• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.749-756
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• 1998

TiC-Ni and TiC-Ni-Mo cermet powders were produced by Self-propagating High temperature Synthesis (SHS) process. The cooling rate of synthesized powders were controlled by using the V-shaped copper jig and the carbide size decreased with increasing the cooling rate I. e decreasing the width of copper jig Round shape carbide particles were produced after SHS reaction in TiC-Ni as well as TiC-Ni-Mo powders. Local segregation of Mo rich phases was observed in SHS powder of TiC-Ni-Mo and the uneven dis-triobution of Mo promoted the faster growth rate of carbide particles during sintering compared to the same composition specimen with commercial TiC powder. Howogeneous microstructure of TiC-Ni-Mo cermet was obtained when the elemental Mo powder was mixed with the SHS powder of TiC-Ni.

• Journal of Korea Foundry Society
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• v.20 no.1
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• pp.21-28
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• 2000

Ni and Ni-Cr porous metals which are estimated to be easy to fabricate by squeeze casting are used as strengtheners for composite materials. As a matrix material, Al-7%wtSi-0.3 wt%Mg(AC4C) has been used. In case of Ni/AC4C and Ni-Cr/AC4C composite, $750^{\circ}C$ melt temperature and minimum 25 MPa squeezing pressure are needed to produce sound composite materials. The observation of interfacial reaction zone at various heat treatment condition showed that solutionizing temperature of above 520^{\circ}C$, the interfacial reaction zone increased proportionally with increasing heat treatment tim and reaction products formed by interfacial reaction are mainly composed of $Al_3Ni$ and $Al_3Ni_2$ phases. The tensile strength of Ni/AC4C and Ni-Cr/AC4C composite is lower than the matrix metal and this can be explained by the brittle intermetallic compounds formed at the interface of Ni and Ni-Cr reinforcements. But the properies of hardness, wear resistance and thermal expansion are better than the matrix due to the strengthening effect of Ni-Cr porous metals.

• Journal of Korea Foundry Society
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• v.25 no.2
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• pp.80-87
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• 2005

The microstructure and mechanical property of the Ni and Ni-Cr porous metal reinforced AC4C matrix composites fabricated by squeeze casting were investigated. In this study Ni, Ni-Cr porous metals which are estimated to be easy to fabricate by squeeze casting are used as strengtheners for composite materials. As a matrix material, Al-7wt.%Si-0.3wt.%Mg(AC4C) has been used. In case of Ni/AC4C and Ni-Cr/AC4C composite, $750^{\circ}C$ melt temperature and minimum 25MPa squeezing pressure are needed to produce sound composite materials. The observation of interfacial reaction zone at various heat treatment condition shows that atsolutionizing temperature of above $520^{\circ}C$, the interfacial reaction zone increases proportionally with heat treatment time and the reaction products formed by interfacial reactions are mainly composed by $Al_{3}Ni$ and $Al_{3}Ni_{2}$ phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.493-496
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• 1999

Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300$\AA$)을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$, 80$0^{\circ}C$, 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500 $^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500 $^{\circ}C$ 이상에서는 NiSi$_2$silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.288-294
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• 2011

Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosion resistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carbon content in the Ni-C composite plate fell in a range of 9.2~26.2 at.% as the amount of carbon in the Ni Watt bath and the roughness of the composite were increased. The Ni-C composite with more than 21.6 at.% C content did not show uniformly dispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion. The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results such as passivation were not satisfactory; however, the Ni-C composite still displayed less than $10^{-4}$ $A/cm^2$ passivation current density. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching that of pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On the other hand, the surface resistivity of the Ni-C composite with 13 at.% C content was increased by only 1%. It can be confirmed that the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2431-2437
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• 2014

In this study, Ni, Ni-Cu and Ni/Cu catalysts were deposited onto C-fiber textiles via the electrophoretic deposition method, and the growth characteristics of carbon nanofibers on the deposited catalyst/C-fiber textiles were investigated. The catalyst deposition onto C-fiber textiles was accomplished by immersing the C-fiber textiles into Ni or Ni-Cu mixed solutions, producing the substrate by post-deposition of Ni onto C-fiber textiles with pre-deposited Cu, and passing it through a gas mixture of $N_2$, $H_2$ and $C_2H_4$ at $700^{\circ}C$ to synthesize carbon nanofibers. For analysis of the characteristics of the synthesized carbon nanofibers and the deposition pattern of catalysts, SEM, EDS, BET, XRD, Raman and XPS analysis were conducted. It was found that the amount of catalyst deposited and the ratio of Ni deposition in the Ni-Cu mixed solution increased with an increasing voltage for electrophoretic deposition. In the case of post-deposition of Ni catalyst onto substrates with pre-deposited Cu, both bimetallic catalyst and carbon nanofibers with a high level of crystallizability were produced. Carbon nanofibers yielded with the catalyst prepared in Ni and Ni-Cu mixed solutions showed a Y-shaped morphology.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.5
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• pp.361-370
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• 2009

Ni-PTFE composite plated on graphite (C/Ni-PTFE) and PTFE (PTFE/Ni-PTFE) particles were prepared uniformly by electroless composite plating. The conductivity of C/Ni-PTFE particles was 280 S/m higher than 95 S/m of PTFE/Ni-PTFE particles at same composite plating condition (Ni:35~36 wt%, PTFE:8 wt%). The C/Ni-PTFE particles were formed into the C/Ni-PTFE plate using heat treatment at $350^{\circ}C$ under 10~$1000\;kg/cm^2$. The C/Ni-PTFE plate showed 1) high conductivity of $5.7\;{\times}\;10^4\;S/m$ due to the existence of graphite as conducting aid and the formation of 3-dimensional Ni network 2) good gas diffusion caused by various pore volumes (0.01~$100\;{\mu}m$) in the plate. The plate could be useful for an electrode in an alkaline fuel cell (AFC). The current density of C/Ni-PTFE electrode indicated $84\;mA/cm^2$ at 0.3V and it was 3.0 times higher than that of PTFE/Ni-PTFE electrode.