• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.426-427
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• 2005

This research describes a new constructing method of multifunctional biosensor using many kinds of biomaterials. A metal particle and an array was fabricated by photolithographic. Biomaterials were immobilized on the metal particle. The array and the particles were mixed in a buffer solution, and were arranged by magnetic force interaction and self-assembly. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost with Au surface on top. The particles were successfully arranged on the array. The biomaterial activities were detected by chemiluminescence and electrochemical methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.386-387
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• 2006

This research describes a new constructing method of multifunctional biosensor using many kinds of biomaterials. A metal particle and an array was fabricated by photolithographic. Biomaterials were immobilized on the metal particle. The array and the particles were mixed in a buffer solution, and were arranged by magnetic force interaction and self-assembly. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost with Au surface on top. The particles were successfully arranged on the array. The biomaterial activities were detected by chemiluminescence and electrochemical methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1281-1286
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• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of Technologic Dentistry
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• v.31 no.1
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• pp.55-61
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• 2009

Passive fitting of meso-structure and super-structures is a predominant requirement for the longevity and clinical success of osseointegrated dental implants. However, precision and passive fitting has been unpredictable with conventional methods of casting as well as for corrective techniques. Alternative to conventional techniques, electro discharge machining(EDM) is an advanced method introduced to dental technology to improve the passive fitting of implant prosthesis. In this technique material is removed by melting and vaporization in electric sparks. Regarding the efficacy of EDM, the application of this technique induces severe surface morphological and elemental alterations due to the high temperatures developed during machining, which vary between $10,000{\sim}20,000^{\circ}C$. The aim of this study was to investigate the morphological and elemental alterations induced by EDM process of casting dental gold alloy and non-precious alloy used for the production of implant-supported prosthesis. A conventional clinical dental casting alloys were used for experimental specimens patterns, which were divided in three groups, high fineness gold alloy(Au 75%, HG group), low fineness gold alloy(Au 55%, LG group) and nonprecious metal alloy(Ni-Cr, NP group). The UCLA type plastic abutment patterns were invested with conventional investment material and were cast in a centrifugal casting machine. Castings were sandblasted with $50{\mu}m\;Al_2O_3$. One casting specimen of each group was polished by conventional finishing(HGCON, LGCON, NPCON) and one specimen of each group was subjected to EDM in a system using Cu electrodes, kerosene as dielectric fluid in 10 min for gold alloy and 20 min for Ni-Cr alloy(HGEDM. LGEDM, NOEDM). The surface morphology of all specimens was studied under an energy dispersive X-ray spectrometer (EDS). The quantitative results from EDS analysis are presented on the HGEDM and LGEDM specimens a significant increase in C and Cu concentrations was found after EDM finishing. The different result was documented for C on the NPEDM with a significant uptake of O after EDM finishing, whereas Al, Si showed a significant decrease in their concentrations. EDS analysis showed a serious uptake of C and Cu after the EDM procedure in the alloys studied. The C uptake after the EDM process is a common finding and it is attributed to the decomposition of the dielectric fluid in the plasma column, probably due to the development of extremely high temperatures. The Cu uptake is readily explained from the decomposition of Cu electrodes, something which is also a common finding after the EDM procedure. However, all the aforementioned mechanisms require further research. The clinical implication of these findings is related with the biological and corrosion resistance of surfaces prepared by the EDM process.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.77-85
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• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

• Journal of the Korean Society of Marine Environment & Safety
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• v.15 no.2
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• pp.157-164
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• 2009

The metals such as Al, Ag, Au, Cu, Cd, Co, Fe, Ni, Pb, Zn, etc are present at very low concentration in seawater and are classified as so-called trace metals. Whiles some of them are used in metabolism of living organism as a micronutrient, they may show toxic effects on organisms in case of a limited threshold concentration of them Plenty of studies on trace metals have been performed bemuse trace metals have a persistent influence and an adverse effect on marine environment and ecosystem. For long years, when the concentration of trace metals in natural waters such as seawater and fresh water are measured with high precision and accuracy, some systematic errors have been recognized to be present in measurements. Since 1975 in US and European countries, the measured concentration of trace metals in seawater have been found to be lower by factors of 10-1,000 than the previous data of trace metals measurements and the vertical profiles of the measurements have been shown to reflect well-known biological, physical and geochemical processes. These results are attributed to great advances in analytical instrumentation and methodology for trace metals measurements. Precautions against the contamination of samples are required to be taken in the process of sampling, storage, and analysis of samples. However, in Korea, erroneous data of trace metals with regard to ocean and marine environment related survey and investigations are reported The lock of exact understanding and information regarding precautions in sampling, storage and analysis of samples lead to the deterioration of data quality, especially in the analysis of trace metals. The major procedures to obtain the accurate data of trace metals in natural waters are introduced for applying to the study and assessment of marine environments.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.35-39
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• 2011

Shearing characteristics of Sn-3.0wt%Ag-0.5wt%Cu ball for standardization of high speed shear test were investigated. The solder ball of 450 ${\mu}m$ in diameter was reflowed at $245^{\circ}C$ on FR4 PCB (Printed Circuit Board) to prepare a sample for the high-speed shear test. The metal pads on the PCB were OSP (Organic Solderability Preservative, Cu pad) and ENIG (Electroless Nickel/Immersion Gold, i.e CulNi/Au). Shearing speed was varied from 0.5 to 3.0 m/s, and tip height from 10 to 135 ${\mu}m$. As experimental results, for the OSP pad, a ductile fracture increased with tip height, and it decreased with shearing speed. In the case of ENIG pad, the ductile fracture increased with the tip height. The tip height of 10 ${\mu}m$ (2% of solder ball diameter) was unsuitable since the fracture mode was mostly pad lift. Shear energy increased with increasing shearing tip height from 10 to 135 ${\mu}m$ for both of OSP and ENIG pads.