• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.543-546
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• 2011

We studied sintering temperature to enhance the piezoelectric properties of $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$+0.01wt%ZnO (hereafter NKN-LST+ZnO) lead free piezoelectric ceramics. The synthesis and sintering method were the conventional solid state reaction method and sintering was executed at $1,080\sim1,120^{\circ}C$. We found that NKN-LST+ZnO ceramics at optimal sintering temperature showed the improved piezoelectric properties at the optimal sintering temperature. The NKN-LST+ZnO ceramics show good performance with piezoelectric constant $d_{33}$= 153 pC/N sintered at $1,090^{\circ}C$. The results reveal that NKN-LST+ZnO ceramics are promising candidate materials for lead-free piezoelectric application.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.121-124
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• 2013

The incorporation of 90 nm alumina particles into an epoxy matrix to form a composite microstructure is described in present study. It is shown that the use of ultrafine particles results in a substantial change in the behavior of the composite, which can be traced to the mitigation of internal charges when a comparison is made with conventional $Al_2O_3$ fillers. A variety of diagnostic techniques have been used to augment pulsed electro-acoustic space charge measurement to provide a basis for understanding the underlying physics of the phenomenon. It would appear that, when the size of the inclusions becomes small enough, they act cooperatively with the host structure and cease to exhibit interfacial properties. It is postulated that the $Al_2O_3$ particles are surrounded by high charge concentrations. Since $Al_2O_3$ particles have very high specific areas, these regions allow limited charge percolation through $Al_2O_3$ filled dielectrics. The practical consequences of this have also been explored in terms of the electric strength exhibited. It would appear that there was a window in which real advantages accumulated from the nano-formulated material. An optimum filler loading of about 0.5 wt.% was indicated.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• 한국가스학회지
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• 제15권3호
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• pp.67-73
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• 2011

미래 수소경제시대에 가장 효과적이고 안전한 수소공급방안으로 배관이 적용될 것으로 예측되는데, 우선 첫 단계에서는 기존 가스배관의 수소공급배관 적용 가능성을 평가하는 것이 필요하다. 또한 국내 천연가스배관에 수소가 일부 포함된 대체천연가스가 주입되는 기존 가스배관의 건전성에 미치는 영향을 파악해야만 한다. 수소가 포함된 천연가스를 공급하는 배관에서는 수소취성, 피로파괴, 수소누설 등에 대한 검토가 이루어져야 한다. 본 논문에서는 고압천연가스배관 건전성에 미치는 수소의 영향 평가 작업의 하나로서. 배관재료의 기계적 특성 변화에 미치는 수소의 영향을 거시적으로 평가하기 위하여 인장시험을 수행하여. 수소 주입 전 후의 항복강도 및 인장강도의 변화를 측정하였고, 연성, 가공경화 지수, 항복비의 변화를 알아보았다.

• 열처리공학회지
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• 제20권5호
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• pp.237-242
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• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.502-505
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• 2005

Researches about micro technology travel lively in these days. Such many researches are concentrated in the field of materials and a process field. But properties of micro materials should be known to give results of research developed into still more. In these various material properties, mechanical property such as tensile strength, elastic modulus, etc is the basic property. To measure mechanical properties in micro or nano scale, actuating must be very precise. PZT is a famous actuator which becomes a lot of use to measure very precise mechanical properties in micro research field. But PZT has a nonlinearity which is called as hysteresis. Not precision result is caused because of this hysteresis property in PZT actuator. Therefore feedback control method is used in many researches to prevent this hysteresis of PZT actuator. Feedback control method produce a good result in processing view, but cause a loss in a resolution view. In this paper, hysteresis is compensated by open loop control method. Hysteresis property is modeled in Mathematical function and compensated control input is constructed using inverse function of original data. Reliability of this control method can be confirmed by testing nickel thin film that is used in MEMS material broadly.

• 대한화학회지
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• 제54권3호
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• pp.310-316
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• 2010

항균성을 포함한 나노 입자는 높은 활용성으로 인해 다양한 분야에 적용되고 있다. 본 연구는 HEMA (2-hydroxyethylmethacrylate), NVP (N-vinyl pyrrolidone), MMA (methylmethacrylate)에 나노 은 및 백금을 첨가한 후 농도조건을 다양화 하여 $70^{\circ}C$에서 약 40분, $80^{\circ}C$에서 약 40분 마지막으로 $100^{\circ}C$에서 약 40분 동안의 열처리 공정을 거쳐 공중합 하였다. 사용된 나노 은과 백금 입자의 크기는 각각 10 ~ 20 nm를 나타내었다. 중합 후 생성된 고분자를 사용하여 물리적 특성을 측정한 결과, 함수율 34.29 ~ 39.00%, 굴절률 1.422 ~ 1.430을 나타내었으며, 가시광선 투과율 78.8 ~ 92.5% 그리고 인장강도 값은 0.149 ~ 0.179 Kgf을 나타내었다. 나노 은과 백금 입자를 사용한 안 의료용 렌즈 재료는 콘택트렌즈 적용에 요구되는 기본적인 물성을 만족하였다.

• 한국세라믹학회지
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• 제52권6호
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• pp.497-501
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• 2015

Inkjet printing is a widespread technology, offering advantages such as high-quality decoration, a continuous process, and the accurate direct reproduction of patterns or pictures. In inkjet printing technology, the dispersion stability of ceramic ink is one of the most important factors. In this study, the dispersion stability of blue $CoAl_2O_4$ ink for ceramic inkjet printing is systematically investigated. Blue $CoAl_2O_4$ pigment was synthesized by a solid-state reaction and then milled to less than 300nm in size. In order to investigate the influence of the viscosity on the dispersion stability, two types of $CoAl_2O_4$ ceramic inks (termed here Blue L and Blue H) were prepared using different volume ratios of ethylene glycol and ethanol. The Blue L and Blue H ink solutions contained cetyltrimethylammonium bromide(CTAB) as a dispersive agent. The viscosity, surface tension and jetting stability of the $CoAl_2O_4$ ceramic inks were analyzed using a rheometer, a surface tension meter and a dropwatcher. The dispersion stability of the $CoAl_2O_4$ ceramic ink was investigated by a multiple light-scattering method. Blue H, a ceramic ink with higher viscosity, showed much better dispersion stability than the Blue L ceramic ink.