• Korean Chemical Engineering Research
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• 제47권2호
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• pp.163-168
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• 2009

본 연구에서는 양이온, 중심원소, 배위원소가 치환된 Keggin 형 및 Wells-Dawson 형 헤테로폴리산 촉매의 NDR(negative differential resistance) 거동을 STM(scanning tunneling microscopy)을 이용하여 살펴보았다. 헤테로폴리산 촉매의 NDR 전압과 산화환원능력 사이에는 일정한 상관관계가 있었다. 촉매의 구조적 차이에 상관없이 산화환원능력이 높은 헤테로폴리산 촉매는 보다 낮은 음전압에서 NDR 거동을 나타내었다. 이처럼 NDR 전압은 촉매의 산화환원능력을 대변하는 하나의 correlating parameter로 활용될 수 있었다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.237-237
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• 1999

We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.

• 디지털산업정보학회논문지
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• 제4권4호
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• 대한전자공학회논문지SD
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• 제44권7호통권361호
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• pp.1-8
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• 2007

고주파에서 동작하는 높은 출력전력과 dc-rf 변환효율을 가진 GaAs Gunn 다이오드에 대한 기본 연구로써, graded gap injector를 가진 planar 형태의 GaAs Gunn 다이오드를 제작하고 그 DC 특성을 살펴보았다. 제안된 에피 구조를 사용하여 GaAs Gunn 다이오드 소자를 설계, 제작하였으며 이동전자소자인 Gunn 다이오드의 DC 특성이 부성미분저항을 가짐을 확인하였다. 제작된 소자의 부성미분저항 특성을 다이오드의 cathode 반지름의 함수로 고찰하였으며, 이 과정을 통하여 계곡 간 전자이동 특성을 분석하였다.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

• 전자통신동향분석
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• 제36권3호
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.622-627
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• 2005

In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.