated from the base metal [100] direction, cracks appeared in the area including the stray crystals. The cracks developed along the grain boundaries of the stray crystals with high angles in the final solidification regions at the center of the welds. The fracture surfaces were covered with liquid film. The cracks, therefore, found to be solidification cracks due to the presence of low melting eutectic. As the results, in both bead-on welding and butt welding the deviation angles should be control within 5 degrees for preventing the fusion zone cracks. To investigate the mechanical properties of the weld joints, high temperature tensile tests for bead-on welds with deviation angles of 0 and 5 degrees and the butt welds with dec1ination angles of 0, 5 and 10 degrees were conducted at 1123K. The the tensile strength of all weld joints were more 1han 800MPa that is almost 80% of the tensile strength of the base metal. The strength of the laser weld joints were more than twice that of tue TIG weld joints with a filler metal of Inconel 625. The results reveals 1hat laser welding is more effective joining process for single crystal nickelbase superalloy turbine blades 1han TIG welding.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• 전기화학회지
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• 제15권4호
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• pp.256-263
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• 2012

본 연구에서는 전기화학적 이온교환체 중의 하나인 nickel hexacyanoferrate($KNiFe(CN)_6$) 막 전극을 사용하여 세슘 양이온을 분리하는 실험을 수행하였다. 1.0M $NaNO_3$와 1.0M $CsNO_3$의 단일성분계 및 이성분계 수용액에서 순환전위곡선을 측정하여 전극전위, 전류, 전기량의 변화 거동을 조사하였으며, 실험 전과 후에 $KNiFe(CN)_6$ 막의 구조 형태와 원자조성의 변화를 각각 SEM과 EDS 분석을 통하여 조사하였다. 또한 나트륨과 세슘 용액에서 교대로 이온교환 반응을 수행하여 측정한 순환전위곡선과 원자조성으로부터 $KNiFe(CN)_6$의 이온 선택성을 조사하였다. 본 연구의 실험 결과에 의하면, 전기를 인가한 $KNiFe(CN)_6$ 이온교환체는 화학적 유 무기물 이온교환체에 비해 약 40배 이상의 우수한 내구성을 가짐을 알 수 있었다. 또한 $KNiFe(CN)_6$ 이온교환체는 나트륨보다 세슘에 대해 보다 높은 선택도를 가짐을 확인할 수 있었다.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Composites Research
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• 제29권4호
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• pp.151-155
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• 2016

그래핀은 저차원 구조에서 기인하는 우수한 특성으로 인해 슈퍼커패시터의 전극소재로 응용이 가능한 소재이다. 본 연구에서는 2차원 구조인 그래핀의 비 표면적 향상을 위해 다공성 니켈 나노구조체 표면에 열 화학기상증착법과 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 3차원의 그래핀을 합성하였다. 주사전자현미경, 라만 분광법, X-선 광전자 분광법을 통해 합성된 그래핀의 구조적, 화학적 특성을 분석한 결과, 3차원 구조의 우수한 결정성을 지니는 다중층 그래핀이 다양한 기판 위에 합성된 것을 확인할 수 있었다.

• Smart Structures and Systems
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• 제26권4호
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• pp.507-520
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• 2020

In order to achieve effective corrosion monitoring of buried metal pipelines, a Novel nondestructive Testing (NDT) methodology using ultra-long (250 mm) Polymer Optical Fiber (POF) sensors coated with the Fe-C alloy film is proposed in this study. The theoretical principle is investigated to clarify the monitoring mechanism of this method, and the detailed fabrication process of this novel POF sensor is presented. To validate the feasibility of this novel POF sensor, exploratory research of the proposed method was performed using simulated corrosion tests. For simplicity, the geometric shape of the buried pipeline was simulated as a round hot-rolled plain steel bar. A thin nickel layer was applied as the inner plated layer, and the Fe-C alloy film was coated using an electroless plating technique to precisely control the thickness of the alloy film. In the end, systematic sensitivity analysis on corrosion severity was further performed with experimental studies on three sensors fabricated with different metal layer thicknesses of 25 ㎛, 30 ㎛ and 35 ㎛. The experimental observation demonstrated that the sensor coated with 25 ㎛ Fe-C alloy film presented the highest effectiveness with the corrosion sensitivity of 0.3364 mV/g at Δm = 9.32 × 10^-4 g in Stage I and 0.0121 mV/g in Stage III. The research findings indicate that the detection accuracy of the novel POF sensor proposed in this study is satisfying. Moreover, the simple fabrication of the high-sensitivity sensor makes it cost-effective and suitable for the on-site corrosion monitoring of buried metal pipelines.