• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.226-226
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• 2012

The electronic and electrical properties of nickel oxide (NiO) thin films were investigated by reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and Hall Effect measurements. REELS spectra revealed that the band gap of the NiO thin film was increased from 3.50 eV to 4.02 eV after annealing the sample at $800^{\circ}C$. Our XPS spectra showed that the amount of Ni2O3 decreased after annealing. The Hall Effect results showed that the doping type of the sample changed from n type to p type after annealing. The resistivity decreased drastically from $4.6{\times}10^3$ to $3.5{\times}10^{-2}$ ${\Omega}{\cdot}cm$. The mobility of NiO thin films was changed form $3.29{\times}10^3$ to $3.09{\times}10^5cm^2/V{\cdot}s$. Our results showed that the annealing temperature plays a crucial role in increasing the carrier concentration and the mobility which leads to lowering resistivity of NiO thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• 한국결정학회지
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• 제12권1호
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• pp.20-24
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• 2001

NiZn-ferrite was synthesized usign waste iron oxide catalysts which were produced from styrene monomer process and buried underground as an industrial wastes. The spinel type ferrite was obtained by calcination and sintering of the mixture of finely ground waste catalysts, nickel oxide and zinc oxide powders. The sintered body of Ni/sub 0.5/Zn/sub 0.5/Fe₂O₄ composition at 1230℃ for 5 hours showed the density of 5.38g/㎤, and initial permeability of 59 at 1 kHz. Not only cerium oxide, which existed as a major component in the catalyst, but also unicorporated NiO and ZnO into spinel structure remained as second phases after sintering.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.418-421
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• 2023

Multilayer Ceramic Capacitors (MLCCs) are essential passive components in the electronics industry, known for their high capacitance due to the multilayer structure comprising inner electrodes and dielectric layers. Nickel electrodes are commonly used in MLCCs as the inner electrodes, and to prevent oxidation during the co-firing of the dielectric layers with nickel electrodes, reducing atmosphere is required. However, reducing atmosphere sintering can also induce a reduction of the dielectric, necessitating precise control of oxygen partial pressure. To explore the possibility of using oxide electrodes that do not require reducing atmosphere sintering, we analyze the electrical properties of nickel oxide (NiO) as a potential candidate. As a preliminary study on its use as an alternative inner electrode, the correlation between microstructure and electrical properties of bulk NiO under different sintering conditions was investigated to gain insights into the conduction mechanisms of the material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1535-1537
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• 2003

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

• 한국표면공학회지
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• 제46권6호
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• pp.235-241
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• 2013

In this study, the effects of alloying elements and thermal aging on the contact resistance of electroplated gold alloy layers were investigated by surface analysis using X-ray photoelectron spectroscopy (XPS). The contact resistance of Au-Ag alloy was lower than that of Au-Ni or Au-Co alloy after thermal aging. The XPS results show that nickel and oxygen present as nickel oxides such as NiO and $Ni_2O_3$ on the surface of gold layers after thermal aging. The increase in the contact resistance after thermal aging is attributable to the nickel oxide layer formed on the surface of the gold layers. The content of nickel diffused from the underlayer during the thermal aging was high in the order of Au-Co, Au-Ni and Au-Ag alloy because the area of grain boundary was large in the order of Au-Ag, Au-Ni and Au-Co alloy.

• 한국재료학회지
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• 제22권11호
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.156.1-156.1
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• 2016

Nickel sulfide (NiS) is one of the most promising candidates as an electrode material for supercapacitors due to its good capacitive properties, high electrical conductivity and low cost. In addition to the development of the new electrode materials, nanostructuring the electrode surface is one of the main issues in enhancing the capacitive performance of the supercapacitors because the increased surface area can improve the charge transfer and energy storage processes occurring at the electrode surface. However, most nanofabrication techniques require complicated and delicate nanoprocesses, and hence are not suitable for practical use. In this work, we developed a simple method to fabricate nanostructured NiS electrodes by depositing NiS onto $TiO_2$ nanoparticles. First, $TiO_2$ nanoparticles were spin-coated on a fluorine-doped tin oxide (FTO) substrate, and then NiS layers were deposited onto the $TiO_2$ nanoparticles by consecutive dip-coatings in the solutions containing nickel and sulfur precursors. This nanostructured NiS electrode showed significantly improved capacitive properties compared to the electrode of NiS films deposited without $TiO_2$ nanoparticles. The asymmetric full-cell supercapacitor with this nanostructured NiS electrode and activated carbon electrode was also fabricated and investigated.

• 한국표면공학회지
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• 제50권6호
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• pp.486-491
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• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• 한국세라믹학회지
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• 제23권6호
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.