• Journal of information and communication convergence engineering
• /
• v.9 no.6
• /
• pp.738-742
• /
• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• Korean Journal of Materials Research
• /
• v.13 no.7
• /
• pp.415-419
• /
• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• Korean Journal of Materials Research
• /
• v.16 no.5
• /
• pp.308-311
• /
• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.262-262
• /
• 2010

To investigate the effect of the amount of hydrogen on CVD grown-graphene, the flow rate of hydrogen was changed, while other process parameters were kept constant during CVD synthesis. Substrate which consists of 300nm-nickel/$SiO_2$/Si substrate, and methane gas mixed with hydrogen and argon were used for CVD growth. Graphene was synthesized at $950^{\circ}C$. The thickness and the defect of graphene were analyzed using raman spectroscopy. The synthesized graphene shows non-uniform and more defective below a certain amount of hydrogen.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.184.1-184.1
• /
• 2014

Nanostructures on Graphene surface receive highly attraction for many applications ranging from sensing technologies to molecular electronics. Recently J. Jasuja et al. reported the electrical property tailoring and Raman enhancement by the implantation and growth of dendritic gold nanostructures on graphene derivatives [ACSNANO, 3, 2358, 2013] Here, we introduced Si vapor on the graphen to induce the nanostructure. The surface property change of graphene by controlling the amount of Si and the thickness of graphene were investigated using high resolution photoemission spectroscopy (HRPES), and atomic force microscopy (AFM). The Si nanostructures on graphene show the thickness dependency of graphene, and the size of Si nano-structure reached to 7 nm and 15 nm on the mono and the multilayered graphene after $30{\AA}$ Si evaporation.

• Applied Microscopy
• /
• v.46 no.3
• /
• pp.155-159
• /
• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.59-66
• /
• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.134-135
• /
• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• Steel and Composite Structures
• /
• v.36 no.1
• /
• pp.63-74
• /
• 2020

The present research investigates post-buckling behavior of geometrically imperfect tapered curved micro-panels made of graphene oxide powder (GOP) reinforced composite. Micro-scale effects on the panel structure have been included based on strain gradient elasticity. Micro-panel is considered to be tapered based on thickness variation along longitudinal direction. Weight fractions of uniformly and linearly distributed GOPs are included in material properties based on Halpin-Tsai homogenization scheme considering. Post-buckling curves have been determined based on both perfect and imperfect micro-panel assumptions. It is found that post-buckling curves are varying with the changes of GOPs weight fraction, geometric imperfection, GOP distribution type, variable thickness parameters, panel curvature radius and strain gradient.

• Multiscale and Multiphysics Mechanics
• /
• v.1 no.1
• /
• pp.15-33
• /
• 2016

In this paper, an asymptotic method is employed to formulate nano- or micro-beams based on strain gradient elasticity. Although a basic theory for the strain gradient elasticity has been well established in literature, a systematic approach is relatively rare because of its complexity and ambiguity of higher-order elasticity coefficients. In order to systematically identify the strain gradient effect, an asymptotic approach is adopted by introducing the small parameter which represents the beam geometric slenderness and/or the internal atomistic characteristic. The approach allows us to systematically split the two-dimensional strain gradient elasticity into the microscopic one-dimensional through-the-thickness analysis and the macroscopic one-dimensional beam analysis. The first-order beam problem turns out to be different from the classical elasticity in terms of the bending stiffness, which comes from the through-the-thickness strain gradient effect. This subsequently affects the second-order transverse shear stress in which the surface shear stress exists. It is demonstrated that a careful derivation of a first strain gradient elasticity embraces "Gurtin-Murdoch traction" as the surface effect of a one-dimensional Euler-Bernoulli-like beam model.