• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.65-70
• /
• 2023

Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.

• Resources Recycling
• /
• v.12 no.6
• /
• pp.38-46
• /
• 2003

In this study, nano-sized Ni-ferrite and $Fe_2$$O_3$＋NiO powder was fabricated by spray pyrolysis process in the condition of 1kg/$\textrm{cm}^2$ air pressure using the Fe-Ni complex waste acid solution generated during the manufacturing process of shadow mask. The average particle size of the produced powder was below 100 nm. The effects of the reaction temperature, the concentration of raw material solution and the nozzle tip size on the properties of powder were studied. As the reaction temperature increased from $800 ^{\circ}C$ to $1100^{\circ}C$, the average particle size of the powder increased from 40 nm to 100 nm, the structure of the powder gradually became solid, yet the distribution of the particle size appeared more irregular. Along with the increase of the reaction temperature, the fraction of the Ni-ferrite phase were also on the rise, and the surface area of the powder was greatly reduced. As the concentration of Fe in solution increased from 20g/l to 200g/l, the average particle size of the powder gradually increased from 30 nm to 60 nm, while the distribution of the particle size appeared more irregular. Along with the increase of the concentration of solution, tie fraction of the Ni-ferrite phase was on the rise, and the surface area of the powder was greatly reduced. Along with the increase of the nozzle tip size, the distribution of the particle size appeared more irregular, yet the average particle size of the powder showed no significant change. As the nozzle tip size increased from 1 mm to 2 mm, the fraction of the Ni-ferrite phase showed no significant change, while the surface area of the powder slightly reduced. As the nozzle tip size increased to 3 mm and 5 mm, the fraction of the Ni-ferrite phase gradually reduced, and the surface area of the powder slightly increased.

• The KIPS Transactions:PartD
• /
• v.12D no.6 s.102
• /
• pp.921-930
• /
• 2005

In this paper, a general purpose molecular simulation system which has been developed by the author, are described. One of the most advantageous features is that the molecular simulation system can handle a coarse-grained model as well as an all-atom mode. Therefore, we can simulate mesoscopic phenomena as well as microscopic phenomena with the help of Langevin dynamics simulation and dissipative particle dynamics simulation techniques. Thus we could study anesthesia, protein folding, biopolymer flow in microchannel with single framework, which spans from microscopic to mesoscopic scales. We expect that we can also simulate many other bio/nano systems of technological importance which are not feasible by means of molecular dynamics simulation technique. Finally, performance data are shown and a bottleneck is identified for future optimization.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.411-411
• /
• 2012

Over the recent years, surface enhanced Raman spectroscopy (SERS) has dramatically grown as a label-free detecting technique with the high level of selectivity and sensitivity. Conventional SERS-active nanostructured layers have been deposited or patterned on rigid substrates such as silicon wafers and glass slides. Such devices fabricated on a flexible platform may offer additional functionalities and potential applications. For example, flexible SERS-active substrates can be integrated into microfluidic diagnostic devices with round-shaped micro-channel, which has large surface area compared to the area of flat SERS-active substrates so that we may anticipate high sensitivity in a conformable device form. We demonstrate fabrication of flexible SERS-active nanostructured substrates based on soft-lithography for simple, low-cost processing. The SERS-active nanostructured substrates are fabricated using conventional Si fabrication process and inkjet printing methods. A Si mold is patterned by photolithography with an average height of 700 nm and an average pitch of 200 nm. Polydimethylsiloxane (PDMS), a mixture of Sylgard 184 elastomer and curing agnet (wt/wt = 10:1), is poured onto the mold that is coated with trichlorosilane for separating the PDMS easily from the mold. Then, the nano-pattern is transferred to the thin PDMS substrates. The soft lithographic methods enable the SERS-active nanostructured substrates to be repeatedly replicated. Silver layer is physically deposited on the PDMS. Then, gold nanoparticle (AuNP) inks are applied on the nanostructured PDMS using inkjet printer (Dimatix DMP 2831) to deposit AuNPs on the substrates. The characteristics of SERS-active substrates are measured; topology is provided by atomic force microscope (AFM, Park Systems XE-100) and Raman spectra are collected by Raman spectroscopy (Horiba LabRAM ARAMIS Spectrometer). We anticipate that the results may open up various possibilities of applying flexible platform to highly sensitive Raman detection.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.11
• /
• pp.2493-2499
• /
• 2011

With growth of nano-bio industry, it is of significant importance to develop an automated system to exploit cell behaviors, including migration, mitosis, apoptosis, shape deformation of individual cells and their interactions among cells in the process of cell growth. In this paper, we proposed preprocessing techniques, a classification method which classifies clusters (overlapping multiple cells) from cells and an automated method which counts the number of cells and clusters in order to analyze 2D or 3D deformations of the cells in the real-time images from microscope in the cell culture. We conducted the 3T3 cell images taken from each thirty-minute interval. It showed the average 99.8% accuracy automatically for separating cells and clusters.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.12
• /
• pp.1267-1271
• /
• 2012

Demand for optical glass device used for lighting could increase rapidly because of LED lighting market growth. The optical glass devices that have been formed by hot press molding process the desired optical performance without being subjected to mechanical processing such as curve generation or grinding. EL-Max material has been used for many engineering applications because of their high wear resistance, high compressive strength, corrosion resistant and very good dimensional stability. EL-Max is very useful for a glass lens mold especially at high temperature and pressure. The performance and reliability of optical components are strongly influenced by the surface damage of EL-Max during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified EL-Max glass lens mold. To get the required qualified surface of EL-Max, the selection of type of the diamond wheel is also important. In this paper, we report best grinding conditions of ultra-precision grinding machining. The grinding machining results of the form accuracy and surface roughness have been analyzed by using Form Talysurf and NanoScan.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.371-374
• /
• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.8
• /
• pp.172-177
• /
• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.21-21
• /
• 2009

후막 광식각 기술을 이용하여 형성된 Ag 전극과 LTCC 기판 사이의 접착력을 향상시키기 위하여 무기 바인더로서 anorthite, diopside 및 MLS-62 glass frit을 첨가하여 감광성 Ag paste를 제조하였다. 소성 후의 glass pool effect를 감소시키기 위해 attrition mill을 통하여 미세 glass 분말을 준비하였다. Glass frit은 Ag powder의 5vol%~25vol%의 함량으로 첨가하여 감광성 Ag paste를 제조하였고 패턴 형성 후 $850^{\circ}C$에서 1시간 소결하였다. 전극과 기판 사이의 접착력은 micro-ball shear test 법으로 측정하였으며, Ag 전극 부착력은 glass frit의 함량 증가에 따라 증가하다가 감소하는 경향을 보이는데, 이는 과량의 glass frit 첨가로 인한 전극 내부에 액상 풀의 형성에 기인한 것으로 보여진다. Ag 전극의 면저항은 glass frit의 함량이 증가함에 따라 $0.13m{\Omega}{/\square}$에서 $2.06m{\Omega}{/\square}$까지 증가하는 경향을 나타내었다. 소성 전후의 전극 패턴의-수축율은 $100{\mu}m$의 선폭을 기준으로 glass frit의 첨가랑이 증가할수록 43.3%에서 35.0%로 감소하였으며, 그 결과 최소 선폭 $25{\mu}m$의 미세 전극 패턴의 형성이 가능하였다.

• Journal of the Korean Ceramic Society
• /
• v.45 no.8
• /
• pp.477-481
• /
• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.