• 한국세라믹학회지
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• 제42권12호
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• pp.854-859
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• 2005

Performance of micro scale intermediate temperature solid oxide fuel cell system has been successfully evaluated by computer simulation based on macro modeling. Two systems were studied in this work. The one is designed that the ceria-based electrolyte placed between composite electrodes and the other is designed that electrodes alternately placed on the electrolyte. The injected gas was composed of hydrogen and air. The polarization curve was obtained through a series of calculations for ohmic loss, activation loss and concentration loss. The calculation of each loss was based on the solving of mathematical model of multi physical-phenomena such as ion conduction, fluid dynamics and diffusion and convection by Finite Element Method (FEM). The performance characteristics of SOFC were quantitatively investigated for various structural parameters such as distance between electrodes and thickness of electrolyte.

• 한국표면공학회지
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• 제43권4호
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• pp.170-175
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.3-4
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• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.333-333
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• 2012

In this study, we investigated morphology of nanotube and micropore on the Ti-25Nb-xHf alloys with Hf contents after anodization. Ti-25Nb-xHf ternary alloys contained from (0~15) wt.% Hf contents were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1000^{\circ}C$ for 12h and then water quenching. The specimens were cut from ingots to 3mm thickness and first ground and polished using SiC paper (grades from 100 to 2000). 2steps anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. Micro-pore formation was performed in Ca+P mixed solution at 265V for 3min. After that, nanotube formation was in 1M $H_3PO_4$ electrolytes containing 0.8wt.% NaF solutionat 10V for 120min. Morphologies of micropore and nanotube depended on the Hf content in Ti-25Nb-xZr ternary system.

• 대한안전경영과학회지
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• 제19권4호
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• pp.317-322
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• 2017

When the heat flux on the heating surface following changing heat condition in the boiling heat transfer system exceeds critical heat flux, the critical heat flux phenomenon is going over to immediately the film boiling area and then it is occurred the physical destruction phenomenon of various heat transfer systems. In order to maximize the safe operation and performance of the heat transfer system, it is essential to improve the CHF(Critical Heat Flux) of the system. Therefore, we have analysis the effect of improving CHF and characteristics of heat transfer following the nanoparticle coating thickness. As the results, copper nanocoating time are increased to CHF, and in case of nano-coatings are increased spray-deposited coating times more than in the fure water; copper nanopowder is increased up to 6.40%. The boiling heat transfer coefficients of the pure water are increased up to 5.79% respectively. Also, the contact angle is decreased and surface roughness is increased when nano-coating time is increasingly going up.

• 한국재료학회지
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• 제31권6호
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• pp.331-338
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• 2021

Ti-Al-Si target and Cr-Si target are sputtered alternately to develop a multi-layered nitride coating on a steel mold to improve die-casting lifetime. Prior to the multi-layer deposition, a CrN layer is developed as a buffer layer on the mold to suppress the diffusion of reactive elements and enhance the cohesive strength of the multi-layer deposition. Approximately 50 nm CrSiN and TiAlSiN layers are deposited layer by layer, and form about three ㎛-thickness of multi-layered coating. From the observation of the uncoated and coated steel molds after the acceleration experiment of liquid metal injection casting, the uncoated mold is severely eroded by the adhesion of molten metallic glass. On the other hand, the multi-layer coating on the mold prevents element diffusion from the metallic glass and mold erosion during the experiment. The multi-layer structure of the coating transforms the nano-composite structured coating during the acceleration test. Since the nano-composite structure disrupts element diffusion to molten metallic glass, despite microstructure changes, the coating is not eroded by the 1,050 ℃ molten metallic glass.

• 센서학회지
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• 제32권6호
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.

• Journal of Magnetics
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• 제11권2호
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• pp.90-94
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• 2006

A finite-element method is used to analyze loss generation and electromagnetic noise absorption characteristics of a coplanar waveguide transmission line integrated with a magnetic thin film. Parameters used in the analysis are the electrical resistivity of the magnetic layer and the thickness of both magnetic and insulating layers. The results indicate that L-C resonance is the main loss mechanism of the electromagnetic noise absorption.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.419-422
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• 2010

This paper reports a simple and versatile technique for generating highly controllable sinusoidal nanostructures on the surface of poly-(dimethylsiloxane) (PDMS). The sinusoidal features were generated by oxidizing PDMS slabs with oxygen plasma, then stretching them by wrapping around a cylinderical surface, and finally allowing them to relax. The wavelength and amplitude could be finely controlled by varying the fabrication conditions such as duration of oxidation, diameter of the glass cylinder, duration of stretching, thickness of the PDMS slabs, and temperature during the second hardening process. The varied trends of the buckling patterns were characterized by using an atomic force microscope.