Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2005.11a
- /
- Pages.833-836
- /
- 2005
Nano-gap Trench Etching using Forward Biased PN Junction for High Performance MEMS Devices
고성능 MEMS 소자를 위한 순방향 전극이 걸린 PN 접합을 이용한 나노 간격 홈의 식각
- Jeong, Jin-Woo (School of Electrical Engineering and Computer Science, Seoul National University) ;
- Kim, Hyeon-Cheol (School of Electrical Engineering and Computer Science, Seoul National University) ;
- Chun, Kuk-Jin (School of Electrical Engineering and Computer Science, Seoul National University)
- Published : 2005.11.26
Abstract
Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of
Keywords