• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.363-364
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.589-590
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• 2011

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Advances in nano research
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• v.3 no.1
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• pp.13-27
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• 2015

Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.307-307
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• 2008

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.788-791
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• 2004

We have studied the fabrication of silver micro lines using the silver nano sol on ITO substrate by an ink-jet method. The average particles size of $10wt\%$ silver nano sol synthesized with polyelectrolytes was smaller than 10 nm. The pattern formation of silver nano sol on the substrate closely related with the contact angle of the silver nano sol. The dot shaped of silver nano sol on bare ITO substrate was formed due to the high contact angle of silver nano sol. When ITO substrates was treated with 100 ppm polyethylenimine for silver nano sol patterning, fine silver micro lines of $60{\sim}100{\mu}m$ width was fabricated by ink-jet method.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.197-197
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• 2016

Quantum dot nanocrystals(QDs) have been emerged as next generation materials in the field of energy harvesting, sensor, and light emitting because of their compatibility with solution process and controllable energy band gap. Especially, characteristics of color tuning and color purity make it possible for QDs to be used photoluminescence materials. Photoluminescence devices with QDs have been researched for a long time. Photoluminescence quantum yield(PL QY) is important factor that defines the performance of Photoluminescence devices. One of the ways to achieve better PL QY is ligand modification. If ligands are changed to proper electron donating group, electrons can be confined in the core which results in enhancement of PL QY. Because of the reason, short ligands are preferred for enhancing PL QY. Thiophenol-based ligands are shorter than typical alkyl chain ligands. In this study, the effect of thiophenol-based ligands with different functional groups are investigated. Four different types of thiophenol-based organic materials are used as organic capping ligand. QDs with bare thiophenol and fluorothiophenol show better quantum yield compared to oleic acid.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.137-141
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• 2005

Quantum dot(QD) 메모리용 silicon nano-particle을 corona 방전방법에 의해 상온에서 대량 발생하는 방법을 개발하였다. Silicon QD는 SiH4 가스를 코로나 방전 영역을 통과시켜 발생시켰으며, 코로나 전압은 2.75kV를 사용하였다. SiH4 몰농도 $0.33{\times}10^{-7}\;mol/l$ 일 경우 발생된 QD입자 크기는 약 10nm이며 기하학적 표준편차(geometric standard deviation)는 1.31이었다. 이 조건에서 nonvolatile quantum dot semiconductor memory (NVQDM)를 제작하였으며, 이렇게 제작된 NVQDM flat band voltage는 1.5 volt였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.117-117
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.922-925
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• 2003

The interest of self-organization materials that have uniform and regular structure in nano scale has been grown due to their utilization in various fields of nanotechnology. An attractive candidate among these materials is anodic aluminum oxide film, which are formed by anodization of aluminum in an appropriate acid solution. The anodic aluminum oxide film has a highly ordered porous structure with very uniform and nearly parallel pores that can be organized in an almost precise close-packed hexagonal structure. In this study, we attempt to make Au dot arrays, which were fabricated using anodic aluminum oxide film as an evaporation mask. The Au dot arrays have a uniform sized dots and spacing to its neighbors and the average diameter of Au dots is about 60 nm corresponding to them of the mask.