Formation of Sn-Cu Solder Bump by Electroplating for Flip Chip

플립칩용 Sn-Cu 전해도금 솔더 범프의 형성 연구

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

플립칩용으로 Sn-Cu 공정 솔더 범프를 전해도금을 이용하여 제조하고 특성을 연구하였다. Si 웨이퍼 위에 UBM(Under Bump Metallization)으로 Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm)를 전자빔 증착기로 증착하였다. 전류밀도가 1 A/d$\m^2$에서 8 A/d$\m^2$으로 증가함에 따라 Sn-Cu 솔더의 도금속도는 0.25 $\mu\textrm{m}$/min에서 2.7 $\mu\textrm{m}$/min으로 증가하였다. 이 전류밀도의 범위에서 전해도금된 Sn-Cu 도금 합금의 조성은 Sn-0.9∼1.4 wt%Cu의 거의 일정한 상태를 유지하였다. 도금 전류밀도 5 A/d$\m^2$, 도금시간 2hrs, 온도 $20^{\circ}C$의 조건에서 도금하였을 때, 기둥 직경 약 120 $\mu\textrm{m}$인 양호한 버섯 형태의 Sn-Cu 범프를 형성할 수 있었다. 버섯형 도금 범프를 $260^{\circ}C$에서 리플로우 했을 때 직경 약 140 $\mu\textrm{m}$의 구형 범프가 형성되었다. 화학성분의 균일성을 분석한 결과 버섯형 범프에서 존재하던 범프내 Sn 등 성분 원소의 불균일성은 구형 범프에서는 상당 부분 해소 되었다.