• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.249-249
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.62-70
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• 2005

The nanoindenter and AFM have been used for nanofabrication, such as nanolithography, nanowriting, and nanopatterning, as well as measurement of mechanical properties and surface topology. Nanoscale indents can be used as cells for molecular electronics and drug delivery, slots for integration into nanodevices, and defects for tailoring the structure and properties. Therefore, it is very important to make indents of desired morphology (shape, size and depth). Indents of different shapes can be obtained by using indenters of different geometries such as a cube comer and conical and spherical tips. The depth and size of indents can be controlled by making indentations at different indentation loads. However, in case of viscoplastic viscoelastic materials such as polymethylmethacrylate (PMMA) the time dependent deformation (TDD) should also be considered. In this study, the effect of process parameters such as loading rate and hold-time at peak load on the indent morphology (maximum penetration depth, elastic recovery, transient creep recovery, residual depth pile-up height) of PMMA were studied for hyperfine pattern fabrication.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.54-55
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• 2002

The fabrication, characterization and manipulation of nanoparticle system brings together physics, chemistry, materials science and biology in an unprecedented way. Phenomena occurring in such systems are fundamental to the workings of electronic devices, but also to living organisms. The ability to fabricate the surface of nanoparticles Is essential in the further development of functional devices that incorporate nanoscale features. Even more essential is the ability to introduce a wide range of chemical and materials flexibility into these structures to build up more complex nanostructures that can ultimately rival biological nanosystems. In this respect, polymers are potentially ideal nanoscale building blocks because of their length scale, well-defined architecture, controlled synthesis, ease of processing and wide range of chemical functionality that can be incorporated. In this presentation, we will look at a number of promising polymer-based nanoparticle fabrication strategies that have been developed recently, with an emphasis on those techniques that incorporate nanostructured polymeric particles into electronic devices or biomedical applications. And functional nanoparticles deliberately designed using several powerful process methods and their application will be discussed. Nanostructured nanoparticles, what we called, implies dispersed colloids with the size ranged from several nanometers to hundreds of nanometer. They have extremely large surface area, thus it is very important to control the morphology or surface functionality fitted for adequate objectives and properties. Their properties should be controlled for various kind of bio-related technologies, such as immunomagnetic cell separation, drug delivery systems, labeling and identification of lymphocyte populations, extracorporeal and hemoperfusion systems, etc. Well-defined polymeric nanoparticles can be considered as smart bomb or MEMS.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.262-269
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• 2013

Though focused ion beam (FIB) is one of the candidates to fabricate the nanoscale patterns, precision milling of nanoscale structures is not straightforward. Thus this poses challenges for novice FIB users. Optimal determination in FIB parameters is a crucial step to fabricate a desired nanoscale pattern. There are two main FIB parameters to consider, beam current (beam size) and dose (beam duration) for optimizing the milling condition. After fixing the dose, the proper beam current can be chosen considering both total milling time and resolution of the pattern. Then, using the chosen beam current, the metal nano hole structure can be perforated to the required depth by varying the dose. In this experiment, we found the adequate condition of $0.1nC/{\mu}m^2$ dose at 1 pA Ga ion beam current for 100 nm thickness perforation. With this condition, we perforated the periodic square array of elliptical nano holes.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.28 no.2
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• pp.55-57
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• 2002

The fabrication, characterization and manipulation of nanosystems brings together physics, chemistry, materials science and biology in an unprecedented way, Phenomena occurring in such systems are fundamental to the workings of electronic devices, but also to living organisms. The ability to fabricate nanostructures is essential in the further development of functional devices that incorporate nanoscale features. Even more essential is the ability to introduce a wide range of chemical and materials flexibility into these structures to build up more complex nanostructures that can ultimately rival biological nanosystems. In this respect, polymers are potentially ideal nanoscale building blocks because of their length scale, well-defined architecture, controlled synthesis, ease of processing and wide range of chemical functionality that can be incorporated. In this presentation, we will look at a number of promising polymer-based nanofabrication strategies that have been developed recently, with an emphasis on those techniques that incorporate nanostructured polymers into devices and that exploit intrinsic polymer properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.369-369
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• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.87.2-87.2
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• 2016

As an era of nano science approaches, the understanding on the shape and optical properties of various materials in a nanoscale range is getting important more seriously than ever. Accordingly the development of high spatial-temporal-spectral resolution measurement tools for characterization of nanomaterials/structures is highly required. Generally, the various properties of sample can be measured independently, e.g. to observe the structural property of sample, we use the scanning electron microscopy or atomic force microscopy, and to observe optical property, we have to use another independent measurement tool such as photoluminescence spectroscopy or Raman spectroscopy. In the case of nano-materials, however, it is very difficult to find out the same position of sample at every different measurement processes, and the condition of sample can be changed by the influence of first measurement. The tip enhanced Raman scattering(TERS), which can simultaneously measure the two or more information of sample with nanoscale spatial resolution, is one of solutions of this problem. In this talk, I will present our recent nano Raman scattering data of graphene that measured by TERS and optimized tip fabrication method for efficient experiment.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.