• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• 전기의세계
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• 제23권6호
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• pp.56-59
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• 1974

It is well-known that the anode circuit of SCR has the current controlled negative resistance characteristic. Recently the present auther has shown that the gate circuit of SCR has the voltage controlled negative resistance characteristic for the constant anode voltage. It is shown of the equivalent model to SCR(when conducting) the voltage controlled negative resistance characteristic for gate circuit. And it is possible to make SCR gate oscillators with their desired characteristic for illustration.

• 대한전자공학회논문지
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• 제10권2호
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• pp.7-15
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• 1973

전압제어형 부성저항소자를 사용하여 말티바이브레이터를 설계할 경우의 안정점 설정과 회로동작 안정성에 관하여 논한다. 즉 직류적으로 한개 혹은 두개의 안정점을 가지도록 설계된 회로가 일시적 흑은 영구적 발진을 일으키는 현상에 대하여 아나로그 계산기의 모의에 의하여 해석하고, 실험적으로 확인함으로써, 부성저항스윗칭회로 설계상의 유의점을 제시한다.

• Journal of Magnetics
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• 제16권2호
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• pp.140-144
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• 2011

We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged I-V characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 MHz high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

• BMB Reports
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• 제56권6호
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• pp.326-334
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• 2023

Antibiotic resistance (AR) is a silent pandemic that kills millions worldwide. Although the development of new therapeutic agents against antibiotic resistance is in urgent demand, this has presented a great challenge, especially for Gram-negative bacteria that have inherent drug-resistance mediated by impermeable outer membranes and multidrug efflux pumps that actively extrude various drugs from the bacteria. For the last two decades, multidrug efflux pumps, including AcrAB-TolC, the most clinically important efflux pump in Gram-negative bacteria, have drawn great attention as strategic targets for re-sensitizing bacteria to the existing antibiotics. This article aims to provide a concise overview of the AcrAB-TolC operational mechanism, reviewing its architecture and substrate specificity, as well as the recent development of AcrAB-TolC inhibitors.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.229-232
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• 2000

In this study, An active band grass filter for 2.14GHz have been designed with MMIC using negative resistance circuit. The negative resistance element was realized with a common-drain FET with series inductive feedback. The designed active filter showed an insertion loss of 0dB at 2.14GHz and a 3-dB bandwidth of 125MHz.

• 대한전자공학회논문지
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• 제10권6호
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• pp.11-24
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• 1973

본 논문에서는 전압안정 및 전류안정부저항영역을 갖는 2단자회로를 해석함에 있어서 따로 입력변화의 함수로서 표시되는 등가주전력을 사용하였고 부저항회로에 대한 간단한 새로운 통일된 해석을 할 수 있음을 도시법을 기초로 하여 제시하였다. 이 해석에 의거한 설계방법의 예로서 접합트랜지스터를 사용한 부성저항회로구성을 하였으며 이 회로를 기본으로 하여 SCR, GTO-SCR 및 SSS 특성의 한 모데링회로를 제안하였다. 이들 모데링회로의 촙핑회로, 톱니파발생회로 및 교류위상제어회로로서의 응용예와 그 특성을 아울러 검토하였다.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.45-52
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• 2000

The conduction characteristics in Oriented polypropylene (OPP) film were studied over electric field intensities between 10 M/V m and 300 M/V m . The range of the conduction characteristics was divided in to five regions with increasing field intensity. Particularly, in the region from 70 Mb/m to 82 MV/m voltage-controlled negative resistance was displayed. In the negative resistance region current oscillations were also observed the negative resistance characteristics could by explaine by Gibbons theory.

• 대한전자공학회논문지
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• 제15권4호
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• pp.33-37
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• 1978

전압제어형이나 전류제어형부성저항으로 사용될 수 있는 호용성이 있는 광결합부성저항회로가 설계되었다. 이 호용성은 트런지스터의 교환 및 회로내의 한 접속점을 변경시킴으로 이루어진다. 이러한 부성저항회로의 부성저항특성은 매우 선형적이며 부성저항값 및 I-V특성은 수동소자값의 변화로 넓은 범위에 걸쳐 변화된다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.638-648
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• 2003

An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.