• Journal of Information Display
• /
• v.6 no.3
• /
• pp.6-11
• /
• 2005

In this paper, a general performance of the PSS-LCD or Polarization Shielded Smectic Liquid Crystal Display is discussed. This smectic base LCD does not use any spontaneous polarization, but uses induced polarization just sa me with current nematic base LCDs. Specific initial molecular alignment as well as specific cell design realizes ext remely fast optical response speed with native wide viewing angle. Moreover, this performance is provided by full compatible electronics for current conventional LCDs. A general performance of the PSS-LCD is introduced herein.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.710-713
• /
• 2008

LED Scanning Backlight Stereoscopic Display with Shutter Glasses is provided to realize stereoscopic image viewing even in a liquid crystal display. The eye shutter signal is alternately switched from the left eye to the right eye with 120Hz of LCD Vertical synchronization (V-sync).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.91-96
• /
• 2005

In this paper, a general performance of the PSS-LCD or Polarization Shielded Smectic Liquid Crystal Display is discussed. This smectic base LCD does not use any spontaneous polarization, but uses induced polarization just same with current nematic base LCDs. Specific initial molecular alignment as well as specific cell design realizes extremely fast optical response speed with native wide viewing angle. Moreover, this performance is provided by full compatible electronics for current conventional LCDs. A general performance of the PSS-LCD is introduced here.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.08a
• /
• pp.249-249
• /
• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.269-270
• /
• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.4
• /
• pp.145-150
• /
• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.302-308
• /
• 2013

In this study, we report the synthesis and characteristics of gallium oxide ($Ga_2O_3$) nanoparticles prepared by the polymerized complex method. $Ga_2O_3$ nanoparticles were synthesized using $Ga(NO_3)_3$, ethylene glycol, and citric acid as the starting materials at a low temperature of $500{\sim}800^{\circ}C$. The temperature of the weight reduction by the loss of organic precursor was revealed using TG-DTA analysis. The crystal structural change of $Ga_2O_3$ nanoparticles by the annealing process was investigated by XRD analysis. The morphologies and the size distributions of $Ga_2O_3$ nanoparticles were analyzed using SEM.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.1
• /
• pp.47-56
• /
• 2017

In this study, the higher temperature thermal property of the fly ash-blast furnace slag system Geopolymer including alumina aggregate was investigated whether that Geopolymer will be or not useful as thermal-resistant construction materials. Under every mixing conditions, the crack on the surface of hardened body was not observed up to $800^{\circ}C$ and it corresponded with fact that level of changes was not significant before and after heating process. Residual compressive strength is most high when mixing Blast-Furnace Slag ratio is 60 wt% until temperature reaches $800^{\circ}C$. The major hydrates of hardened body of Geopolymer; amorphous halo pattern between $20{\sim}35^{\circ}$ (2theta) and mullite ($3Al_2O_3{\cdot}2SiO_2$) and quartz ($SiO_2$) was found during the experiment. Amorphous halo pattern was a aluminosilicate gel generated by geopolymeric polycondensation and it was found that the halo pattern of aluminosilicate gel was preserved up to $800^{\circ}C$. The patterns of aluminosilicate gel disappeared from $1,000^{\circ}C$ and crystal phases like gehlenite, calcium silicate, calcium aluminum oxide, microcline was observed with the increase of exposure temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.3
• /
• pp.83-90
• /
• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Korean Journal of Mineralogy and Petrology
• /
• v.33 no.4
• /
• pp.463-475
• /
• 2020

Presence of microplastics in soil and groundwater has recently been reported and environmental concerns are raised as to the plastic pollution. In the subsurface environment, clay minerals and metal oxide minerals are commonly found as finely dispersed states. Because the minerals have high sorption capacities for diverse pollutants, interactions with mineral surface play an important role in the transport of microplastics in groundwater. Accordingly, environmental mineralogy investigating the interactions between microplastics and mineral surfaces is the essential research area to understand the fate and transport of microplastics in the subsurface environment. The microplastic-mineral surface research requires molecular- to nano-scale analyses to be able to probe the relatively weak interactions between them. The current report introduces a nano-scale analysis tool called quartz crystal microbalance (QCM) that can measure the sorbed/desorbed mass of nanoplastics on mineral surfaces at the level of a few nanograms (~10-9 g). This report briefly reviews the main principles in the QCM measurement and discusses applications of QCM to the environmental mineralogy research.