• Applied Chemistry for Engineering
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• v.28 no.1
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• pp.1-7
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• 2017

Polydimethylsiloxane (PDMS) can be deposited on various substrates using chemical vapor deposition process, which results in the formation of PDMS thin films with thickness below 5 nm. PDMS layers can be evenly deposited on surfaces of nanoparticles composed of various chemical compositions such as $SiO_2$, $TiO_2$, ZnO, C, Ni, and NiO, and the PDMS-coated surface becomes completely hydrophobic. These hydrophobic layers are highly resistant towards degradation under acidic and basic environments and UV-exposures. Nanoparticles coated with PDMS can be used in various environmental applications: hydrophobic silica nanoparticles can selectively interact with oil from oil/water mixture, suppressing fast diffusion of spill-oil on water and allowing more facile physical separation of spill-oil from the water. Upon heat-treatments of PDMS-coated $TiO_2$ under vacuum conditions, $TiO_2$ surface becomes completely hydrophilic, accompanying formation oxygen vacancies responsible for visible-light absorption. The post-annealed $PDMS-TiO_2$ shows enhanced photocatalytic activity with respect to the bare $TiO_2$ for decomposition of organic dyes in water under visible light illumination. We show that the simple PDMS-coating process presented here can be useful in a variety of field of environmental science and technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.641-643
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• 2003

The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.106-106
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• 2003

반도체 소자의 고집적화에 따라 채널길이와 배선선 폭은 점차 줄어들고, 이에 따라 단채널효과, 소스/드레인에서의 기생저항 증가 및 게이트에서의 RC 시간지연 증가 등의 문제가 야기되었다. 이를 해결하기 위하여 자기정렬 실리사이드화(SADS) 공정을 통해 TiSi2, CoSi2 같은 금속 실리사이드를 접촉 및 게이트 전극으로 사용하려는 노력이 진행되고 있다. 그런데 TiSi2는 면저항의 선폭의존성 때문에, 그리고 CoSi2는 실리사이드 형성시 과도한 Si소모로 인해 차세대 MOSFET소자에 적용하기에는 한계가 있다. 반면, NiSi는 이러한 문제점을 나타내지 않고 저온 공정이 가능한 재료이다. 그러나, NiSi는 실리사이드 형성시 NiSi/Si 계면의 산화와 거침성(roughness) 때문에 높은 누설 전류와 면저항값, 그리고 열적 불안정성을 나타낸다. 한편, 초고집적 소자의 배선재료로는 비저항이 낮고 electro- 및 stress-migration에 대한 저항성이 높은 Cu가 사용될 전망이다. 그러나, Cu는 Si, SiO2, 실리사이드로 확산·반응하여 소자의 열적, 전기적, 기계적 특성을 저하시킨다. 따라서 Cu를 배선재료로 사용하기 위해서는 확산방지막이 필요하며, 확산방지재료로는 Ti, TiN, Ta, TaN 등이 많이 연구되고 있다.

• Corrosion Science and Technology
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• v.15 no.3
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Journal of Environmental Science International
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• v.28 no.1
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• pp.65-73
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• 2019

The catalytic activity of Ni-0.2%YSZ (Yttria-Stabilized Zirconia) with different promoters was evaluated for $CO_2$ methanation. The catalysts were weighed for mixing and they were dried at $110^{\circ}C$ for molding into disks. The concentration of $CO_2$ and $CH_4$ for conducting of $CO_2$ methanation were analyzed by gas chromatography and the physical characteristics of the disk-type catalyst formed were analyzed by X-ray diffraction, scanning electron microscope and energy dispersive x-ray spectrometer. The addition of $CeO_2$ as a promoter for Ni-0.2%YSZ (denoted as Ni-5%Ce-0.2%YSZ) resulted in the highest $CO_2$ methanation. It also showed catalytic activity at a low temperature($200^{\circ}C$). Following this, $ZrO_2$, $SiO_2$, $Al_2O_3$ and $TiO_2$ were added to Ni-5%Ce-0.2%YSZ to compare the $CO_2$ methanation, and the highest efficiency was found for. Ni-1%Ti-5%Ce-0.2%YSZ Then, the concentration of Ti was increased to 10% and the catalytic activity was estimated using seven different types of commercial $TiO_2$. In conclusion, ST-01 $TiO_2$ showed the highest efficiency for $CO_2$ methanation.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Korean Journal of Materials Research
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• v.33 no.8
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• pp.330-336
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• 2023

The effects of Ni²⁺ substitution for Mg²⁺-sites on the microwave dielectric properties of (Mg_1-xNi_x)(Ti_0.95(Mg_1/3Ta_2/3)_0.05)O₃ (0.01 ≤ x ≤ 0.05) (MNTMT) ceramics were investigated. MNTMT ceramics were prepared by conventional solid-state reaction. When the MgO / TiO₂ ratio was changed from 1.00 to 1.02, MgTi₂O₅ was detected as a secondary phase along with the MgTiO₃ main phase in the MNTMT specimens sintered at 1,400 ℃ for 4h. For the MNTMT specimens with MgO / TiO₂ = 1.07 sintered at 1,400 ℃ for 4h, a single phase of MgTiO₃ with an ilmenite structure was obtained from the entire range of compositions. The relative density of all the specimens sintered at 1,400 ℃ for 4h was higher than 95 %. The quality factor (Qf) of the sintered specimens depended strongly on the degree of covalency of the specimens, and the sintered specimens with x = 0.01 showed the maximum Qf value of 489,400 GHz. The dielectric constant (K) decreased with increasing Ni²⁺ content because Ni²⁺ had a lower dielectric polarizability (1.23ų) than Mg²⁺ (1.32ų). As Ni²⁺ content increased, the temperature coefficient of resonant frequency (TCF) improved, from -55.56 to -21.85 ppm/℃, due to the increase in tolerance factor (t) and the lower dielectric constant (K).