• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• 한국정보전자통신기술학회논문지
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• 제9권2호
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• pp.155-161
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• 2016

본 논문은 광 도움 전기화학적 식각으로 나노갭 트렌치 구조를 형성하고 이를 이용해서 정전 용량형 가속도 센서를 설계하고 제작한 것에 대한 연구이다. 정전 용량형 가속도 센서의 감도를 증가시키기 위해 스프링에 연결된 관성질량과 연결된 전극과 감지전극 사이의 간격을 좁혀 커패시턴스의 변화량을 증가시키고 있다. 이를 실현시키기 위해 광-도움 전기화학적 식각을 이용하였고 ANSYS 프로그램을 이용하여 구조해석을 실시하여 $1mm{\times}mm$ 크기의 초소형 정전 용량형 가속도 센서를 설계하였다. 광-도움 전기화학적 식각의 실험 변수인 빛의 세기, dc 전압, 용액의 조성, 피치 등을 고려하여 가속도 센서는 제작 되었다. 최적 공정 조건은 dc전압 2V, Blue LED 20mA, 49wt%HF:DMF:D.I.Water=1:20:10, 피치 $20{\mu}m$이며, 폭 344nm, 깊이 $11.627{\mu}m$의 나노갭 트렌치가 형성되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.

• 한국재료학회지
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• 제26권9호
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.465-466
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• 2006

A single-wall carbon nanotube (SWCNT) has been studied as a material of Nano-Eletro-Mechanical-System (NEMS) device together with various nanowires. In order for oscillation of a multi-wall carbon nanotube (MWCNT) or a single-walled carbon nanotube (SWCNT) on plane surface, it needs suspension of a CNT across trench electrodes. So we propose fabrication method of a MWCNT resonator using dielectrophoresis and show successful results of suspeneded MWNT. Thin electrodes with large gaps could not suspend small diameter MWNT but thicker electrodes could. Thin MWNT could be suspended only when the electrode gap was reduced.