Effect of Ni addition on anodically deposited $MnO_2$ film

Anodic deposition된 $MnO_2$ 막에 있어서 Ni 첨가 영향

  • 김봉서 (한국전기연구원 신소재 응용그룹) ;
  • 이동윤 (한국전기연구원 신소재 응용그룹) ;
  • 이희웅 (한국전기연구원 신소재 응용그룹) ;
  • 정원섭 (부산대학교 금속공학과)
  • Published : 2003.07.21

Abstract

Manganese oxide electrode was designed to improve electrical conductivity for dimensionally stable anode(DSA) using discreet variation (DV)-X${\alpha}$ method. It was calculated in DV-X${\alpha}$ method that the addition of nickel to manganese oxide reduce the energy band gap of manganese oxide electrode. Therefore, it is estimated that nickel in 3 additive elements of Ti, Ni and Sn is the best candidate to improve the electrical conductivity of manganese oxide. The anodically deposited manganese oxide which was produced in 0.2M $MnSO_4$ and 0.2M (Mn,Ni)$SO_4$ solution had $MnSO_4$ structure which was identified by XRD. The $MnSO_4$ films produced in both solutions over than 50mA/$cm^2$ of current density and long deposition time of 600sec showed low adhesion with Ti substrate.

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