• Title/Summary/Keyword: Nanotube tip

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Fabrication and Mechanical Properties of Carbon Nanotube Probe for Ultrasmall Force Measurement in Biological Application (생물학적 초미세력 검출을 위한 탄소나노튜브 프로브의 제작 및 기계적 특성 검출)

  • Kwon, Soon-Geun;Park, Hyo-Jun;Lee, Hyung-Woo;Kwak, Yoon-Keun;Kim, Soo-Hyun
    • Journal of the Korean Society for Precision Engineering
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    • v.25 no.5
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    • pp.140-147
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    • 2008
  • In this study, a carbon nanotube probe (CNT probe) is proposed as a mechanical force transducer for the measurement of pico-Newton (pN) order force in biological applications. In order to measure nantube's displacement in the air or liquid environment, the fabrication of a CNT probe with tip-specific loading of fluorescent dyes is performed using tip- specific functionalization of the nanotube and chemical bonding between dyes and nanotube. Also, we experimentally investigated the mechanical properties of the CNT probe using electrostatic actuation and fluorescence microscope measurement. Using fluorescence measurement of the tip deflection according to the applied voltage, we optimized the bending stiffness of the CNT probe, therefore determined the spring constant of the CNT probe. The results show that the spring constant of CNT probes is as small as 1 pN/nm and CNT probes can be used to measure pN order force.

The Length Control of Carbon Nanotube using Electrochemical Etching (전해에칭을 이용한 탄소나노튜브의 길이 제어)

  • 이준석;권순근;곽윤근;김수현
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.6
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    • pp.167-171
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    • 2004
  • In this paper, we proposed a new method to control the length of carbon nanotube using electrochemical etching. We made a nano probe that was composed of the tungsten tip and multi-wall carbon nanotube. The nano probe was placed on the nano stage and the carbon nanotube on the nano probe was etched in the electrolyte solution with the applied voltage. The overall procedures were done under optical microscope and can be monitored. We can obtain a nano probe with proper length through this procedure.

Non-contact mode measurement of high aspect ratio tip (High aspect ratio 팁의 비접촉모드에서의 측정)

  • Shin Y.H.;Han C.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.463-464
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    • 2006
  • This paper present experimental results by non-contact mode Atomic Force Microscopy using high aspect ratio tips (HAR-T). We fabricated the carbon nanotube tip based on dielectrophoresis and the carbon nano probe by focused ion beam after dielectrophoretic assembling. In this paper, we measure AAO sample and trench structure to estimate HAR-T's performance and compared with conventional Si tip. We confirmed that results of HAR-T's performance in non contact mode was very superior than conventional tip.

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Molecular Dynamics Simulations of Fullerene Nanostructure Fabrications by Atomic Force Microscope Carbon Nanotube tip (원자간력 현미경 탄소 나노튜브 팁을 이용한 플러렌 나노 구조물 제작에 관한 분자동역학 시뮬레이션)

  • 이준하;이홍주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.812-822
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    • 2004
  • This paper shows that carbon nanotubes can be applied to a nanopipette. Nano space in atomic force microscope multi-wall carbon nanotube tips is filled with molecules and atoms with charges and then, the tips can be applied to nanopipette when the encapsulated media flow off under applying electrostatic forces. Since the nano space inside the tips can be refilled, the tips can be permanently used in ideal conditions of no chemical reaction and no mechanical deformation. Molecular dynamics simulations for nanopipette applications demonstrated the possibility of nano-lithography or single-metallofullerene-transistor array fabrication.

Nonlinear Dynamics of Carbon Nanotube-Based Nanoelectromechanical Device (탄소나노튜브 구조를 이용한 NEMS소자의 비선형 동역학)

  • Lee, Soo-Il
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2005.05a
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    • pp.423-423
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    • 2005
  • A carbon nanotube-based nanoelectromechanical device in resonance is examined theoretically. Mechanical deflections are electrically induced and resonantly excited at the fundamental frequency in cantilevered carbon nanotube. The electrically conducting elastic beam with van der Waals interactions at the tip is used for the modeling of the carbon nanotube device. Due to the elastic, electrical, and van der Waals interactions, the total energy of the system shows the unsymmetric two-well potentials. The predictions can be made that the device exhibits its nonlinear dynamic features in the two-well potentials. Also it is predicted that the fundamental frequency of the carbon nanotube device was changed by the nonlinear interactions induced by electrical and van der Waals potentials between carbon nanotube and ground surface of the device.

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Characterization of Electrical Properties and Gating Effect of Single Wall Carbon Nanotube Field Effect Transistor

  • Heo, Jin-Hee;Kim, Kyo-Hyeok;Chung, Il-Sub
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.4
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    • pp.169-172
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    • 2008
  • We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

Field-emission characteristics of carbon nanotube emitters in terms of tip angles of conical-type metal substrates (원추형 금속 기판의 팁 각도에 따른 탄소 나노튜브 이미터의 전계방출 특성)

  • Kim, Jong-Pil;Noh, Young-Rok;Chang, Han-Beet;Park, Jin-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.2
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    • pp.115-119
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    • 2011
  • A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

Field emission properties of tip-type carbon nanotube emitters with substrate interlayer (기판 삽입층을 갖는 팁 구조 탄소 나노튜브 이미터의 전계방출 특성)

  • Chang, Han-Beet;Kim, Jong-Pil;Kim, Bu-Jong;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1410-1411
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    • 2011
  • Tip-type carbon nanotube(CNT) based electron emitters were fabricated by forming a hafnium(Hf) interlayer between the CNT and the substrate. The CNTs were deposited by using the electrophoretic deposition method and thermally treated. No significant change in the microscopic structure of the CNTs, such as the ratio of length to diameter, was observed after the deposition of Hf interlayer and thermal treatment. As compared with the CNT emitter without the Hf-interlayer and thermal treatment, the CNT emitter with the Hf-interlayer and thermal treatment showed noticeably improved electron-emission properties due to the enhanced adhesion.

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