• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.297-302
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• 2009

We have successfully fabricated the alumina thick films using inkjet printing processes without a high temperature sintering process. Alumina suspension as dielectric ink was formulated by combining nano-sized alumina powders with an anionic polymer dispersant in formamide/water as co-solvent. The thickness of the printed alumina thick film was measured at around 5 um by field emission scanning electron microscope. The calculated packing density of 68.5 % from the printed alumina thick film was much higher than the same films fabricated by conventional casting or dip coating processes. Q factor of the dielectrics thick film infiltrated with cyanate ester resin was evaluated by impedance analyzer.

• 전기학회논문지
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• 제58권8호
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• pp.1566-1571
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• 2009

The discharge electrodes in ac PDP are coated with dielectric layer, and transparent MgO thin films are deposited on the dielectric layer. The main role of the MgO thin films in ac PDP is to protect the dielectric layer from sputtering by ion bombardment in the glow-discharge plasma. An additional important role of the MgO thin film is the high secondary electron emission coefficient which leads the low firing voltage and low cost of the PDP. In this paper, we investigated the relations of the crystal orientation about deposition thickness, deposition rate, temperature of substrate, and distance between the MgO tablet and the substrate. Additionally, we investigated the discharge characteristics of the AC PDP using nano-powder MgO tablet

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.32-39
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• 2008

Tunnel oxide of non-volatile memory (NVM) devices would be very difficult to downscale if ten-year data retention were still needed. This requirement limits further improvement of device performance in terms of programming speed and operating voltages. Consequently, for low-power applications with Fowler-Nordheim programming such as NAND, program and erase voltages are essentially sustained at unacceptably high levels. A promising solution for tunnel oxide scaling is tunnel barrier engineering (TBE), which uses multiple dielectric stacks to enhance field-sensitivity. This allows for shorter writing/erasing times and/or lower operating voltages than single $SiO_2$ tunnel oxide without altering the ten-year data retention constraint. In this paper, two approaches for tunnel barrier engineering are compared: the crested barrier and variable oxide thickness. Key results of TBE and its applications for NVM are also addressed.

• 전기화학회지
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• 제10권2호
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• pp.88-93
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• 2007

Nano-sized Sn particles were coated with Ni-P layer using an electroless deposition method and their anodic performance was tested for lithium secondary batteries. Uniform coating layers were obtained, of which the thickness was controlled by varying the $Ni^{2+}$ concentration in the plating bath. It was found that the Ni-P layer plays two important roles in improving the anodic performance of Sn powder electrode. First, it prevents the inter-particle aggregation between Sn particles during the charge/discharge process. Second, it provides an electrical conduction pathway to the Sn particles, which allows an electrode fabrication without an addition of conductive carbon. A pseudo-optimized sample showed a good cyclability and high capacity ($>400mAh\;g^{-1}$) even without conductive carbon loading.

• Applied Microscopy
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• 제43권2호
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• pp.98-101
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• 2013

In the present study, formation of yard and shell has been investigated in as-melt-spun $Gd_{30}Ti_{25}Al_{25}Co_{20}$ alloy using a variety of transmission electron microscopy techniques. The phase separation during cooling leads to the formation of the microstructure consisting of amorphous droplets with different size scales embedded in the amorphous matrix. Due to the interdiffusion at the interface after the first-step phase separation, ~50 nm-thick yard develops on the surface of the primary droplet particle. Due to the critical wetting phenomenon, ~5 nm thickness shell enveloping the droplet forms. The sell is enriched in Co and Ti, implying that the composition is close to that of the droplet.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2003년도 봄 학술발표회 논문집
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• pp.693-698
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• 2003

Corrosion of reinforcement and deterioration of concrete short the lifetime of reinforced concrete structure and affect the safety of the structure. In particular, the corrosion of reinforcement causing the inner pressure of the interface between the concrete and reinforcement is known to significantly contribute to the premature deterioration of concrete structure. Several attempts have been made to predict the cracking time of the concrete structure. However, problems such as the lack of reproducibility of concrete tests and non-uniformity of materials have hampered thess kinds of studies. Thus, the mechanism of the concrete cracking due to reinforcement corrosion is in the way. This studymeasured the mechanical properties of corrosion products using the nano-indentation test method. Likewise, the critical thickness of corrosion products for the cracking of concrete cover was investigated using the finite element and experimental methods.

• Steel and Composite Structures
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• 제26권1호
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• pp.1-15
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• 2018

This study reported, the effect of random variation in system properties on bending response of single wall carbon nanotube reinforced composite (SWCNTRC) plates subjected to transverse uniform loading is examined. System parameters such as the SWCNT armchair, material properties, plate thickness and volume fraction of SWCNT are modelled as basic random variables. The basic formulation is based on higher order shear deformation theory to model the system behaviour of the SWCNTRC composite plate. A C0 finite element method in conjunction with the first order perturbation technique procedure developed earlier by the authors for the plate subjected to lateral loading is employed to obtain the mean and variance of the transverse deflection of the plate. The performance of the stochastic SWCNTRC composite model is demonstrated through a comparison of mean transverse central deflection with those results available in the literature and standard deviation of the deflection with an independent First Order perturbation Technique (FOPT), Second Order perturbation Technique (SOPT) and Monte Carlo simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.126-126
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• 2004

1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)