• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
• /
• pp.92.2-92.2
• /
• 2007

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제4권1호
• /
• pp.1-11
• /
• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• 제어로봇시스템학회지
• /
• 제8권6호
• /
• pp.23-25
• /
• 2002

이 논문은 탄소나노튜브의 전자소자 응용이라는 관점에서 최근의 연구동향과 실제적으로 응용이 되기 위해서 해결해야 할 이슈들을 정리하고자 하였다. 탄소나노튜브가 고해상도 투과전자현미경 1991년도에 발견된 이래로, 그 특유의 뛰어난 특성과 잠재되어있는 차세대 소자로서의 응용가능성으로 인하여 큰 주목을 받고 있는 실정이다 [1]. 93년에 수집 편에 불과하던 논문발표 건수가 2001년에는 1500 여편에 달하고 있으며 특허건수만 해도 2100여건에 달하고 있다 [2]. 탄소나노튜브는 수 nm~수백nm의 직경과 함께 내부의 빈 공간을 지니는 1차원의 튜브형태로서, 성장되는 구조에 따라서 금속성, 반도체성을 지니게 된다 [3,4]. 우수한 열전도성, 전자수송능력, 기계적 특성으로 이를 이용한 차세대소자 nanoelectronics [5], fileld emission display [6], hydrogen storage, fuel cell [7], supercapacitors [8], gas sensors [9] 및 STM 탐침으로서 그 응용이 기대 되어진다. 특히 이 논문에서는 나노튜브의 응용과 소자를 실현화하기 위해서 해결해야 할 이슈들과 기능 소자로서의 응용 현황을 중점적으로 살펴보고 그 연구 방향을 제언하고자 한다.

• 공업화학
• /
• 제29권3호
• /
• pp.253-257
• /
• 2018

DNA를 기반으로 한 금속 나노와이어는 전기적인 물성은 떨어지지만, 제작 방식이 간단하고, 대면적에서 대량으로 제작할 수 있으며, 유기 반응을 통해 분자 소자 제작의 기판으로도 사용가능한 차세대 재료로 전망된다. 본 총설에서는 DNA 금속화 반응을 이용한 나노와이어의 제작 및 3차원 구조체의 제작 기술에 대해 소개하고, 이와 관련한 연구 현황과 발전 방향에 대해 논의하고자 한다.

• Transactions on Electrical and Electronic Materials
• /
• 제15권6호
• /
• pp.324-327
• /
• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• 진공이야기
• /
• 제3권1호
• /
• pp.9-15
• /
• 2016

Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.423-423
• /
• 2008

One dimensional (1D) nanostructures, including nanowires, nanorods, nanobelts, and nanotubes, have been the focus of current research on nanotechnology because of their fundamental significance in chemistry, physics, materials science and engineering, and potential applications in nanoelectronics. We have synthesized Te-rich $Sb_xTe_{1-x}$ nanowires and nanotubes via thermal evaporation method under vapor-solid mechanism. The physical morphology and chemical composition of the fabricated nanowires and nanotubes were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.488.2-488.2
• /
• 2014

Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.179.2-179.2
• /
• 2014

Carbon nanotubes (CNT)-metal contacts play an important role in nanoelectronics applications such as field-effect transistor (FET) devices. Using Al and (10,0) CNT, we have recently showed that the CNT-metal contacts mediated via topological defects within CNT exhibits intrinsically low contact resistance, thanks to the preservation of the sp2 bonding network at the metal-CNT contacts.[1] It is well-established that metals with good wetting property such as Pd consistently yield good contacts to both metallic and semiconducting CNTs. In this work, the electronic and charge transport properties of the interfaces between capped CNT and Pd will be investigated based on first-principles computations and compared with previous results obtained for the Al electrodes.

• EDISON SW 활용 경진대회 논문집
• /
• 제3회(2014년)
• /
• pp.478-482
• /
• 2014

Graphene have renewed considerable interest in inorganic, two-dimensional materials for future electronics. However, graphene does not have a bandgap, it is limited to apply directly to transistors and logic devices. Hence, other layered materials such as molybdenum disulphide ($MoS_2$) have been investigated to address this challenge. Here, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of $MoS_2$/metal contacts, we perform density functional theory electronic structure calculations based on linear combination of atomic for the geometry, bonding, binding energy, PDOS, LDOS and electronic structure. We choose Au as a contact metal because it is the most common contact metal. In this paper, we demonstrate $MoS_2$/Au contacts have a more promising potential in flexible nanoelectronics than $MoS_2$ itself.