• Resources Recycling
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• v.13 no.2
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• pp.3-8
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• 2004

A basic study on the recovery of heavy metals such as Zn, Ni, Cu and Fe ions from wastewater was carried out with the spent iron oxide catalyst, which was used in the Styrene Monomer(SM) production company. The heavy metals could be recovered more than 98％ with the spent iron oxide catalyst. The alkaline components of the spent catalyst could be precipitated the metal ions of the wastewater as metal hydroxides at the higher pH 10.6 in Ni, pH 8.0 in Cu, pH 6.5 in Fe, pH 8.5 in Zn. But the metal ions are adsorbed physically on the surface of the spent catalyst in the range of the pH of the metal hydroxides and pH 3.0, which is the isoelectric point of the iron oxide catalyst.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.178-184
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• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.151-153
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• 2015

무전해도금법을 이용하여 Ag/Ni 코팅 Cu 플레이크를 제조한 후 Ni 코팅층의 P 함량에 따른 Ag dewtting 거동에 대한 연구를 수행하였다. Ni 코팅층 내 P 함량이 낮을수록 Ni 코팅층의 결정성 및 결정화 속도가 높아지는 것을 알 수 있었으며, 이는 Ni 코팅층 위에 형성된 Ag 코팅층의 dewetting 거동에 영향을 주는 것으로 분석되었다. 또한 격자 불일치도가 높을수록 잘 발생하는 dewetting 현상은 P 함량이 높아 결정성이 떨어지는 Ni 코팅층에서 더욱 빨리 일어남을 알 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.55-59
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• 2013

Mold die sticking arises from silica filler abrasion to the cavity surface. Ni-P electroplating was examined to substitute conventional hard Cr plating. More than 4% of Phosphorus in the electroplated film produces nano crystal structure and annealing makes $Ni_3P$ precipitated to get hardness values equivalent to hard Cr.

• Journal of the Korean Chemical Society
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• v.58 no.1
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• pp.9-16
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• 2014

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on nickel were investigated, using the potentiodynamic method, chronoamperometry, and single- or multi-frequency electrochemical impedance spectroscopy. The oxide film formed during the passivation process of nickel has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film ($Ni(OH)_2$) of Ni formed in the low electrode potential changes to NiO and NiO(OH) while the electrode potential increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.310-313
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• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.93-100
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• 2002

To better understand the codeposition mechanism of phosphorous, surface pH and potential of cathode were measured during electrodeposition of Ni-P alloys. The pH of cathode surface was measured using a flat-bottom glass pH electrode and a 500 mesh gold gauze as cathode. The cathode surface pH was increased with increasing the current density and always higher than the pH in the bulk solution. As a result of overplotting the surface pH and cathode potential on the Pourbaix diagram, it was found that cathode surface shift to the domain of predominant of $H_2$$PO3$-or $H_2$$PO_2$-. Additionally, new deposition mechanism was suggested that $H_2$ $PO_2$- and $H_2$$PO_3$- play important roles in the deposition reaction of Ni-P alloys.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.269-274
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• 2014

Electroless plating process as a solution deposition method is a viable means of preparing conductive metal films on non-conducting substrates through chemical reactions. In the present study, the preparation and properties of electroless Ni-plating on flexible silicone rubber are described. The process has been performed using a conventional Ni(P) chemical bath. Additives and complexing agents such as ammonium chloride and glycine were added and the reaction pH was controlled by NaOH aqueous solution. Ni deposition rate and crystallinity have been found to vary with pH and temperature of the plating bath. It was shown that Ni-films having the high crystallinity, enhanced adhesion and optimum electric conductivity were formed uniformly on silicone rubber substrates under pH 7 at $70^{\circ}C$. The conductive Ni-plated silicone rubber showed a high electromagnetic interference shielding effect in the 400 MHz-1 GHz range.