• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.372-376
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• 1999

The deposited Cu film on the ferrite magnet was more deposited comparing with that on the plastic magnet. The Cu film became thicker on the S pole comparing with that on the N pole in the both of magnets. The thickness and texture coefficient of deposited copper film affected with direction of line of magnetic force. The difference of pole had little or no effect to the texture coefficient of deposited nickel film. The reaction rate on ferrite magnet and S pole was faster comparing with that on plastic magnet and N pole.

• Current Applied Physics
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• v.18 no.11
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• pp.1345-1351
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• 2018

To allow stable cycling of layered nickel-rich cathode material at high voltage, silyl-functionalized dimethoxydimethylsilane is proposed as a multi-functional additive. In contrast to typical functional additive, dimethoxydimethylsilane does not make artificial cathode-electrolyte interfaces by electrochemical oxidation because it is quite stable under anodic polarization. We find that dimethoxydimethylsilane mainly focuses on scavenging nucleophilic fluoride species that can be produced by electrolyte decomposition during cycling, leading to improving interfacial stability of both nickel-rich cathode and graphite anode. As a result, the cell cycled with dimethoxydimethylsilane-controlled electrolyte exhibits 65.7% of retention after 100 cycle, which is identified by systematic spectroscopic analyses for the cycled cell.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.55-62
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• 2023

In this study, Sn-3.0Ag-0.5Cu (wt.%, SAC305) solder dipping process was performed between Ni-foam skeleton with different pore per inch (PPI) to fabricate Ni-foam/SAC305 composite solder, and then applied to the transient liquid phase (TLP) bonding process to evaluate the microstructure and mechanical properties of the bonded joint. The Ni-foam/SAC305 composite solder preform consisted of Ni-foam and SAC305, and an intermetallic compound (IMC) having a (Ni,Cu)₃Sn₄ composition was formed at the Ni-foam interface. During TLP bonding process, the IMC at the Ni-foam interface was converted to (Ni,Cu)₃Sn₄+Au, and as the bonding time increased, the Ni-foam and SAC305 continuously reacted, and the bonded joint was converted into an IMC. And it was confirmed that the 130 PPI Ni-foam/SAC305 composite solder joint was converted into an IMC at the fastest rate. As a result of performing a shear test to confirm the effect of Ni-foam on mechanical properties, solder joints under all conditions exhibited excellent mechanical properties of 50 MPa or more in the early stages of the TLP bonding process, and the shear strength tends to increase as the bonding time increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.201.2-201.2
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• 2015

현대 디지털 사회에서 고효율 에너지와 파워소스에 관한 요구가 커짐에 따라 차세대 에너지 저장 소자에 대한 연구가 계속되고 있다. 그 중 리튬이온 배터리, 슈퍼커패시터, 그리고 연료 전지들이 우리의 일상생활에서 점점 더 중요하게 자리잡아가고 있는데 이런 다양한 에너지 저장소자 중 슈퍼커패시터가 많은 관심을 받고 있다. 이는 긴 수명, 빠른 충-방전 속도, 높은 에너지 밀도, 그리고 안전함 때문이다. 슈퍼커패시터는 에너지 저장 메커니즘에 따라 두 가지로 분류될 수 있는데 전기이중층 커패시터(EDLC)와 슈도커패시터(pseudocapacitor)로 나누어질 수 있다. 슈도커패시터는 active 물질과 전해질 이온 간의 전기화학적 반응으로 인해 EDLC보다 더 많은 에너지를 저장할 수 있다. 그러므로 지금까지 새로운 형태의 슈도용량성 물질을 만들기 위한 노력이 집중되고 있다. 본 연구에서는 전기화학적증착 방법을 통해 graphene-like ${\beta}$-nickel hydroxide (${\beta}-Ni(OH)_2$) 나노판 구조를 전도성 직물에 합성하였다. ${\beta}-Ni(OH)_2$ 슈도커패시터의 유연하고 효율적인 비용의 전극으로서 높은 비정전용량, 우수한 전기화학 가역성, 그리고 뛰어난 사이클 안정성을 보였다. 이런 쉬운 방법으로 유연한 전도성 직물에 합성된 metal hydroxide/oxide 나노구조는 웨어러블 에너지 저장소자와 변환소자 분야에 사용될 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.247-250
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• 2008

Biomass gasification is a promising technology for producing a fuel gas which is useful for power generation systems. In biomass gasification processes, tar formation often causes some problems such as pipeline plugging. Thus, proper tar treatment is necessary. So far, nickel (Ni)-based catalysts have been intensively studied for the catalytic tar removal. However, the deactivation of Ni-based catalysts takes place because of coke deposition and sintering of Ni metal particles. To overcome these problems, we have been using ruthenium (Ru)-based catalyst for tar removal. It is reported by Okada et al., that a Ru/$Al_2O_3$ catalyst is very effective for preventing the carbon deposition during the steam reforming of hydrocarbons. Also, this catalyst is more active than the Ni-based catalyst at a low steam to carbon ratio (S/C). Benzene was used for the tar model compound because it is the main constituent of biomass tar and also because it represents a stable aromatic structure apparent in tar formed in biomass gasification processes. The steam reforming process transforms hydrocarbons into gaseous mixtures constituted of carbon dioxide ($CO_2$), carbon monoxide (CO), methane ($CH_4$) and hydrogen ($H_2$).

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

• Journal of Powder Materials
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• v.27 no.1
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• pp.1-7
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• 2020

In this research, a new medium-entropy alloy with an equiatomic composition of FeCuNi was designed using a phase diagram (CALPHAD) technique. The FeCuNi MEA was produced from pure iron, copper, and nickel powders through mechanical alloying. The alloy powders were consolidated via a high-pressure torsion process to obtain a rigid bulk specimen. Subsequently, annealing treatment at different conditions was conducted on the four turn HPT-processed specimen. The microstructural analysis indicates that an ultrafine-grained microstructure is achieved after post-HPT annealing, and microstructural evolutions at various stages of processing were consistent with the thermodynamic calculations. The results indicate that the post-HPT-annealed microstructure consists of a dual-phase structure with two FCC phases: one rich in Cu and the other rich in Fe and Ni. The kernel average misorientation value decreases with the increase in the annealing time and temperature, indicating the recovery of HPT-induced dislocations.

• 연구논문집
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• s.27
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• pp.201-208
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• 1997

To improve the joining characteristics of metallic converter substrate for exhaust gas cleaning, high temperature brazing process has been studied. In this study, the effect of chemical composition of brazing filler metal on the oxidation behavior of brazed joints was investigated closely. Brazing was carried out at $1200^\circC$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si base alloy) and MBF-50 foil(Ni-Cr-Si-B). The MBF-50 containing 1-1.5 wt%B showed relatively poor oxidation resistance of the brazed joints compared to BNi-5, because of the faster invasion of oxygen through the Kirkendal voids along the interface of mother alloy/filler metal.