• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Journal of Advanced Navigation Technology
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• v.20 no.1
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• pp.65-71
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• 2016

Quantum-dot cellular automata (QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Typical BCD-EXCESS 3 code converters using QCA have not considered the scalability so that the architectures are not suitable for a large scale circuit design. Thus, we design a BCD-EXCESS 3 code converter with scalability using QCADesigner and verify the effectiveness by simulation. Our structure have reduced 32 gates and 7% of garbage space rate compare with typical URG BCD-EXCESS 3 code converter. Also, 1 clock is only needed for circuit expansion of our structure though typical QCA BCD-EXCESS 3 code converter demands 7 clocks.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.449-454
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• 2014

The purpose of this study is(was) to investigate the shielding ratio of 1 mmPb and the off axis ratio outside the field edge at depth of 1 cm from a phantom surface for 6 MV photon beam. A dose of 180 cGy was delivered to a depth of 10 cm for a $10{\times}10cm^2$ and $15{\times}15cm^2$ field in the SAD technique. The off axis ratio was calculated by measuring the dose of optically stimulated luminescent nanoDot dosimeters(OSLnDs) positioned at 2, 4 and 6 cm from the field edge, and the center axis of field. And the shielding ratio of 1 mmPb was calculated by measuring the dose of OSLnDs positioned at 2, 4 and 6 cm from the field edge.. As a result, for a $10{\times}10cm^2$ and $15{\times}15cm^2$ field, the off axis ratios were acquired 0.008-0.023 and 0.011-0.028, respectively. Also the shielding ratios of 1 mmPb were acquired 0.868-0.888 and 0.807-0.842, respectively. These results provide data to protect organs at risk outside the radiation treatment field.

• Journal of the Korean Society of Radiology
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• v.16 no.7
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• pp.843-849
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• 2022

In this study, the probability of secondary carcinogenesis was analyzed by measuring the exposure dose of surrounding normal organs during radiosurgery using a gamma knife. A pediatric phantom (Model 706-G, CIRS, USA) composed of human tissue-equivalent material was set to four tumor volumes of 0.25 cm³, 0.51 cm³, 1.01 cm³, and 2.03 cm³, and the average dose was 18.4 ± 3.4 Gy. After installing the Rando phantom on the table of the gamma knife surgical equipment, the OSLD nanoDot dosimeters were placed in the right eye, left eye, thyroid, thymus gland, right lung, and left lung to measure each exposure dose. The probability of cancer occurrence due to radiation exposure of surrounding normal organs during gamma knife radiosurgery for acoustic schwannoma disease was 4.08 cancers per 100,000 at a tumor volume of 2.03 cm³. This study is expected to be used as useful data in relation to stochastic effects in the future by studying the risk of secondary radiation exposure that can occur during stereotactic radiosurgery.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.493-498
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• 2006

Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2016.11a
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• pp.197-198
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• 2016

최근 RGB LED 조명은 다양한 장점으로 이를 활용한 연구가 진행되고 있으며 단순 조명이 아닌 정보전달 및 공간연출의 디자인적 요소의 역할을 이행하기도 한다. RGB의 혼합으로 다양한 색상이 표현 가능한 LED를 사용하여 개별적으로 LED를 제어해 여러 가지 색상 및 모양이 표현 가능한 LED 도트 매트릭스를 제작하였으며, 이를 활용해 다양한 콘텐츠를 출력하고자 한다. 다양한 모양의 콘텐츠에선 개별적으로 LED를 제어하고, 그 외의 콘텐츠에선 원하는 LED를 그룹지어 제어한다. 본 논문에서 제작한 LED 도트 매트릭스는 많은 정보를 전달 할 수 있으며, 다양한 콘텐츠 제공으로 인한 상업화 및 효율성의 확대를 꾀할 수 있다.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.18.2-18.2
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.360-361
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• 2004

An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.