• Steel and Composite Structures
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• v.36 no.6
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• pp.643-656
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• 2020

This article presents a comprehensive static analysis of simply supported cross-ply carbon nanotubes reinforced composite (CNTRC) laminated nanobeams under various loading profiles. The nonlocal strain gradient constitutive relation is exploited to present the size-dependence of nano-scale. New higher shear deformation beam theory with hyperbolic function is proposed to satisfy the zero-shear effect at boundaries and parabolic variation through the thickness. Carbon nanotubes (CNTs), as the reinforced elements, are distributed through the beam thickness with different distribution functions, which are, uniform distribution (UD-CNTRC), V- distribution (FG-V CNTRC), O- distribution (FG-O CNTRC) and X- distribution (FG-X CNTRC). The equilibrium equations are derived, and Fourier series function are used to solve the obtained differential equation and get the response of nanobeam under uniform, linear or sinusoidal mechanical loadings. Numerical results are obtained to present influences of CNTs reinforcement patterns, composite laminate structure, nonlocal parameter, length scale parameter, geometric parameters on center deflection ad stresses of CNTRC laminated nanobeams. The proposed model is effective in analysis and design of composite structure ranging from macro-scale to nano-scale.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.417-421
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• 2016

We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the $TiO_2$ layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.221-227
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• 2015

The polarization characteristics of nano-scale grating-assisted polarization-insensitive coupler (GA-PIC) consisted of double sandwiched rib-type layers are evaluated in detail by using modal transmission-line theory (MTLT) based on equivalent network. To obtain the polarization-insensitive condition of GA-PIC, the coupling lengths as a function of the refractive index and thickness of sandwiched rib-type layer as well as the grating thickness and period are analyzed for quasi-TE and quasi-TM modes. The numerical results show that the GA-PIC with hundreds of nanometer scale is realized by properly choosing structural and material parameters of double sandwiched layers and grating.

• Steel and Composite Structures
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• v.22 no.4
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• pp.889-913
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• 2016

Vibration analysis of embedded functionally graded (FG)-carbon nanotubes (CNT)-reinforced piezoelectric cylindrical shell subjected to uniform and non-uniform temperature distributions are presented. The structure is subjected to an applied voltage in thickness direction which operates in control of vibration behavior of system. The CNT reinforcement is either uniformly distributed or functionally graded (FG) along the thickness direction indicated with FGV, FGO and FGX. Effective properties of nano-composite structure are estimated through Mixture low. The surrounding elastic foundation is simulated with spring and shear constants. The material properties of shell and elastic medium constants are assumed temperature-dependent. The motion equations are derived using Hamilton's principle applying first order shear deformation theory (FSDT). Based on differential cubature (DC) method, the frequency of nano-composite structure is obtained for different boundary conditions. A detailed parametric study is conducted to elucidate the influences of external applied voltage, elastic medium type, temperature distribution type, boundary conditions, volume percent and distribution type of CNT are shown on the frequency of system. In addition, the mode shapes of shell for the first and second modes are presented for different boundary conditions. Numerical results indicate that applying negative voltage yields to higher frequency. In addition, FGX distribution of CNT is better than other considered cases.

• Journal of Korea Foundry Society
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• v.28 no.6
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• pp.268-272
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• 2008

Interfacial characteristics of aluminum borate whisker reinforced AS52 matrix composite was investigated. Peak hardness of AS52 composite was obtained aging at $170^{\circ}C$ for 15h and the aging process was accelerated by the presence of the aluminium borate whisker. The MgO layer, which was the interfacial reaction product between the reinforcement and the Mg matrix, was produced with 20 nm thickness in as-cast condition. As the aging time increased, the thickness of the interfacial reaction layer increased to 50 nm in peak aged condition. The nano-indentation test results indicated that the strength of interface was improved by the aging but over-aging degraded the reinforcement and decreased the interfacial strength which resulted in the decrease of overall composite strength.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.160-165
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• 2016

To increase the capacitance of an Al electrolytic capacitor, the anodic oxide film, $Al_2O_3$, was partly replaced by an $Al_2O_3-ZrO_2$ (Al-Zr) composite film prepared by the vacuum infiltration method and anodization. The microstructure and composition of the prepared samples were investigated by scanning electron microscopy and transmission electron microscopy. The coated and anodized samples showed multi-layer structures, which consisted of an inner Al hydrate layer, a middle Al-Zr composite layer, and an outer $Al_2O_3$ layer. The thickness of the coating layer could go up to 220 nm when the etched Al foil was coated 8 times. The electrical properties of the samples, such as specific capacitance, leakage current, and withstanding voltages, were also characterized after anodization at 100 V and 600 V. The capacitances of samples with $ZrO_2$ coating were 36.3% and 27.5% higher than those of samples without $ZrO_2$ coating when anodized at 100 V and 600 V, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1587-1588
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• 2006

Tn this paper, PCB (Printed Circuit Board) embedded $BaTiO_3$ MIM capacitors were designed, fabricated, and characterized for low cost organic SOP applications by using 3-D EM simulator and low temperature processes. Size of electrodes and thickness of high dielectric films are optimized for improving the performance characteristics of the proposed embedded MIM capacitors at high frequency regime. The selected thicknesses of the $BaTiO_3$ film are $12{\mu}m$, $16{\mu}m$, and $20{\mu}m$. The fabricated MIM capacitor with dielectric constant of 30 and thickness of $12{\mu}m$ has capacitance density of $21.5p\;F/mm^2$ at 100MHz, maximum quality factor of 37.4 at 300 MHz, a quality factor of 30.9 at 1GHz, self resonant frequency of 5.4 GHz, respectively. The measured capacitances and quality factors are well matched with 3-D EM simulated ones. These embedded capacitors are promising for SOP based advanced electronic systems with various functionality, low cost, small size and volume.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.