• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.472-477
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• 2000

Oxides of the form Mn$_{4}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO present properties that make them useful as power NTC thermistor for current limited. Electrical properties of Mn$_{3}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO power NTC thermistor such as I-V characteristics tim constant activation energy and heat dissipation coefficient measured as a function of temperature and composition. In Mn$_{4}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO system with the 5wt% addition of Co$_{3}$/O$_{4}$ it can be seen that resistivity and B-constant were increased as the ratio of ZnO/Mn$_{3}$/O$_{4}$ was increased. Heat dissipation constant, I-V characteristics and time constant showed similar behaviour compared with those of conventional thermistors. In particular resistance change ratio ($\Delta$R) the important factor for reliability varied within $\pm$5% indicating the compositions of these products could be available for power thermistor.

• 한국진공학회지
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• 제12권4호
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• 한국수소및신에너지학회논문집
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• 제16권2호
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• pp.142-149
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• 2005

[ $LiNiO_2$ ] was mixed with $TiO_2$ or ZnO for the preparation of a cathode. The electrochemical properties of the cathode were investigated and the effects of the addition of $TiO_2$ or ZnO were discussed. The first discharge capacity decreased as the quantity of the added $TiO_2$ or ZnO increased. It is probably due to the decrease in the area of reaction interface according to the increase in the amount of the added oxide. When 2wt.% and 5wt.% of oxides are added, the discharge capacity increased as the number of cycles increased. It is considered that this results from the increase in the area of reaction interface because the oxide is detached from the $LiNiO_2$ with the increase in the number of cycles. The 1wt.% $TiO_2$ or ZnO-added $LiNiO_2$ had a larger first charge capacity than $LiNiO_2$. This is considered to result from the deintercalation of Li ions in the Ni sites along with the Li ions in the Li sites.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.387-392
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• 2017

A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

• 한국세라믹학회지
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• 제30권8호
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.569-572
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• 2003

전력선 통신용 LC 공진필터에 사용되는 Ni-Zn 페라이트를 제조하기 위해 Ni0.8Zn0.2Fe2O4를 기본조성으로 선택하고 x (Co mol 비)를 변화시켜 전자기적 특성을 조사하였다. $Bi_2O_3$ CaO가 첨가됨으로써 균일한 입자성장과 입계에 고저항층이 형성되어 주파수 손실이 감소하였으며, $Ni_{0.8-x}Zn_{0.2}Co_xFe_2O_{\delta}$의 기본조성에 Co의 함량을 증가시키면 x = 0.05에서 투자율 75, 공진주파수 20 MHz의 특성을 나타내고 결정 입자 크기와 같은 구조적 특성에는 영향을 거의 미치지 않지만 자기이방성 변화에 따라 전자기적 특성에는 영향을 미친다. 또한, $Ni_{0.75}Zn_{0.2}Co_{0.05}Fe_2O_{4.017}$ 조성의 페라이트 코어의 발열량은 큐리온도 이하에서 일어난다.

• 자원리싸이클링
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• 제13권6호
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• pp.37-42
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• 2004

NiO, ZnO 조성이 다른 Ni-Cu-Zn 페라이트의 손실 분석을 실시했다. 손실, Ph는 측정 온도의 상승에 따라 감소해 100-120$^{\circ}C$ 근처에서 일정한 값을 얻었다. Pcv의 주파수의존성은 Pcv~f$^n$ 로 표현될 수 있는데, n은 1 MHz까지 일정했다. Pcv는 ZnO/NiO비가 증가함에 따라 감소한다. Pcv를 Hysteresis loss(Ph) 및 잔류손실(Pcv-Ph)로 분리했다. Pcv의 온도특성 및 조성 의존성은 Ph에 기인하지만, Pcv-Ph는 온도 및 조성에 의존하지 않는다. Ph와 초투자율, ${\mu}_i$의 온도 및 조성 의존성을 분석해, 다음과 같은 식이 성립된다는 것을 알 수 있었다. ${\mu}_i{\mu}_0=I_s^2/(K_I+b{\sigma}_0{\lambda}_s)$ Wh=13.5(I$_s^2/{\mu}_i{\mu}_0)$ 여기서, ${\mu}_0$은 진공의 투자율, I$_s$는 포화자화, K$_I$는 이방성상수, ${\sigma}_0$는 내부 불균일 응력, ${\lambda}_s$는 자기이방성 상수, b는 미지의 상수, Wh는 1주기 당의 히스테리시스 손실(Ph=Wh${\times}$f)이다. Ni-Cu-Zn 페라이트의 Steinmetz 상수 m=1.64~2.2는 Mn-Zn 페라이트보다는 적은데, 이는 양 재료 간의 손실 메커니즘의 차가 있음을 암시하는 것이다.

• 한국세라믹학회지
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• 제41권8호
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• pp.605-609
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• 2004

다양한 금속산화물(NiO, MgO, Cr$_2$O$_3$) 첨가에 따른 ZnO 바리스터의 미세구조, 전기적, 유전적 특성을 조사하였다. 평균 결정립 크기는 NiO 첨가로 증가한 반면 Cr$_2$O$_3$ 첨가로 감소하였다 이로 인해 바리스터 전압은Cr$_2$O$_3$ 첨가시 더 높게 나타났다. 바리스터 가운데서 Cr$_2$O$_3$가 첨가된 바리스터가 비직선 지수가 40.5, 누설전류가 2.7 $\mu$A로 가장 우수한 비직선성을 나타내었으며, 유전손실도 0.0589로 비교적 낮게 나타났다.

• 대한화학회지
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• 제18권3호
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• pp.189-193
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• 1974

세자리 schiff base 리간드로서 salicylidene imino-o-thiobenzene은 salicylaldehyde와 o-aminothiolbenzene을 Duff reaction 시킴으로써 합성하였으며 이 리간드와 Cu(II), Ni(II), 및 Zn(II) 이온들과의 반응으로서 새로운 착물 Cu(II)$[C_{13}H_9ONS]{\cdot}3H_2O$, 및 Ni(II)$[C_{13}H_9ONS]{\cdot}3H_2O,\;Zn(II)[C_{13}H_9ONS]{\cdot}3H_2O$들을 합성하였다. 이 착물들은 가시부 자외선스펙트럼, 적외선스펙트럼, TGA, DTA 및 원소분석측정에 의하여 리간드와 금속은 1:1 몰비로 착물을 이루며 Cu(II) 착물은 1수화물 4배위 결합착물이고 Ni(II), 및 Zn(II) 착물은 3수화물, 6배위 결합의 착물임을 알아보았다.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.