• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• 한국자기학회지
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• 제7권5호
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• pp.250-257
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• 1997

Ar+N$_{2}$ 가스분위기에서 반응성 스퍼터링법으로 제조된 Fe-Nb-B-N 박막의 미세구조 및 자기적 특성을 조사하였다. 질소첨가한 적정조성의 Fe-Nb-B-N 박막은 우수한 고주파 연자기 특성을 보였는데, 그 특성은 다음과 같다. 포화자화(4 .pi. M$_{s}$ )는 16.5 kG, 보자력(H$_{c}$)은 0.13 Oe, 1 MHz에서의 실효투자율은 약 5,000의 값을 나타내었다. 특히 실효투자율은 10 MHz까지 겨의 변화가 없었으며, 100 MHz에서도 약 2,000의 값을 보여 매우 우수한 고주파 특성을 가진 재료로 판단된다. 한편, 이러한 우수한 특성을 지닌 Fe-Nb-B-N 박막의 미세구조를 TEM으로 관찰한 결과, 적정 열처리온도인 590 .deg. C에서 열처리한 Fe-Nb-B-N 박막은 약 5 ~ 10 nm의 .alpha. -Fe phase, Nb-nitride의 석출물과 Nb-B rich 비정질상 등으로 이루어져 있음을 알 수 있었다. 반면에 N이 첨가되지 않은 Fe-Nb-B 박막의 경우에는 약 10 nm정도의 .alpha. -Fe결정립과 Nb-B rich 비정질상의 두가지 상으로 이루어져 있다. 따라서 N을 첨가한 경우에 더욱 미세한 .alpha. -Fe 결정립을 얻을 수 있음이 확인되었다. 이는 N 첨가로 인한 결정립의 미세화 효과 와 Nb-nitride 형성으로 인한 결정립 성장의 억제효과에 의한 것으로 생각된다. 따라서 Fe-Nb-B-N 박막의 우수한 연자기 특성은 결정립 미세화에 기인하는 것으로 판단된다.

• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.20-25
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• 2018

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• 한국표면공학회지
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• 제46권5호
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• pp.187-191
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• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.