• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.4
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• pp.358-365
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• 2011

Recently, the LED(Light Emitting Diode) replacing incandescent light bulbs and fluorescent light has great attentions as a most promising candidate for the next generation lighting source due to its environment-friendly characteristics, long life and excellent efficiency. Moreover, since it is a semiconductor device which can convert the electric energy to visible light at a very high speed, it can also used as a communication device. Therefore, the VLC(Visible Light Communication) using the LED can perform the near field communication and lighting function at the same time without additional expenses. However, since the switching device of the conventional LED driver for VLC is operated in the linear region, there exist several drawbacks such as a poor power conversion efficiency and serious heat generation. On the other hand, since the proposed driver is operated in the on/off switching region, it features a higher efficiency and more improved heat generation. To verify the validity of the proposed LED driver, experimental results from a prototype of 20W rated LED driver applied to 3MHz bps broadcasting audio system are given.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.215-220
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• 2016

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.322-322
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• 2016

Phase change memory (PCM) has attracted much attention as one of the most promising candidates for next-generation nonvolatile memory. In that regard, the purposes of the study are to propose reference of effective pulse parameter to control phase switching operation and to invest the effect of nitrogen doped in PCM materials for improved cycling stability and economic energy consumption. Switching operation of PCM is affected by electric pulse parameter and as shown in figure.1 are composed to RT(rising time), ST(setting time), FT(falling time) and the effect of these parameter was precisely investigated. Transmission electron microscope (TEM) was used to confirm fine structure and retention cycle test was conducted to confirm reliability. Finally improvement reliability and economic power consumption in quantitatively are obtainable by optimum pulse parameter and nitrogen doping in GST material. these study is related to the engineering background of other semiconductor industries and it have confirmed to possibility further applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.83-87
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• 2020

In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.490-490
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• 2013

In semiconductor industry, it is expected that plasma process which use 450 mm source will be used at next generation. However, main obstacle of the large area plasma source is plasma uniformity from it. When electrode is enlarged, field difference between center area and side area reduces the plasma uniformity [1-3]. Therefore we investigate multi-electrode which diminish this field difference.We designed two multi-electrode models. One has two segments and the other has five segments. Each multi-electrode model is connected with two power generator and two matchers. One generator and one matcher is connected with center electrode part. The other one generator and the other one matcher is connected with side electrode part. The ion density is measured at 29 points by using floating harmonic method [4-6]. After measuring the data of each multi-electrode model, we discuss the difference of profile between two models' data.

• Ceramist
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• v.21 no.2
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• pp.4-18
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• 2018

Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.699-701
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the SoC design trends for smart motor vehicle info-tainment platforms.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.668-670
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the smart phone analog and interface techniques.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.