• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.3
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• pp.245-250
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• 2011

An UV/thermal hybrid nanoimprint lithography system was designed and implemented for the pattern transfer to flexible substrates. This system can utilize a plate stamp, roll stamp, and film stamp. For all cases of using those stamps, this system is also switchable an UV or thermal nanoimprint lithography mode. This paper shows how to design the heating and UV curing plates and proposes how to change them easily. Because the pressure condition and the speed of the press roller varies by the characteristics of the stamp and substrate, all the parameters related to the nanoimprint lithography have to adjustable. Some transferred patterns are shown in this paper to verify the performance of the hybrid nanoimprint lithography system. The flexible substrates with nano-scale patterns on them will be key components for next generation technologies such as flexible displays, bendable semi-conductors, and solar cells.

• Nuclear Engineering and Technology
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• v.47 no.6
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• pp.647-661
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• 2015

The supercritical $CO_2$ (S-$CO_2$) Brayton cycle has recently been gaining a lot of attention for application to next generation nuclear reactors. The advantages of the S-$CO_2$ cycle are high efficiency in the mild turbine inlet temperature region and a small physical footprint with a simple layout, compact turbomachinery, and heat exchangers. Several heat sources including nuclear, fossil fuel, waste heat, and renewable heat sources such as solar thermal or fuel cells are potential application areas of the S-$CO_2$ cycle. In this paper, the current development progress of the S-$CO_2$ cycle is introduced. Moreover, a quick comparison of various S-$CO_2$ layouts is presented in terms of cycle performance.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.12
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• pp.1419-1424
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• 2011

Nanoimprint lithography is a next generation lithography technology, which enables to fabricate nano to micron-scale patterns through simple and low cost process. Nanoimprint lithography has been applied in various industry fields such as light emitting diodes, solar cells and display. Functional patterns, including anti-reflection moth-eye pattern, photonic crystal pattern, fabricated by nanoimprint lithography are used to improve overall efficiency of devices in that fields. For these reasons, in this study, sub-micron-scaled functional patterns were directly fabricated on Si and glass substrates by thermal imprinting process using ZnO nano-particles dispersion resin. Through the thermal imprinting process, arrays of sub-micron-scaled pillar and hole patterns were successfully fabricated on the Si and glass substrates. And then, the topography, components and optical property of the imprinted ZnO nano-particles/resin patterns are characterized by Scanning Electron Microscope, Energy-dispersive X-ray spectroscopy and UV-vis spectrometer, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.55-60
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• 2021

In order to produce wearable displays with high adhesion while maintaining flexible characteristics, the adhesive method using electro plating method was carried out. Laser lift-off (LLO) transcription was also used to remove sapphire substrates from LEDs bonded to fibers. Afterwards, the SEM and EDS data of the sample, which conducted the adhesion method using electro plating, confirmed that copper actually grows through the lattice of the fiber fabric to secure the light source and fiber. The adhesion characteristics of copper were checked using Universal testing machine (UTM). After plating adhesion, the characteristics of the LLO transcription process completed and the LED without the transcription process were compared using probe station. The electroluminescence (EL) according to the enhanced current was measured to check the characteristics of the light source after the process. As the current increases, the temperature rises and the bandgap decreases, so it was confirmed that the spectrum shifted. In addition, the change in the electrical characteristics of the samples according to the radius change is confirmed using probe station. The radius strain also had mechanical strength that copper could withstand bending stress, so the Vf variation was measured below 6%. Based on these results, it is expected that it will be applied to batteries, catalysts, and solar cells that require flexibility as well as wearable displays, contributing to the development of wearable devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.6
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• pp.556-561
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• 2020

The aging and declining agricultural population in the modern society requires improvement of the agricultural environment and is one of the representative problems. And since most of the work systems always require a transport work, the ratio of labor consumed in the transport work is very high. Accordingly, many types of transport vehicles are being developed and sold, and in the early days, most of them are powered transport vehicles using fossil fuels. However, it is paying attention to next-generation eco-friendly energy such as hydrogen, fuel cells, solar power, and bio due to the strengthening of international environmental regulations such as global warming and the Convention on Climate Change and the depletion of fossil fuels. Therefore, in this study, the ultimate goal is to develop an eco-friendly, easy-to-operate, safe agricultural electric vehicle that replaces fossil fuels. It was designed with a focus on controlling a wide range of vehicle speeds and securing stability of electric agricultural vehicles. Considering the performance and design, it is composed of a frame, a driving part, a steering part, and a controller system, and we are going to review and manufacture each part. It is believed that the manufactured electric vehicle for agriculture can be easily and conveniently operated in an agricultural society where young manpower is scarce, and can be helpful to the agricultural society through high efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.