• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.222-223
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, high electromechanical coupling coefficient(Kp) and high mechanical quality factor(Qm), however it shows the peeling-phenomenon of electrode, and high price due to high sintering temperature. Therefore this study focus on the method for fabrication of high power rosen type piezoelectric transformers. The composition of $0.01Pb(Ni_{1/3}Nb_{2/3)O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$-0.91Pb$(Zr_{0.505}Ti_{0.495})O_3$(abbreviated as PNN-PMN-PZT) ceramics is employed for this study.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.54-66
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• 2012

The phase-shift method and correlation constants, which are unique electrochemical impedance spectroscopy techniques for studying the linear relationship between the phase shift ($90^{\circ}{\geq}-{\varphi}{\geq}0^{\circ}$) vs. potential (E) behavior for the optimum intermediate frequency ($f_o$) and the fractional surface coverage ($0{\leq}{\theta}{\leq}1$) vs. E behavior, are proposed and verified to determine the Frumkin, Langmuir, and Temkin adsorption isotherms and the related electrode kinetic and thermodynamic parameters. At Ni/0.5 M $H_2SO_4$ and 0.1M LiOH aqueous solution interfaces, the Frumkin and Temkin adsorption isotherms (${\theta}$ vs. E) of H for the cathodic hydrogen ($H_2$) evolution, interaction parameters (g), equilibrium constants (K), standard Gibbs energies (${\Delta}G^0_{\theta}$) of H adsorption, and rates of change (r) of ${\Delta}G^0_{\theta}$ with ${\theta}$ have been determined using the phase-shift method and correlation constants. A lateral repulsive interaction (g>0) between the adsorbed H species appears. The value of K in the alkaline aqueous solution is much greater than that in the acidic aqueous solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.472.2-472.2
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• 2014

현재 결정질 실리콘 태양전지의 전 후면 전극의 형성은 스크린 프린팅 방법이 주를 이루고 있다. 스크린 프린팅 방법은 쉽고 빠르게 인쇄가 가능한 반면 단가가 높고 금속 페이스트에 첨가된 여러 혼합물에 의해서 전극과 기판 사이의 저항이 크다는 단점이 있다. 본 논문에서는 도금을 이용하여 태양전지의 전극을 형성한 후 태양전지의 전기적 특성을 비교하였다. 또한 단일반사방지막($SiN_x$) 증착 후 도금을 이용한 전극 형성 시 반사방지막의 pin-hole에 의해 전극 이외의 표면에 도금이 되는 ghost plating 현상이 발생하게 되는데, 이를 방지하기 위해 thermal oxidation을 이용하여 SiO2/SiNx 이중반사 방지막을 증착함으로써 ghost plating을 최소화 시켰다. Ni을 이용하여 전극과 기판 사이의 저항을 낮추었으며, 주요 전극은 Cu 도금을 사용함으로써 단가를 낮추었으며 마지막으로 Cu전극의 산화를 방지하기 위해 Ag을 이용하여 얇게 도금하였다. 실험에 사용된 Si 웨이퍼 특성은 p-형, $156{\times}156mm2$, $200{\mu}m$, $0.5{\sim}3.0{\Omega}{\cdot}cm$ 이다. 웨이퍼는 표면조직화, p-n접합 형성, 반사방지막 코팅을 하였으며 스크린 프린팅 방법을 이용해 후면 전극을 인쇄하고 열처리 과정을 통해 전극을 형성하였다. 이 후 전면에 레이저를 이용해 전극 패턴을 형성한 후 도금을 실행하여 태양전지를 완성하였다. 완성된 태양전지는 솔라 시뮬레이터, QE 및 TLM패턴을 이용하여 전기적 특성을 분석하였으며, SEM과 linescan, 광학현미경 등을 이용하여 전극을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.211-218
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• 2009

For the Y5V characteristic MLCC which is very prone to crack, it is important to to find out the basic cause of the crack. After finding out the crack origin, the materials and processes should be developed to remove the crack. The microstructures of the cracks were investigated using the fractographic method for the various types of cracks such as an exterior crack, a cyclic thermal shock crack, and an piezo-electric crack. It was found out that the crack origin was the pore at the end of the Ni inner electrode after bake-out. Even though the three dimensional crack shapes were different, the crack origins were seemed to be similar. The exterior crack could grow from the origin with the aids of residual and applied stress. FEM (finite element method) analysis was used to calculate the stress distribution of residual and applied stress. And the concept of fracture mechanics was applied for the explanation of the crack initiation and propagation from the stresses concentration.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3221-3224
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• 2010

This study investigates the requirements of lithium-air cathodes, which directly influence discharge capacity. The cathodes of Li-air cell are made by using five different carbon materials, such as Ketjen black EC600JD, Super P, Ketjen black EC300JD, Denka black, and Ensaco 250G. The Ketjen black EC600JD provides discharge capacity of 2600 mAh/g per carbon weight, while that of Ensaco 250G shows only 579 mAh/g. To figure out the differences of discharge capacity from carbon materials, their surface area and pore volume are analyzed. These are found out to be the critical factors in determining discharge capacity. Furthermore, carbon loading on Ni foam and amounts of electrolyte are significant factors that affect discharge capacity. In order to investigate catalyst effect, electrolytic manganese dioxide (EMD) is incorporated and delivered 4307 mAh/g per carbon weight. This infers that EMD facilitates to break $O_2$ interactions and leads to enhance discharge capacity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.430-430
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• 2013

Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• Corrosion Science and Technology
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• v.5 no.3
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• pp.85-89
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• 2006

KAERI(Korea Atomic Energy Research Institute) has developed a repassivation rate test system which can be operated at $300^{\circ}C$. It consists of an autoclave, three electrodes for an electrochemical test and a diamond scratch tip. All the electrodes are electrically insulated from the autoclave by using high temperature fittings. Reproducible repassivation curves of alloy 600 at 300 C were obtained. Repassivation rate of alloy 600 at pH 13 was slower than that of pH 10. Stress corrosion cracking test was carried as a function of the pH at a high temperature. At pH 10, alloy 600 showed a severe stress corrosion cracking(SCC), whereas it did not show a SCC at pH 7. From the viewpoint of a relationship between the current density and the charge density, a big difference was observed in the two solutions; the slope of pH 13 was steeper than that of pH 10. So the stress corrosion susceptibility at pH 13 seems to be higher than that of pH 10. The system would be a good tool to evaluate the SCC susceptibility of alloy 600 at a high temperature.