• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• 전기의세계
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• v.23 no.6
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• pp.56-59
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• 1974

It is well-known that the anode circuit of SCR has the current controlled negative resistance characteristic. Recently the present auther has shown that the gate circuit of SCR has the voltage controlled negative resistance characteristic for the constant anode voltage. It is shown of the equivalent model to SCR(when conducting) the voltage controlled negative resistance characteristic for gate circuit. And it is possible to make SCR gate oscillators with their desired characteristic for illustration.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.2
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• pp.7-15
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• 1973

The operation behaviors of negative-resistance multivibrators. are described. The oscillation phenomena in monostable and bistable mode negative-resistance circuits are analyzed by using a analog computer. It is presented that voltage-controlled negative -resistance switching circuits may be in oscillation state for a time or parmanently by adding the bias voltage or trigger pulse. The results show that the care must be taken for this fact in the constructions of negative resistance switching circuits.

• Journal of Magnetics
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• v.16 no.2
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• BMB Reports
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• v.56 no.6
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• pp.326-334
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• 2023

Antibiotic resistance (AR) is a silent pandemic that kills millions worldwide. Although the development of new therapeutic agents against antibiotic resistance is in urgent demand, this has presented a great challenge, especially for Gram-negative bacteria that have inherent drug-resistance mediated by impermeable outer membranes and multidrug efflux pumps that actively extrude various drugs from the bacteria. For the last two decades, multidrug efflux pumps, including AcrAB-TolC, the most clinically important efflux pump in Gram-negative bacteria, have drawn great attention as strategic targets for re-sensitizing bacteria to the existing antibiotics. This article aims to provide a concise overview of the AcrAB-TolC operational mechanism, reviewing its architecture and substrate specificity, as well as the recent development of AcrAB-TolC inhibitors.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.229-232
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• 2000

In this study, An active band grass filter for 2.14GHz have been designed with MMIC using negative resistance circuit. The negative resistance element was realized with a common-drain FET with series inductive feedback. The designed active filter showed an insertion loss of 0dB at 2.14GHz and a 3-dB bandwidth of 125MHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.6
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• pp.11-24
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• 1973

A new simple technique for 2-terminal negative resistance cireait analysis and synthesis is developed, by using the equivalent e.m.f. defined as a function of input lotage or current variation. The technique is applied to design 2-terminal junction transistor negative resistance circuits based on the parameter control method. Modeling circuits for SCR, GTO-SCR and SSS are also derived from the proposed transistor negative resistance circuits, and the merits of the modeling circuits are discussed.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.45-52
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• 2000

The conduction characteristics in Oriented polypropylene (OPP) film were studied over electric field intensities between 10 M/V m and 300 M/V m . The range of the conduction characteristics was divided in to five regions with increasing field intensity. Particularly, in the region from 70 Mb/m to 82 MV/m voltage-controlled negative resistance was displayed. In the negative resistance region current oscillations were also observed the negative resistance characteristics could by explaine by Gibbons theory.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.4
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• pp.33-37
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• 1978

A versatile negative resistance using one transistor, one photo-coupler and three resisters, which can be used as either a voltage controlled or current controlled negative resistance, is designed. The versatility is obtained by changing the transistor and one connection of the circuit. The negative resistance region is linear and its value can be varied by varying one of the three resistor values.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.638-648
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• 2003

An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.