• Title/Summary/Keyword: Nano-material

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A Study on Nano Technology Application of Pantograph Contact Strip for Electric Railway (전기철도 팬터그래프 집전판의 나노 기술 적용에 관한 연구)

  • Oh, Seok-Yong;Park, Young;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.261-261
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    • 2010
  • In electric railways, high speed trains are normally supplied by AC 25kV power by contact between a pantograph contact strip and a contact wire. Advanced railway operating countries are actively researching various areas for the development of contact strips due to the reason that the properties of contact strips are one of the key factors of electric railways. This paper applied nano technology which is rapidly growing in many areas to the contact strip of a pantograph for current collection performance improvement considering speed up of electric railways. In detail, this paper proposes a method to dope nano particles of metal to a Korea Train eXpress(KTX) carbon pantograph and its measurement results. It is expected that the contents of this paper be used for preliminary study of high-speed railway current collection technologies.

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Mechanical Properties for Micro-and-Nano- Mixture Composites Based Epoxy Resins (에폭시기반 마이크로 그러고 나노입자가 혼합된 콤포지트의 기계적특성)

  • Kwon, Sun-Suk;Choi, Bo-Sung;Baek, Kwan-Hyun;Lee, Chang-Hoon;Park, Jae-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.84-84
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    • 2010
  • Nano particles (10nm SiO2) were silane-treated in order to modify the surface characteristics in a epoxy nanocomposite. Then. micro particles ($3{\mu}m$ SiO2) were poured into the epoxy nanocomposite using various mixing process and epoxy/ micro-and-nano- mixed composites (EMNC) were prepared. The thermal (Tg) and mechanical (tensile and flexural strength) properties were measured by DMA and UTM and the data was estimated by Weibull plot.

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Sheet 제조를 위한 Nano YSZ 분산공정연구

  • Gu, Sin-Il;Sin, Hyo-Sun;Yeo, Dong-Hun;Kim, Jong-Hui;Nam, San
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.168-168
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    • 2008
  • 고체산화물 연료전지의 전해질로 사용되는 상용의 YSZ powder는 나노 크기의 입자로서 습식 후막 성형을 위한 분산공정에 많은 문제를 가지고 있다. 기존 tape casting을 이용한 후막 공정의 경우 수 micron 대역의 powder가 주로 사용되었고 MLCC 공정에서 sub micron 크기의 입자가 상용으로 적용되는 수준에 있다. 그러므로 아직 후막 공정이 확립되지 않은 YSZ의 경우 수십 nano 크기 powder의 분산과 casting에 관한 연구 결과 보고는 아직 미흡하다. 본 연구에서는 이러한 연구 필요성에 따라 수십 nano의 입자크기를 나타내는 YSZ 입자의 고농도 분산 조건을 위한 분산제와 용매 량에 대한 기본적인 실험 결과를 제시하고자 하였다. 그리고 이 결과에 기초하여 기존 tape casting 공정에서 사용되는 유기 binder system을 이용하여 후막의 casting 조건 및 sheet의 균일성 확보 조건을 확인 하고자 하였다.

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Preparation of Fullerene/Polystyrene Microparticles by Emulsion Polymerizations (에멀젼 중합에 의한 풀러렌/폴리스티렌 마이크로입자 제조)

  • Kim, Kun-Ji;Lee, Seung-Hee;Lee, Myong-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.400-401
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    • 2008
  • 전기영동형 전자종이 디스플레이의 새로운 소재로써 $C_{60}$(fullerene)와 같은 나노 입자를 포함하는 새로운 전기영동 입자를 제조하였다. 본 연구에서는 안정제로 poly(vinyl pyrrolidone)(PVP)를 사용하여 fullerene을 포함하는 styrene emulsion을 안정화 한 후 라디칼 중합을 통해 fullerene이 포함된 polystyrene microemulsion particles을 제조 합으로써 입자의 분산안정성을 높이고 전기영동에 따른 입자의 움직임을 최적화하도록 하였다. 이 실험에서는 fullerene의 양에 따라 제조된 입자의 크기와 입자 분포를 관찰하였다. 입자의 크기와 입자 분포는 주사형 전자현미경 (SEM) 을 이용하여 확인하였다. 또한 fullerene-PS 입자의 구조 분석과 특성평가를 위해서 FT-IR를 측정하였고, 입자의 열적 성질을 위해 TGA를 측정하였다.

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Free vibration of deep curved FG nano-beam based on modified couple stress theory

  • Rahmani, O.;Hosseini, S.A.H.;Ghoytasi, I.;Golmohammadi, H.
    • Steel and Composite Structures
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    • v.26 no.5
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    • pp.607-620
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    • 2018
  • Vibration analysis of deep curved FG nano-beam has been carried out based on modified couple stress theory. Material properties of curved Timoshenko beam are assumed to be functionally graded in radial direction. Governing equations of motion and related boundary conditions have been obtained via Hamilton's principle. In a parametric study, influence of length scale parameter, aspect ratio, gradient index, opening angle, mode number and interactive influences of these parameters on natural frequency of the beam, have been investigated. It was found that, considering geometrical deepness term leads to an increase in sensitivity of natural frequency about variation of aforementioned parameters.

Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai;Lee Won-Jae;Yoon Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.712-716
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    • 2006
  • NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

Impact of DPN on Deep Nano-technology Device Employing Dual Poly Gate (Nano-technology에 도입된 Dual Poly Gate에서의 DPN 공정 연구)

  • Kim, Chang-Jib;Roh, Yong-Han
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.296-299
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    • 2008
  • The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

Electrical Properties of Epoxy Nano-composites (나노복합재료를 이용한 에폭시의 전기적 특성)

  • Kil, Yun-Seob;Kim, Jung-Dong;An, Jae-Dong;Lee, Kang-Won;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.273-274
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    • 2008
  • For the purpose of practical use of epoxy composite materials, it has been widely known that adding filler is an indispensable condition for cost-effectiveness and reinforcement of mechanical strength. However, dielectric strength of insulators made of epoxy composites rapidly decreases due to interfaces between the epoxy resin and filler particles. In this paper, it is investigated that the electrical properties of epoxy resins as the function of nano-$SiO_2$ content. We obtained that breakdown voltage of 0.4[wt%] specimens is higher than the other $SiO_2$ content.

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Physical Properties of Green Sheets According to Glass Transition Temperature of Binder (바인더 유리전이온도에 따른 그린시트의 물리적 특성)

  • Kwon, Hyeok-Jung;Yeo, Dong-Hun;Shin, Hyo-Soon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.33-37
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    • 2013
  • The properties of LTCC green sheets formed by the MLS-22 powder of NEG Inc. were investigated for acrylic binders with different PVB and Tg in the variation of temperature. The elongation of the green sheets showed large variation depending on the temperature, and was rapidly decreased near the Tg of the sheets. With the increase of the ratio of plasticizer/binder (P/B), large elongation of the sheets was observed due to the decrease of the Tg. In the stacking process of the multilayer ceramic, the optimal control of the temperature is highly required depending on the Tg of the binder and the ratio of P/Buniform coating.

The Structural-Dependent Characteristics of Rashba Spin Transports in In0.5Ga0.5As/In0.5Al0.5As Heterojunctions

  • Choi, Hyon-Kwang;Hwang, Sook-Hyun;Jeon, Min-Hyon;Yamda, Syoji
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.140-143
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    • 2011
  • The growth and characterization of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface $In_{0.5}Ga_{0.5}As$ channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm $In_{0.5}Ga_{0.5}As$ cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.